JP4791456B2 - 低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE−ALD) - Google Patents
低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE−ALD) Download PDFInfo
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical group Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 229910004529 TaF 5 Inorganic materials 0.000 claims description 2
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- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 claims description 2
- MISXNQITXACHNJ-UHFFFAOYSA-I tantalum(5+);pentaiodide Chemical compound [I-].[I-].[I-].[I-].[I-].[Ta+5] MISXNQITXACHNJ-UHFFFAOYSA-I 0.000 claims description 2
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 claims description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- Chemical Kinetics & Catalysis (AREA)
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Description
Claims (11)
- 原子状水素に暴露されると反応する低k材料基板上にタンタル−窒化物の拡散バリア領域を形成する方法であって、
チャンバにおいて第1の数の第1のサイクルを実行することによって前記低k材料基板(102)上に隣接して保護層(104)を形成するステップであって、各第1のサイクルが、
前記低k材料基板をタンタル系前駆物質に暴露するステップと、
前記チャンバを排気するステップと、
前記タンタル系前駆物質および窒素プラズマからプラズマ増強原子層堆積(PE−ALD)を行うステップと、
前記チャンバを排気するステップと、
を含む、ステップと、
前記保護層(104)を形成するステップ後、前記チャンバにおいて第2の数の第2のサイクルを実行することによって次の実質的化学量論的タンタル−窒化物拡散バリア層(108)を前記保護層(104)上に隣接して形成するステップであって、各第2のサイクルが、
前記低k材料基板をタンタル系前駆物質に暴露するステップと、
前記チャンバを排気するステップと、
前記タンタル系前駆物質ならびに水素および窒素のプラズマからPE−ALDを行うステップと、
前記チャンバを排気するステップと、
を含む、ステップと、
を含む、方法。 - 前記タンタル系前駆物質が、五塩化タンタル(TaCl5)、五ヨウ化タンタル(TaI5)、五フッ化タンタル(TaF5)、および五臭化タンタル(TaBr5)から成る群から選択される、請求項1に記載の方法。
- 前記暴露するステップが、更に、前記タンタル系前駆物質のためのキャリア・ガスを提供することを含む、請求項1に記載の方法。
- 前記キャリア・ガスがアルゴンを含む、請求項3に記載の方法。
- 前記保護層(104)が、タンタル含有量よりも多い窒素含有量を含む、請求項1に記載の方法。
- 前記保護層(104)を形成するステップが、1000ラングミュアより大きい前記低k材料基板(102)の暴露を含む、請求項1に記載の方法。
- 前記第1のサイクル数が、前記第2のサイクル数よりも小さい、請求項1に記載の方法。
- 前記低k材料と前記保護層(104)との間に実質的に拡散が存在しない、請求項1に記載の方法。
- 前記タンタル−窒化物が、Ta3N5、Ta4N5、およびTa5N6から成る群から選択される、請求項1に記載の方法。
- 前記保護層(104)が820℃よりも大きい熱安定性を有する、請求項1に記載の方法。
- 前記タンタル−窒化物拡散バリア層(108)が前記保護層(104)よりも厚い、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/709,865 US7211507B2 (en) | 2004-06-02 | 2004-06-02 | PE-ALD of TaN diffusion barrier region on low-k materials |
US10/709,865 | 2004-06-02 | ||
PCT/US2005/018953 WO2005122253A2 (en) | 2004-06-02 | 2005-05-31 | PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS |
Publications (3)
Publication Number | Publication Date |
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JP2008502147A JP2008502147A (ja) | 2008-01-24 |
JP2008502147A5 JP2008502147A5 (ja) | 2008-05-15 |
JP4791456B2 true JP4791456B2 (ja) | 2011-10-12 |
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JP2007515460A Expired - Fee Related JP4791456B2 (ja) | 2004-06-02 | 2005-05-31 | 低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE−ALD) |
Country Status (6)
Country | Link |
---|---|
US (1) | US7211507B2 (ja) |
EP (1) | EP1756856B1 (ja) |
JP (1) | JP4791456B2 (ja) |
CN (1) | CN100447955C (ja) |
TW (1) | TWI345273B (ja) |
WO (1) | WO2005122253A2 (ja) |
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US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
KR100552820B1 (ko) * | 2004-09-17 | 2006-02-21 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
US7598170B2 (en) * | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
US7595270B2 (en) * | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
JP5358893B2 (ja) * | 2007-04-03 | 2013-12-04 | 三菱電機株式会社 | トランジスタ |
EP2017906B1 (en) * | 2007-07-17 | 2011-03-23 | STMicroelectronics Srl | Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element |
WO2009129332A2 (en) * | 2008-04-16 | 2009-10-22 | Asm America, Inc. | Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds |
US20100055442A1 (en) * | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
CN101740369B (zh) * | 2008-11-19 | 2011-12-07 | 中国科学院微电子研究所 | 一种制备金属性金属氮化物薄膜的方法 |
US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
US8736056B2 (en) | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
US8962473B2 (en) | 2013-03-15 | 2015-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming hybrid diffusion barrier layer and semiconductor device thereof |
CN104109844B (zh) * | 2013-04-18 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 一种基于原子层沉积技术的氮化钽薄膜的制作工艺 |
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CN106086809B (zh) * | 2016-06-17 | 2018-08-17 | 艾因斯(北京)钽应用科技有限公司 | 一种制备耐腐耐磨钽复合涂层的方法 |
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CN100447955C (zh) | 2008-12-31 |
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TW200540996A (en) | 2005-12-16 |
TWI345273B (en) | 2011-07-11 |
CN101036217A (zh) | 2007-09-12 |
EP1756856A2 (en) | 2007-02-28 |
WO2005122253A2 (en) | 2005-12-22 |
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