JP2009520377A5 - - Google Patents
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- Publication number
- JP2009520377A5 JP2009520377A5 JP2008547224A JP2008547224A JP2009520377A5 JP 2009520377 A5 JP2009520377 A5 JP 2009520377A5 JP 2008547224 A JP2008547224 A JP 2008547224A JP 2008547224 A JP2008547224 A JP 2008547224A JP 2009520377 A5 JP2009520377 A5 JP 2009520377A5
- Authority
- JP
- Japan
- Prior art keywords
- iii
- layered structure
- materials
- material containing
- inalas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 3
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/275,237 US7119377B2 (en) | 2004-06-18 | 2005-12-20 | II-VI/III-V layered construction on InP substrate |
| PCT/US2006/042614 WO2007073449A1 (en) | 2005-12-20 | 2006-10-31 | Ii-vi/iii-v layered construction on inp substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009520377A JP2009520377A (ja) | 2009-05-21 |
| JP2009520377A5 true JP2009520377A5 (enExample) | 2009-11-05 |
Family
ID=38188997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008547224A Pending JP2009520377A (ja) | 2005-12-20 | 2006-10-31 | ＩｎＰ基板上のＩＩ−ＶＩ／ＩＩＩ−Ｖ層状構造体 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7119377B2 (enExample) |
| EP (1) | EP1963094A4 (enExample) |
| JP (1) | JP2009520377A (enExample) |
| KR (1) | KR20080080540A (enExample) |
| CN (1) | CN101341022B (enExample) |
| TW (1) | TW200725933A (enExample) |
| WO (1) | WO2007073449A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
| TWI298555B (en) * | 2006-06-05 | 2008-07-01 | Epistar Corp | Light emitting device |
| US20080067370A1 (en) * | 2006-07-01 | 2008-03-20 | Mccaffrey John Patrick | Electron microscope and scanning probe microscope calibration device |
| EP2122695A4 (en) * | 2007-03-08 | 2013-09-11 | 3M Innovative Properties Co | NETWORK OF LUMINESCENT ELEMENTS |
| KR101538817B1 (ko) * | 2007-09-25 | 2015-07-22 | 퍼스트 솔라, 인코포레이티드 | 헤테로접합을 포함하는 광기전 장치 |
| CN102057504A (zh) * | 2008-06-05 | 2011-05-11 | 3M创新有限公司 | 接合有半导体波长转换器的发光二极管 |
| WO2010027648A1 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | I i-vi mqw vcsel on a heat sink optically pumped by a gan ld |
| US8385380B2 (en) | 2008-09-04 | 2013-02-26 | 3M Innovative Properties Company | Monochromatic light source |
| CN102804422A (zh) | 2009-05-05 | 2012-11-28 | 3M创新有限公司 | 用于与led结合使用的重发光半导体载流子器件及其制造方法 |
| US8994071B2 (en) | 2009-05-05 | 2015-03-31 | 3M Innovative Properties Company | Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms |
| JP2012532454A (ja) | 2009-06-30 | 2012-12-13 | スリーエム イノベイティブ プロパティズ カンパニー | カドミウム非含有の再発光半導体構成体 |
| JP2012532453A (ja) | 2009-06-30 | 2012-12-13 | スリーエム イノベイティブ プロパティズ カンパニー | 調節可能な色温度を備えた白色光エレクトロルミネセンスデバイス |
| US8304976B2 (en) | 2009-06-30 | 2012-11-06 | 3M Innovative Properties Company | Electroluminescent devices with color adjustment based on current crowding |
| SE534345C2 (sv) * | 2009-09-24 | 2011-07-19 | Svedice Ab | Fotodiod av typen lavinfotodiod. |
| US9431584B2 (en) * | 2010-06-03 | 2016-08-30 | 3M Innovative Properties Company | Light converting and emitting device with suppressed dark-line defects |
| US9318637B2 (en) * | 2011-06-15 | 2016-04-19 | 3M Innovative Properties Company | Solar cell with improved conversion efficiency |
| CN102280548A (zh) * | 2011-09-05 | 2011-12-14 | 厦门乾照光电股份有限公司 | 发光二极管结构及其制造方法 |
| US8895337B1 (en) * | 2012-01-19 | 2014-11-25 | Sandia Corporation | Method of fabricating vertically aligned group III-V nanowires |
| GB2504977B (en) * | 2012-08-16 | 2017-10-04 | Airbus Defence & Space Gmbh | Laser power converter |
| US20180151301A1 (en) * | 2016-11-25 | 2018-05-31 | The Boeing Company | Epitaxial perovskite materials for optoelectronics |
| BR102017000116A2 (pt) * | 2017-01-03 | 2018-07-24 | Carolina Dias Machado Paula | tri diodo para laserterapia e equipamento baseado em tri diodo para emprego em laserterapia |
| CN107230734A (zh) * | 2017-05-23 | 2017-10-03 | 中国人民解放军63791部队 | 一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法 |
| RU178900U1 (ru) * | 2017-12-15 | 2018-04-23 | Федеральное государственное бюджетное учреждение науки Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук (НТЦ микроэлектроники РАН) | Полупроводниковая гетероструктура для фотопреобразователей |
| US11585970B2 (en) * | 2019-10-04 | 2023-02-21 | Teledyne Scientific & Imaging, Llc | Low loss single crystal multilayer optical component and method of making same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3202985B2 (ja) * | 1989-09-04 | 2001-08-27 | 日本オプネクスト株式会社 | 半導体レーザ装置 |
| US5206871A (en) | 1991-12-27 | 1993-04-27 | At&T Bell Laboratories | Optical devices with electron-beam evaporated multilayer mirror |
| JPH05343796A (ja) * | 1992-06-08 | 1993-12-24 | Nec Corp | 面出射形半導体レーザ |
| FR2699337B1 (fr) | 1992-12-15 | 1995-06-09 | Deveaud Pledran Benoit | Laser a cavite verticale de faible resistivite. |
| JPH07249835A (ja) | 1994-03-11 | 1995-09-26 | Hitachi Ltd | 半導体光素子 |
| JP3333330B2 (ja) * | 1994-09-30 | 2002-10-15 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| US5956362A (en) | 1996-02-27 | 1999-09-21 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device and method of etching |
| US5732103A (en) | 1996-12-09 | 1998-03-24 | Motorola, Inc. | Long wavelength VCSEL |
| KR100237188B1 (ko) * | 1997-02-10 | 2000-02-01 | 정선종 | 튜너블 레이저 제조 방법 |
| JPH11145555A (ja) * | 1997-11-12 | 1999-05-28 | Oki Electric Ind Co Ltd | 面発光レーザ用ミラー構造およびその形成方法 |
| JP3334598B2 (ja) * | 1998-03-25 | 2002-10-15 | 日本電気株式会社 | ＩｎＰ基板上ＩＩ−ＶＩ族化合物半導体薄膜 |
| JP2938445B1 (ja) | 1998-09-07 | 1999-08-23 | 株式会社日立製作所 | 量子井戸光変調器とそれを用いた光通信用モジュールおよび光通信システム |
| JP2001085790A (ja) * | 1999-09-16 | 2001-03-30 | Toshiba Corp | 発光増幅素子 |
| US20020158265A1 (en) | 2001-04-26 | 2002-10-31 | Motorola, Inc. | Structure and method for fabricating high contrast reflective mirrors |
| US6873638B2 (en) * | 2001-06-29 | 2005-03-29 | 3M Innovative Properties Company | Laser diode chip with waveguide |
| JP2003124508A (ja) | 2001-10-15 | 2003-04-25 | Sharp Corp | 発光ダイオード、デバイス、該デバイスを用いた表示または通信用光源装置 |
| AU2003207090A1 (en) * | 2002-02-08 | 2003-09-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and its manufacturing method |
| US6801558B2 (en) * | 2002-06-14 | 2004-10-05 | Agilent Technologies, Inc. | Material systems for long wavelength lasers grown on InP substrates |
| US20050243887A1 (en) * | 2004-04-30 | 2005-11-03 | Honeywell International Inc. | DBR using the combination of II-VI and III-V materials for the application to 1.3-1.55 mum |
-
2005
- 2005-12-20 US US11/275,237 patent/US7119377B2/en not_active Expired - Fee Related
- 2005-12-22 TW TW094145960A patent/TW200725933A/zh unknown
-
2006
- 2006-10-31 CN CN200680048486XA patent/CN101341022B/zh not_active Expired - Fee Related
- 2006-10-31 WO PCT/US2006/042614 patent/WO2007073449A1/en not_active Ceased
- 2006-10-31 KR KR1020087014312A patent/KR20080080540A/ko not_active Ceased
- 2006-10-31 EP EP06827254.1A patent/EP1963094A4/en not_active Withdrawn
- 2006-10-31 JP JP2008547224A patent/JP2009520377A/ja active Pending
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