JP2008502147A5 - - Google Patents
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- Publication number
- JP2008502147A5 JP2008502147A5 JP2007515460A JP2007515460A JP2008502147A5 JP 2008502147 A5 JP2008502147 A5 JP 2008502147A5 JP 2007515460 A JP2007515460 A JP 2007515460A JP 2007515460 A JP2007515460 A JP 2007515460A JP 2008502147 A5 JP2008502147 A5 JP 2008502147A5
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- chamber
- protective layer
- substrate
- evacuating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 13
- 229910052715 tantalum Inorganic materials 0.000 claims 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 239000002243 precursor Substances 0.000 claims 6
- 239000011241 protective layer Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910004529 TaF 5 Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 claims 1
- MISXNQITXACHNJ-UHFFFAOYSA-I tantalum(5+);pentaiodide Chemical compound [I-].[I-].[I-].[I-].[I-].[Ta+5] MISXNQITXACHNJ-UHFFFAOYSA-I 0.000 claims 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 claims 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical group Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/709,865 US7211507B2 (en) | 2004-06-02 | 2004-06-02 | PE-ALD of TaN diffusion barrier region on low-k materials |
| US10/709,865 | 2004-06-02 | ||
| PCT/US2005/018953 WO2005122253A2 (en) | 2004-06-02 | 2005-05-31 | PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008502147A JP2008502147A (ja) | 2008-01-24 |
| JP2008502147A5 true JP2008502147A5 (enExample) | 2008-05-15 |
| JP4791456B2 JP4791456B2 (ja) | 2011-10-12 |
Family
ID=35446788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515460A Expired - Fee Related JP4791456B2 (ja) | 2004-06-02 | 2005-05-31 | 低ｋ材料上にＴａＮ拡散バリア領域を堆積する方法（低ｋ材料上のＴａＮ拡散バリア領域のＰＥ−ＡＬＤ） |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7211507B2 (enExample) |
| EP (1) | EP1756856B1 (enExample) |
| JP (1) | JP4791456B2 (enExample) |
| CN (1) | CN100447955C (enExample) |
| TW (1) | TWI345273B (enExample) |
| WO (1) | WO2005122253A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
| US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
| KR100552820B1 (ko) * | 2004-09-17 | 2006-02-21 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
| US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
| US7598170B2 (en) * | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
| US7595270B2 (en) * | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
| JP5358893B2 (ja) * | 2007-04-03 | 2013-12-04 | 三菱電機株式会社 | トランジスタ |
| DE602007013386D1 (de) * | 2007-07-17 | 2011-05-05 | St Microelectronics Srl | Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement |
| JP5551681B2 (ja) * | 2008-04-16 | 2014-07-16 | エーエスエム アメリカ インコーポレイテッド | アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積 |
| US20100055442A1 (en) * | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
| CN101740369B (zh) * | 2008-11-19 | 2011-12-07 | 中国科学院微电子研究所 | 一种制备金属性金属氮化物薄膜的方法 |
| US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
| US8736056B2 (en) * | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
| US8962473B2 (en) | 2013-03-15 | 2015-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming hybrid diffusion barrier layer and semiconductor device thereof |
| CN104109844B (zh) * | 2013-04-18 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 一种基于原子层沉积技术的氮化钽薄膜的制作工艺 |
| KR102216575B1 (ko) | 2014-10-23 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들 |
| CN106086809B (zh) * | 2016-06-17 | 2018-08-17 | 艾因斯（北京）钽应用科技有限公司 | 一种制备耐腐耐磨钽复合涂层的方法 |
| US10008558B1 (en) * | 2017-01-05 | 2018-06-26 | International Business Machines Corporation | Advanced metal insulator metal capacitor |
| US10032855B1 (en) | 2017-01-05 | 2018-07-24 | International Business Machines Corporation | Advanced metal insulator metal capacitor |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2359825A (en) * | 1998-11-12 | 2001-09-05 | Applied Materials Inc | Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering |
| US6482733B2 (en) * | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| EP2293322A1 (en) * | 2000-06-08 | 2011-03-09 | Genitech, Inc. | Method for forming a metal nitride layer |
| KR100386034B1 (ko) * | 2000-12-06 | 2003-06-02 | 에이에스엠 마이크로케미스트리 리미티드 | 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법 |
| US6428859B1 (en) * | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US20020117399A1 (en) * | 2001-02-23 | 2002-08-29 | Applied Materials, Inc. | Atomically thin highly resistive barrier layer in a copper via |
| US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| JP2004165634A (ja) * | 2002-08-15 | 2004-06-10 | Interuniv Micro Electronica Centrum Vzw | Ａｌｄ表面処理のためのプラズマ処理 |
| JP3935428B2 (ja) * | 2002-12-27 | 2007-06-20 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| US20040175926A1 (en) * | 2003-03-07 | 2004-09-09 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor component having a barrier-lined opening |
| JP4579157B2 (ja) * | 2003-03-25 | 2010-11-10 | 東京エレクトロン株式会社 | 処理装置及び切り替え機構 |
| JP2004311545A (ja) * | 2003-04-03 | 2004-11-04 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び高融点金属膜の堆積装置 |
| US7186446B2 (en) * | 2003-10-31 | 2007-03-06 | International Business Machines Corporation | Plasma enhanced ALD of tantalum nitride and bilayer |
| JP2005191290A (ja) * | 2003-12-25 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
| US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
| JP2006128542A (ja) * | 2004-11-01 | 2006-05-18 | Nec Electronics Corp | 電子デバイスの製造方法 |
-
2004
- 2004-06-02 US US10/709,865 patent/US7211507B2/en not_active Expired - Lifetime
-
2005
- 2005-05-30 TW TW094117722A patent/TWI345273B/zh not_active IP Right Cessation
- 2005-05-31 CN CNB2005800180516A patent/CN100447955C/zh not_active Expired - Lifetime
- 2005-05-31 WO PCT/US2005/018953 patent/WO2005122253A2/en not_active Ceased
- 2005-05-31 EP EP05755089.9A patent/EP1756856B1/en not_active Expired - Lifetime
- 2005-05-31 JP JP2007515460A patent/JP4791456B2/ja not_active Expired - Fee Related
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