JP2008502150A5 - - Google Patents
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- Publication number
- JP2008502150A5 JP2008502150A5 JP2007515542A JP2007515542A JP2008502150A5 JP 2008502150 A5 JP2008502150 A5 JP 2008502150A5 JP 2007515542 A JP2007515542 A JP 2007515542A JP 2007515542 A JP2007515542 A JP 2007515542A JP 2008502150 A5 JP2008502150 A5 JP 2008502150A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gas cluster
- ion beam
- cluster ion
- masking material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000007789 gas Substances 0.000 claims 36
- 238000000034 method Methods 0.000 claims 33
- 239000000463 material Substances 0.000 claims 31
- 238000010884 ion-beam technique Methods 0.000 claims 23
- 230000000873 masking effect Effects 0.000 claims 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 8
- 239000011810 insulating material Substances 0.000 claims 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- 229910052760 oxygen Inorganic materials 0.000 claims 8
- 230000009977 dual effect Effects 0.000 claims 7
- 150000002500 ions Chemical class 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910052786 argon Inorganic materials 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 239000006117 anti-reflective coating Substances 0.000 claims 2
- 238000000280 densification Methods 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 1
- 238000003672 processing method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US57643904P | 2004-06-03 | 2004-06-03 | |
| PCT/US2005/019316 WO2005122224A2 (en) | 2004-06-03 | 2005-06-02 | Improved dual damascene integration structures and method of forming improved dual damascene integration structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008502150A JP2008502150A (ja) | 2008-01-24 |
| JP2008502150A5 true JP2008502150A5 (enExample) | 2008-09-11 |
Family
ID=35503817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515542A Withdrawn JP2008502150A (ja) | 2004-06-03 | 2005-06-02 | 改善された二重ダマシン集積構造およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US20050272237A1 (enExample) |
| EP (1) | EP1759407A2 (enExample) |
| JP (1) | JP2008502150A (enExample) |
| WO (1) | WO2005122224A2 (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040229452A1 (en) * | 2003-05-15 | 2004-11-18 | Johnston Steven W. | Densifying a relatively porous material |
| US7709344B2 (en) * | 2005-11-22 | 2010-05-04 | International Business Machines Corporation | Integrated circuit fabrication process using gas cluster ion beam etching |
| US20070218698A1 (en) * | 2006-03-16 | 2007-09-20 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus, and computer-readable storage medium |
| US7816253B2 (en) * | 2006-03-23 | 2010-10-19 | International Business Machines Corporation | Surface treatment of inter-layer dielectric |
| US7838428B2 (en) * | 2006-03-23 | 2010-11-23 | International Business Machines Corporation | Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species |
| US7781154B2 (en) * | 2006-03-28 | 2010-08-24 | Applied Materials, Inc. | Method of forming damascene structure |
| US8034722B2 (en) * | 2006-04-07 | 2011-10-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming dual damascene semiconductor device |
| US20080124924A1 (en) * | 2006-07-18 | 2008-05-29 | Applied Materials, Inc. | Scheme for copper filling in vias and trenches |
| US7618889B2 (en) * | 2006-07-18 | 2009-11-17 | Applied Materials, Inc. | Dual damascene fabrication with low k materials |
| US7884026B2 (en) * | 2006-07-20 | 2011-02-08 | United Microelectronics Corp. | Method of fabricating dual damascene structure |
| US7815815B2 (en) | 2006-08-01 | 2010-10-19 | Sony Corporation | Method and apparatus for processing the peripheral and edge portions of a wafer after performance of a surface treatment thereon |
| US7329956B1 (en) * | 2006-09-12 | 2008-02-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual damascene cleaning method |
| US20080090402A1 (en) * | 2006-09-29 | 2008-04-17 | Griselda Bonilla | Densifying surface of porous dielectric layer using gas cluster ion beam |
| US7622403B2 (en) * | 2006-12-19 | 2009-11-24 | Chartered Semiconductor Manufacturing Ltd. | Semiconductor processing system with ultra low-K dielectric |
| US8618663B2 (en) | 2007-09-20 | 2013-12-31 | International Business Machines Corporation | Patternable dielectric film structure with improved lithography and method of fabricating same |
| US8084862B2 (en) | 2007-09-20 | 2011-12-27 | International Business Machines Corporation | Interconnect structures with patternable low-k dielectrics and method of fabricating same |
| US7709370B2 (en) | 2007-09-20 | 2010-05-04 | International Business Machines Corporation | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures |
| JP2009094378A (ja) * | 2007-10-11 | 2009-04-30 | Panasonic Corp | 半導体装置及びその製造方法 |
| US7981308B2 (en) * | 2007-12-31 | 2011-07-19 | Robert Bosch Gmbh | Method of etching a device using a hard mask and etch stop layer |
| JP5026354B2 (ja) * | 2008-06-23 | 2012-09-12 | 日本航空電子工業株式会社 | 固体表面の加工装置 |
| US8202435B2 (en) * | 2008-08-01 | 2012-06-19 | Tel Epion Inc. | Method for selectively etching areas of a substrate using a gas cluster ion beam |
| JP5587550B2 (ja) * | 2008-12-26 | 2014-09-10 | 日本航空電子工業株式会社 | 固体表面の封孔処理方法及び電子部品の製造方法 |
| US7947582B2 (en) * | 2009-02-27 | 2011-05-24 | Tel Epion Inc. | Material infusion in a trap layer structure using gas cluster ion beam processing |
| US8226835B2 (en) * | 2009-03-06 | 2012-07-24 | Tel Epion Inc. | Ultra-thin film formation using gas cluster ion beam processing |
| JP5522979B2 (ja) * | 2009-06-16 | 2014-06-18 | 国立大学法人東北大学 | 成膜方法及び処理システム |
| US8288271B2 (en) * | 2009-11-02 | 2012-10-16 | International Business Machines Corporation | Method for reworking antireflective coating over semiconductor substrate |
| US8377823B2 (en) * | 2010-02-17 | 2013-02-19 | Renesas Electronics Corporation | Semiconductor device including porous layer covered by poreseal layer |
| US8334203B2 (en) * | 2010-06-11 | 2012-12-18 | International Business Machines Corporation | Interconnect structure and method of fabricating |
| JP2012204591A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 膜形成方法および不揮発性記憶装置 |
| US8835324B2 (en) * | 2011-07-01 | 2014-09-16 | United Microelectronics Corp. | Method for forming contact holes |
| US8512586B2 (en) | 2011-09-01 | 2013-08-20 | Tel Epion Inc. | Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials |
| US8513138B2 (en) | 2011-09-01 | 2013-08-20 | Tel Epion Inc. | Gas cluster ion beam etching process for Si-containing and Ge-containing materials |
| US8557710B2 (en) | 2011-09-01 | 2013-10-15 | Tel Epion Inc. | Gas cluster ion beam etching process for metal-containing materials |
| US8946081B2 (en) | 2012-04-17 | 2015-02-03 | International Business Machines Corporation | Method for cleaning semiconductor substrate |
| JP2013251358A (ja) * | 2012-05-31 | 2013-12-12 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
| US8728947B2 (en) | 2012-06-08 | 2014-05-20 | Tel Epion Inc. | Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via |
| US8722542B2 (en) | 2012-06-08 | 2014-05-13 | Tel Epion Inc. | Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via |
| US9058983B2 (en) | 2013-06-17 | 2015-06-16 | International Business Machines Corporation | In-situ hardmask generation |
| US9209033B2 (en) | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
| US9385086B2 (en) | 2013-12-10 | 2016-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bi-layer hard mask for robust metallization profile |
| US9330915B2 (en) * | 2013-12-10 | 2016-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface pre-treatment for hard mask fabrication |
| JP6126570B2 (ja) * | 2013-12-13 | 2017-05-10 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法 |
| US9613906B2 (en) * | 2014-06-23 | 2017-04-04 | GlobalFoundries, Inc. | Integrated circuits including modified liners and methods for fabricating the same |
| US20160064239A1 (en) * | 2014-08-28 | 2016-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Integrated Circuit Patterning |
| CN105789111B (zh) * | 2014-12-18 | 2019-03-12 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
| WO2016176569A1 (en) * | 2015-04-30 | 2016-11-03 | Tel Epion Inc. | Method of surface profile correction using gas cluster ion beam |
| US10535566B2 (en) | 2016-04-28 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| US10522349B2 (en) | 2017-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective coating by ion implantation for lithography patterning |
| JP2021150380A (ja) * | 2020-03-17 | 2021-09-27 | キオクシア株式会社 | 膜処理方法および半導体装置の製造方法 |
| US12293922B2 (en) * | 2022-03-31 | 2025-05-06 | Nanya Technology Corporation | Reworking process of a failed hard mask for fabricating a semiconductor device |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4423547A (en) | 1981-06-01 | 1984-01-03 | International Business Machines Corporation | Method for forming dense multilevel interconnection metallurgy for semiconductor devices |
| JP3169151B2 (ja) * | 1992-10-26 | 2001-05-21 | 三菱電機株式会社 | 薄膜形成装置 |
| JP3152018B2 (ja) * | 1993-06-24 | 2001-04-03 | 双葉電子工業株式会社 | 電界放出素子の製造方法 |
| US5814194A (en) | 1994-10-20 | 1998-09-29 | Matsushita Electric Industrial Co., Ltd | Substrate surface treatment method |
| US5731624A (en) | 1996-06-28 | 1998-03-24 | International Business Machines Corporation | Integrated pad and fuse structure for planar copper metallurgy |
| US5985762A (en) | 1997-05-19 | 1999-11-16 | International Business Machines Corporation | Method of forming a self-aligned copper diffusion barrier in vias |
| US6492732B2 (en) * | 1997-07-28 | 2002-12-10 | United Microelectronics Corp. | Interconnect structure with air gap compatible with unlanded vias |
| SG70654A1 (en) | 1997-09-30 | 2000-02-22 | Ibm | Copper stud structure with refractory metal liner |
| US6171951B1 (en) * | 1998-10-30 | 2001-01-09 | United Microelectronic Corp. | Dual damascene method comprising ion implanting to densify dielectric layer and forming a hard mask layer with a tapered opening |
| US6159842A (en) * | 1999-01-11 | 2000-12-12 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a hybrid low-dielectric-constant intermetal dielectric (IMD) layer with improved reliability for multilevel interconnections |
| EP1238406B1 (en) * | 1999-12-06 | 2008-12-17 | TEL Epion Inc. | Gas cluster ion beam smoother apparatus |
| US6331227B1 (en) * | 1999-12-14 | 2001-12-18 | Epion Corporation | Enhanced etching/smoothing of dielectric surfaces |
| US6426249B1 (en) | 2000-03-16 | 2002-07-30 | International Business Machines Corporation | Buried metal dual damascene plate capacitor |
| US6452251B1 (en) | 2000-03-31 | 2002-09-17 | International Business Machines Corporation | Damascene metal capacitor |
| US6503827B1 (en) | 2000-06-28 | 2003-01-07 | International Business Machines Corporation | Method of reducing planarization defects |
| US6426304B1 (en) * | 2000-06-30 | 2002-07-30 | Lam Research Corporation | Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications |
| DE60140749D1 (de) * | 2000-07-10 | 2010-01-21 | Tel Epion Inc | Ung |
| US6455411B1 (en) * | 2000-09-11 | 2002-09-24 | Texas Instruments Incorporated | Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics |
| US6475929B1 (en) * | 2001-02-01 | 2002-11-05 | Advanced Micro Devices, Inc. | Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant |
| WO2002089702A2 (en) * | 2001-05-09 | 2002-11-14 | Epion Corporation | Method and system for improving the effectiveness of artificial joints by the application of gas cluster ion beam technology |
| US6426558B1 (en) | 2001-05-14 | 2002-07-30 | International Business Machines Corporation | Metallurgy for semiconductor devices |
| JP2005512312A (ja) * | 2001-10-11 | 2005-04-28 | エピオン コーポレイション | 相互接続バイアを改善するためのｇｃｉｂ処理および改善された相互接続バイア |
| JP3881562B2 (ja) * | 2002-02-22 | 2007-02-14 | 三井造船株式会社 | ＳｉＣモニタウェハ製造方法 |
| US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
| US6888251B2 (en) | 2002-07-01 | 2005-05-03 | International Business Machines Corporation | Metal spacer in single and dual damascene processing |
| US6846741B2 (en) | 2002-07-24 | 2005-01-25 | International Business Machines Corporation | Sacrificial metal spacer damascene process |
| WO2004044954A2 (en) | 2002-11-08 | 2004-05-27 | Epion Corporation | Gcib processing of integrated circuit interconnect structures |
| EP1584104A4 (en) | 2002-12-12 | 2010-05-26 | Tel Epion Inc | RE-CRYSTALLIZATION OF A SEMICONDUCTIVE SURFACE FILM AND SEMICONDUCTOR DOTING BY MEANS OF ENERGETIC CLUSTER RADIATION |
| JP3895281B2 (ja) * | 2003-02-18 | 2007-03-22 | Ｔｄｋ株式会社 | パターン形成方法、これを用いた磁気抵抗効果素子及び磁気ヘッドの製造方法、並びに、ヘッドサスペンションアセンブリ及び磁気ディスク装置 |
| US7238604B2 (en) * | 2003-04-24 | 2007-07-03 | Intel Corporation | Forming thin hard mask over air gap or porous dielectric |
| US7223705B2 (en) * | 2003-05-06 | 2007-05-29 | Intel Corporation | Ambient gas treatment of porous dielectric |
| US20040229452A1 (en) * | 2003-05-15 | 2004-11-18 | Johnston Steven W. | Densifying a relatively porous material |
| US7088003B2 (en) * | 2004-02-19 | 2006-08-08 | International Business Machines Corporation | Structures and methods for integration of ultralow-k dielectrics with improved reliability |
| US7244674B2 (en) * | 2004-04-27 | 2007-07-17 | Agency For Science Technology And Research | Process of forming a composite diffusion barrier in copper/organic low-k damascene technology |
-
2005
- 2005-06-02 US US11/143,831 patent/US20050272237A1/en not_active Abandoned
- 2005-06-02 WO PCT/US2005/019316 patent/WO2005122224A2/en not_active Ceased
- 2005-06-02 JP JP2007515542A patent/JP2008502150A/ja not_active Withdrawn
- 2005-06-02 EP EP05755487A patent/EP1759407A2/en not_active Withdrawn
- 2005-06-02 US US11/143,421 patent/US7759251B2/en not_active Expired - Fee Related
-
2008
- 2008-10-06 US US12/246,352 patent/US20090130861A1/en not_active Abandoned
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