KR20080080540A - ＩｎＰ 기판 상의 Ⅱ-Ⅵ/Ⅲ-Ⅴ족 층상 구성 - Google Patents

ＩｎＰ 기판 상의 Ⅱ-Ⅵ/Ⅲ-Ⅴ족 층상 구성 Download PDF

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Publication number
KR20080080540A
KR20080080540A KR1020087014312A KR20087014312A KR20080080540A KR 20080080540 A KR20080080540 A KR 20080080540A KR 1020087014312 A KR1020087014312 A KR 1020087014312A KR 20087014312 A KR20087014312 A KR 20087014312A KR 20080080540 A KR20080080540 A KR 20080080540A
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South Korea
Prior art keywords
group
layer
materials
iii
group iii
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KR1020087014312A
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English (en)
Korean (ko)
Inventor
시아오구앙 썬
토마스 제이. 밀러
마이클 에이. 하세
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20080080540A publication Critical patent/KR20080080540A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020087014312A 2005-12-20 2006-10-31 ＩｎＰ 기판 상의 Ⅱ-Ⅵ/Ⅲ-Ⅴ족 층상 구성 Ceased KR20080080540A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/275,237 2005-12-20
US11/275,237 US7119377B2 (en) 2004-06-18 2005-12-20 II-VI/III-V layered construction on InP substrate

Publications (1)

Publication Number Publication Date
KR20080080540A true KR20080080540A (ko) 2008-09-04

Family

ID=38188997

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087014312A Ceased KR20080080540A (ko) 2005-12-20 2006-10-31 ＩｎＰ 기판 상의 Ⅱ-Ⅵ/Ⅲ-Ⅴ족 층상 구성

Country Status (7)

Country Link
US (1) US7119377B2 (enExample)
EP (1) EP1963094A4 (enExample)
JP (1) JP2009520377A (enExample)
KR (1) KR20080080540A (enExample)
CN (1) CN101341022B (enExample)
TW (1) TW200725933A (enExample)
WO (1) WO2007073449A1 (enExample)

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TWI298555B (en) * 2006-06-05 2008-07-01 Epistar Corp Light emitting device
US20080067370A1 (en) * 2006-07-01 2008-03-20 Mccaffrey John Patrick Electron microscope and scanning probe microscope calibration device
EP2122695A4 (en) * 2007-03-08 2013-09-11 3M Innovative Properties Co NETWORK OF LUMINESCENT ELEMENTS
US8525021B2 (en) * 2007-09-25 2013-09-03 First Solar, Inc. Photovoltaic devices including heterojunctions
WO2009148717A2 (en) * 2008-06-05 2009-12-10 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
WO2010027581A1 (en) 2008-09-04 2010-03-11 3M Innovative Properties Company Monochromatic light source
WO2010027648A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
CN102804411A (zh) * 2009-05-05 2012-11-28 3M创新有限公司 利用铟耗尽机理在含铟衬底上生长的半导体器件
JP2012526394A (ja) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Ｌｅｄとともに使用するための再発光半導体キャリア素子及び製造方法
CN102473817A (zh) 2009-06-30 2012-05-23 3M创新有限公司 无镉再发光半导体构造
CN102474932B (zh) 2009-06-30 2015-12-16 3M创新有限公司 具有可调节色温的白光电致发光器件
US8304976B2 (en) 2009-06-30 2012-11-06 3M Innovative Properties Company Electroluminescent devices with color adjustment based on current crowding
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WO2011153141A2 (en) * 2010-06-03 2011-12-08 3M Innovative Properties Company Light converting and emitting device with suppressed dark-line defects
CN103597614B (zh) * 2011-06-15 2017-03-01 3M创新有限公司 具有改善的转换效率的太阳能电池
CN102280548A (zh) * 2011-09-05 2011-12-14 厦门乾照光电股份有限公司 发光二极管结构及其制造方法
US8895337B1 (en) * 2012-01-19 2014-11-25 Sandia Corporation Method of fabricating vertically aligned group III-V nanowires
GB2504977B (en) 2012-08-16 2017-10-04 Airbus Defence & Space Gmbh Laser power converter
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics
BR102017000116A2 (pt) * 2017-01-03 2018-07-24 Carolina Dias Machado Paula tri diodo para laserterapia e equipamento baseado em tri diodo para emprego em laserterapia
CN107230734A (zh) * 2017-05-23 2017-10-03 中国人民解放军63791部队 一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法
RU178900U1 (ru) * 2017-12-15 2018-04-23 Федеральное государственное бюджетное учреждение науки Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук (НТЦ микроэлектроники РАН) Полупроводниковая гетероструктура для фотопреобразователей
US11585970B2 (en) * 2019-10-04 2023-02-21 Teledyne Scientific & Imaging, Llc Low loss single crystal multilayer optical component and method of making same

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Also Published As

Publication number Publication date
WO2007073449A1 (en) 2007-06-28
US20060102916A1 (en) 2006-05-18
CN101341022A (zh) 2009-01-07
EP1963094A1 (en) 2008-09-03
EP1963094A4 (en) 2014-03-19
US7119377B2 (en) 2006-10-10
JP2009520377A (ja) 2009-05-21
TW200725933A (en) 2007-07-01
CN101341022B (zh) 2012-01-11

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