JP5344931B2 - 向上した電子遷移を有する材料を使用した光電子デバイス - Google Patents

向上した電子遷移を有する材料を使用した光電子デバイス Download PDF

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Publication number
JP5344931B2
JP5344931B2 JP2008556484A JP2008556484A JP5344931B2 JP 5344931 B2 JP5344931 B2 JP 5344931B2 JP 2008556484 A JP2008556484 A JP 2008556484A JP 2008556484 A JP2008556484 A JP 2008556484A JP 5344931 B2 JP5344931 B2 JP 5344931B2
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nanowires
optoelectronic device
band
state
interface
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Japanese (ja)
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JP2009528679A5 (enExample
JP2009528679A (ja
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マーシー アール． ブラック，
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Los Alamos National Security LLC
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Los Alamos National Security LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1437—Quantum wires or nanorods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber
    • Y10T428/298—Physical dimension

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Photovoltaic Devices (AREA)
  • Luminescent Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008556484A 2006-02-27 2007-02-27 向上した電子遷移を有する材料を使用した光電子デバイス Expired - Fee Related JP5344931B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77713106P 2006-02-27 2006-02-27
US60/777,131 2006-02-27
PCT/US2007/005361 WO2008063209A2 (en) 2006-02-27 2007-02-27 Optoelectronic devices utilizing materials having enhanced electronic transitions

Publications (3)

Publication Number Publication Date
JP2009528679A JP2009528679A (ja) 2009-08-06
JP2009528679A5 JP2009528679A5 (enExample) 2010-04-08
JP5344931B2 true JP5344931B2 (ja) 2013-11-20

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JP2008556484A Expired - Fee Related JP5344931B2 (ja) 2006-02-27 2007-02-27 向上した電子遷移を有する材料を使用した光電子デバイス

Country Status (9)

Country Link
US (2) US7893512B2 (enExample)
EP (1) EP1994565A4 (enExample)
JP (1) JP5344931B2 (enExample)
KR (1) KR101327723B1 (enExample)
CN (1) CN101405864B (enExample)
AU (1) AU2007322360B2 (enExample)
CA (1) CA2642299A1 (enExample)
IL (1) IL193349A0 (enExample)
WO (1) WO2008063209A2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7893512B2 (en) 2006-02-27 2011-02-22 Los Alamos National Security, Llc Optoelectronic devices utilizing materials having enhanced electronic transitions
TWI550646B (zh) * 2006-10-12 2016-09-21 坎畢歐科技公司 製造透明導體之方法
CN101842909A (zh) * 2007-07-19 2010-09-22 加利福尼亚技术学院 半导体的有序阵列结构
JP2010538464A (ja) 2007-08-28 2010-12-09 カリフォルニア インスティテュート オブ テクノロジー ポリマ埋め込み型半導体ロッドアレイ
EP2269227A1 (en) * 2008-04-03 2011-01-05 Bandgap Engineering, Inc. Designing the host of nano-structured optoelectronic devices to improve performance
WO2009137241A2 (en) 2008-04-14 2009-11-12 Bandgap Engineering, Inc. Process for fabricating nanowire arrays
US9000353B2 (en) * 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
WO2010042209A1 (en) * 2008-10-09 2010-04-15 Bandgap Engineering, Inc. Process for structuring silicon
PT2351100T (pt) 2008-11-14 2020-04-21 Bandgap Eng Inc Dispositivos nanoestruturados
WO2011066570A2 (en) * 2009-11-30 2011-06-03 California Institute Of Technology Semiconductor wire array structures, and solar cells and photodetectors based on such structures
WO2011156042A2 (en) 2010-03-23 2011-12-15 California Institute Of Technology Heterojunction wire array solar cells
US20120015247A1 (en) * 2010-07-14 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Silicon crystal body and power storage device using the silicon crystal body
US8945794B2 (en) 2010-11-12 2015-02-03 Faris Modawar Process for forming silver films on silicon
US9099583B2 (en) 2011-01-18 2015-08-04 Bandgap Engineering, Inc. Nanowire device with alumina passivation layer and methods of making same
WO2013043730A2 (en) 2011-09-19 2013-03-28 Bandgap Engineering, Inc. Electrical contacts to nanostructured areas
CN102436532A (zh) * 2011-11-28 2012-05-02 华北电力大学 InAs/GaSb超晶格电子结构的设计方法
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
US9545612B2 (en) 2012-01-13 2017-01-17 California Institute Of Technology Solar fuel generator
WO2013126432A1 (en) 2012-02-21 2013-08-29 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
WO2013152043A1 (en) 2012-04-02 2013-10-10 California Institute Of Technology Solar fuels generator
WO2013152132A1 (en) 2012-04-03 2013-10-10 The California Institute Of Technology Semiconductor structures for fuel generation
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
US9449855B2 (en) 2013-07-12 2016-09-20 Advanced Silicon Group, Inc. Double-etch nanowire process
CN106206269B (zh) * 2016-07-26 2019-09-17 山东大学 一种利用半导体极性场提高热电子注入效率的方法
US11087055B2 (en) * 2017-11-17 2021-08-10 Samsung Electronics Co., Ltd. Method of screening materials using forward conducting modes
CN110322938B (zh) * 2018-07-17 2021-06-15 中国科学院物理研究所 拓扑电子材料的判定和搜索方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0892446B1 (en) * 1993-11-02 2006-05-24 Matsushita Electric Industrial Co., Ltd. Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles
JPH07272651A (ja) * 1994-03-31 1995-10-20 Mitsubishi Electric Corp 針状結晶構造とその製造方法
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
TWI220319B (en) * 2002-03-11 2004-08-11 Solidlite Corp Nano-wire light emitting device
US20030189202A1 (en) * 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US7038890B2 (en) * 2003-07-29 2006-05-02 Hitachi Global Storage Technologies Netherlands B.V. Current perpendicular to the planes (CPP) sensor with a highly conductive cap structure
US20050196707A1 (en) 2004-03-02 2005-09-08 Eastman Kodak Company Patterned conductive coatings
KR100624419B1 (ko) * 2004-04-07 2006-09-19 삼성전자주식회사 나노와이어 발광소자 및 그 제조방법
US7307271B2 (en) * 2004-11-05 2007-12-11 Hewlett-Packard Development Company, L.P. Nanowire interconnection and nano-scale device applications
US20060207647A1 (en) * 2005-03-16 2006-09-21 General Electric Company High efficiency inorganic nanorod-enhanced photovoltaic devices
US7893512B2 (en) 2006-02-27 2011-02-22 Los Alamos National Security, Llc Optoelectronic devices utilizing materials having enhanced electronic transitions

Also Published As

Publication number Publication date
EP1994565A2 (en) 2008-11-26
KR101327723B1 (ko) 2013-11-11
KR20080113204A (ko) 2008-12-29
CN101405864B (zh) 2011-04-27
US20070278476A1 (en) 2007-12-06
WO2008063209A3 (en) 2008-08-14
CA2642299A1 (en) 2008-05-29
AU2007322360A1 (en) 2008-05-29
WO2008063209A2 (en) 2008-05-29
US7893512B2 (en) 2011-02-22
US20110278534A1 (en) 2011-11-17
US8415758B2 (en) 2013-04-09
AU2007322360B2 (en) 2013-03-28
CN101405864A (zh) 2009-04-08
EP1994565A4 (en) 2012-06-27
JP2009528679A (ja) 2009-08-06
IL193349A0 (en) 2009-05-04

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