JP2008294444A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008294444A5 JP2008294444A5 JP2008132744A JP2008132744A JP2008294444A5 JP 2008294444 A5 JP2008294444 A5 JP 2008294444A5 JP 2008132744 A JP2008132744 A JP 2008132744A JP 2008132744 A JP2008132744 A JP 2008132744A JP 2008294444 A5 JP2008294444 A5 JP 2008294444A5
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- semiconductor chip
- layer
- material component
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000000463 material Substances 0.000 claims 22
- 238000005253 cladding Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- 230000007423 decrease Effects 0.000 claims 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000011777 magnesium Substances 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007023878A DE102007023878A1 (de) | 2007-05-23 | 2007-05-23 | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008294444A JP2008294444A (ja) | 2008-12-04 |
| JP2008294444A5 true JP2008294444A5 (enExample) | 2011-05-26 |
Family
ID=39577752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008132744A Pending JP2008294444A (ja) | 2007-05-23 | 2008-05-21 | 半導体チップおよび半導体チップの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8093579B2 (enExample) |
| EP (1) | EP1995836B1 (enExample) |
| JP (1) | JP2008294444A (enExample) |
| DE (1) | DE102007023878A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011192816A (ja) * | 2010-03-15 | 2011-09-29 | Panasonic Corp | 半導体発光素子 |
| DE102010014667A1 (de) * | 2010-04-12 | 2011-10-13 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Stromaufweitungsschicht |
| US9130107B2 (en) * | 2011-08-31 | 2015-09-08 | Epistar Corporation | Light emitting device |
| JP6271934B2 (ja) | 2012-11-02 | 2018-01-31 | キヤノン株式会社 | 窒化物半導体面発光レーザ及びその製造方法 |
| KR102376468B1 (ko) * | 2014-12-23 | 2022-03-21 | 엘지이노텍 주식회사 | 적색 발광소자 및 조명장치 |
| JP6487236B2 (ja) * | 2015-02-18 | 2019-03-20 | 日本オクラロ株式会社 | 半導体光素子、及びその製造方法 |
| EP3073538B1 (en) | 2015-03-25 | 2020-07-01 | LG Innotek Co., Ltd. | Red light emitting device and lighting system |
| US11228160B2 (en) * | 2018-11-15 | 2022-01-18 | Sharp Kabushiki Kaisha | AlGaInPAs-based semiconductor laser device and method for producing same |
| JP7551564B2 (ja) * | 2021-04-21 | 2024-09-17 | 浜松ホトニクス株式会社 | 面発光レーザ素子 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264389A (en) | 1988-09-29 | 1993-11-23 | Sanyo Electric Co., Ltd. | Method of manufacturing a semiconductor laser device |
| US5204284A (en) * | 1989-01-19 | 1993-04-20 | Hewlett-Packard Company | Method of making a high band-gap opto-electronic device |
| JPH0485981A (ja) * | 1990-07-27 | 1992-03-18 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
| US5274656A (en) * | 1991-06-12 | 1993-12-28 | Sumitomo Electric Industries, Ltd. | Semiconductor laser |
| JP2911260B2 (ja) * | 1991-06-20 | 1999-06-23 | 三洋電機株式会社 | 半導体レーザの製造方法 |
| JP3053955B2 (ja) * | 1992-04-02 | 2000-06-19 | シャープ株式会社 | ＡｌＧａＡｓＰ半導体レーザ装置 |
| JP2783947B2 (ja) * | 1992-08-25 | 1998-08-06 | 沖電気工業株式会社 | 半導体レーザ |
| JPH06244490A (ja) * | 1993-02-15 | 1994-09-02 | Sumitomo Electric Ind Ltd | 半導体レーザおよびその製造方法 |
| JPH08139360A (ja) * | 1994-09-12 | 1996-05-31 | Showa Denko Kk | 半導体ヘテロ接合材料 |
| US6181721B1 (en) | 1996-05-20 | 2001-01-30 | Sdl, Inc. | Visible wavelength, semiconductor optoelectronic device with a high power broad, significantly laterally uniform, diffraction limited output beam |
| US6618413B2 (en) * | 2001-12-21 | 2003-09-09 | Xerox Corporation | Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
| JP2005353654A (ja) * | 2004-06-08 | 2005-12-22 | Mitsubishi Electric Corp | 半導体レーザ素子およびその製造方法 |
| JP2006128405A (ja) | 2004-10-28 | 2006-05-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2006344689A (ja) * | 2005-06-07 | 2006-12-21 | Rohm Co Ltd | 半導体素子 |
-
2007
- 2007-05-23 DE DE102007023878A patent/DE102007023878A1/de not_active Withdrawn
-
2008
- 2008-05-20 EP EP08009304.0A patent/EP1995836B1/de not_active Ceased
- 2008-05-21 JP JP2008132744A patent/JP2008294444A/ja active Pending
- 2008-05-23 US US12/154,552 patent/US8093579B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008294444A5 (enExample) | ||
| CN102569571B (zh) | 半导体发光二极管及其制造方法 | |
| JP5167974B2 (ja) | Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 | |
| JP2011222728A5 (enExample) | ||
| JP2011513954A5 (enExample) | ||
| WO2010021457A3 (ko) | 변조도핑층을 갖는 발광 다이오드 | |
| JP2012015535A5 (enExample) | ||
| JP2016531442A5 (enExample) | ||
| JP2013524547A5 (enExample) | ||
| CN102570310B (zh) | 基于环形谐振腔的多波长半导体激光器 | |
| TW201036204A (en) | Light emitting device having pillar structure with hollow structure and the forming method thereof | |
| JP2008294444A (ja) | 半導体チップおよび半導体チップの製造方法 | |
| JP2013504197A5 (enExample) | ||
| CN103715326B (zh) | 近红外发光二极管及其制造方法 | |
| CN102422445A (zh) | 发光二极管用外延晶片 | |
| JP7604595B2 (ja) | 半導体レーザダイオードおよび半導体レーザダイオードの製造方法 | |
| JP5889452B2 (ja) | Ｌｅｄ半導体素子 | |
| JP2005277218A (ja) | 発光素子及びその製造方法 | |
| WO2007072810A1 (ja) | 酸化物半導体発光素子 | |
| WO2011163186A1 (en) | Engineering emission wavelengths in laser and light emitting devices | |
| JP5337862B2 (ja) | 半導体発光素子 | |
| JP2019046971A (ja) | 発光装置の製造方法 | |
| JP5395887B2 (ja) | 半導体発光素子 | |
| CN204011467U (zh) | 近红外发光二极管 | |
| JP2005347714A (ja) | 発光素子及びその製造方法 |