CN100514774C - 具有InP衬底的光半导体装置 - Google Patents

具有InP衬底的光半导体装置 Download PDF

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Publication number
CN100514774C
CN100514774C CNB2006101089272A CN200610108927A CN100514774C CN 100514774 C CN100514774 C CN 100514774C CN B2006101089272 A CNB2006101089272 A CN B2006101089272A CN 200610108927 A CN200610108927 A CN 200610108927A CN 100514774 C CN100514774 C CN 100514774C
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CN
China
Prior art keywords
layer
type
semiconductor device
optical semiconductor
carrier concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2006101089272A
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English (en)
Chinese (zh)
Other versions
CN1929219A (zh
Inventor
岸野克巳
野村一郎
玉村好司
中村均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
School Corp
Hitachi Ltd
Sony Corp
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School Corp
Hitachi Ltd
Sony Corp
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Publication of CN1929219A publication Critical patent/CN1929219A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CNB2006101089272A 2005-09-05 2006-07-28 具有InP衬底的光半导体装置 Expired - Fee Related CN100514774C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005256566A JP4920221B2 (ja) 2005-09-05 2005-09-05 ＩｎＰ基板を有する光半導体装置
JP2005256566 2005-09-05

Publications (2)

Publication Number Publication Date
CN1929219A CN1929219A (zh) 2007-03-14
CN100514774C true CN100514774C (zh) 2009-07-15

Family

ID=37492262

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101089272A Expired - Fee Related CN100514774C (zh) 2005-09-05 2006-07-28 具有InP衬底的光半导体装置

Country Status (5)

Country Link
US (1) US7772586B2 (enExample)
EP (1) EP1760850B1 (enExample)
JP (1) JP4920221B2 (enExample)
KR (1) KR20070025989A (enExample)
CN (1) CN100514774C (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4996869B2 (ja) * 2006-03-20 2012-08-08 株式会社日立製作所 半導体レーザ
JP5028177B2 (ja) * 2007-07-25 2012-09-19 ソニー株式会社 半導体素子
JP2009059886A (ja) 2007-08-31 2009-03-19 Hitachi Ltd 半導体発光素子
JP2010045165A (ja) * 2008-08-12 2010-02-25 Sony Corp 半導体素子
EP2211431A1 (de) * 2009-01-22 2010-07-28 Universität Bremen Bragg-Spiegel mit Übergitter zur Kompensation einer Gitterfehlanpassung
DE112011101530B4 (de) 2010-04-30 2021-03-25 Trustees Of Boston University Verfahren zur Herstellung einer optischen Vorrichtung
CN101976691B (zh) * 2010-08-23 2012-11-21 北京工业大学 一种五结化合物半导体太阳能光伏电池芯片
GB2503606B (en) * 2011-04-06 2018-04-04 Int Crystal Laboratories Radiation detector
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
EP3050130A4 (en) * 2013-09-27 2017-03-01 Intel Corporation Forming led structures on silicon fins
JP6954562B2 (ja) * 2017-09-15 2021-10-27 セイコーエプソン株式会社 発光装置およびその製造方法、ならびにプロジェクター
CN109860360B (zh) * 2018-11-29 2020-08-18 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制备方法
KR102712563B1 (ko) 2019-11-18 2024-10-02 삼성디스플레이 주식회사 양자점, 이를 포함하는 조성물 또는 복합체, 패턴화된 막, 및 이를 포함하는 표시 소자
RU2756003C1 (ru) * 2020-11-13 2021-09-24 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395791A (en) * 1992-05-22 1995-03-07 Minnesota Mining And Manufacturing Company Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
CN1431722A (zh) * 2003-02-18 2003-07-23 华南师范大学 Ⅲ族氮化物半导体蓝色发光器件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
JPH03179790A (ja) * 1989-12-08 1991-08-05 Hitachi Ltd 半導体構造体および半導体レーザ装置
JPH07142765A (ja) * 1993-11-15 1995-06-02 Hitachi Ltd 半導体発光素子、半導体レーザ及び半導体発光素子の製造方法
JPH07202346A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体装置の製造方法および半導体装置
JPH07254755A (ja) * 1994-03-16 1995-10-03 Hitachi Ltd 半導体発光素子
JPH07326817A (ja) * 1994-06-01 1995-12-12 Fujitsu Ltd 半導体発光素子
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JPH09129981A (ja) * 1995-10-31 1997-05-16 Nec Corp 半導体発光素子
JP2803722B2 (ja) * 1996-05-10 1998-09-24 日本電気株式会社 半導体装置及びその製造方法
JP2930032B2 (ja) * 1996-09-26 1999-08-03 日本電気株式会社 Ｉｉ−ｖｉ族化合物半導体発光素子およびその製造方法
JPH10112565A (ja) * 1996-10-04 1998-04-28 Matsushita Electric Ind Co Ltd 半導体発光素子
US6178190B1 (en) * 1997-08-04 2001-01-23 Nec Corporation II-VI compound semiconductor light emitting device
US7358159B2 (en) * 2001-04-04 2008-04-15 Nippon Mining & Metals Co., Ltd. Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395791A (en) * 1992-05-22 1995-03-07 Minnesota Mining And Manufacturing Company Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
CN1431722A (zh) * 2003-02-18 2003-07-23 华南师范大学 Ⅲ族氮化物半导体蓝色发光器件

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
II-VI Semiconductors On InP for Green-Yellow Emitters. Katsumi Kishino, Member, Ichirou Nomura.IEEE Journal Of Selected Topics in Quantum Electronics,Vol.8 No.4. 2002
II-VI Semiconductors On InP for Green-Yellow Emitters. Katsumi Kishino, Member, Ichirou Nomura.IEEE Journal Of Selected Topics in Quantum Electronics,Vol.8 No.4. 2002 *
Proposal ofanovelBeZnSeTequaternaryforII-VImiddlerangevisiblelightemittingdevices. Yasushi Takashima, Ichirou Nomura, Yuki Nakai.Phys. Stat. Sol.(b),Vol.241 No.3. 2004
Proposal ofanovelBeZnSeTequaternaryforII-VImiddlerangevisiblelightemittingdevices. Yasushi Takashima, Ichirou Nomura,Yuki Nakai.Phys. Stat. Sol.(b),Vol.241 No.3. 2004 *
基于Be的宽带II-VI族半导体材料及激光二极管研究. 张吉英，申德振，范希武.光电子.激光，第10卷第6期. 1999

Also Published As

Publication number Publication date
EP1760850A2 (en) 2007-03-07
JP2007073606A (ja) 2007-03-22
US20070051937A1 (en) 2007-03-08
EP1760850B1 (en) 2013-05-22
CN1929219A (zh) 2007-03-14
EP1760850A3 (en) 2009-05-06
JP4920221B2 (ja) 2012-04-18
KR20070025989A (ko) 2007-03-08
US7772586B2 (en) 2010-08-10

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Granted publication date: 20090715

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