JP2008502147A - 低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE−ALD) - Google Patents
低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE−ALD) Download PDFInfo
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 38
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 38
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- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- 229910004529 TaF 5 Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 claims description 2
- MISXNQITXACHNJ-UHFFFAOYSA-I tantalum(5+);pentaiodide Chemical compound [I-].[I-].[I-].[I-].[I-].[Ta+5] MISXNQITXACHNJ-UHFFFAOYSA-I 0.000 claims description 2
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 claims description 2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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Abstract
【解決手段】この方法は、チャンバにおいてタンタル系前駆物質および窒素プラズマからプラズマ増強原子層堆積(PE−ALD)を実行することによって、低k材料基板(102)上に保護層(104)を形成することを含む。保護層(104)は、そのタンタル含有量よりも大きい窒素含有量を有する。次いで、タンタル系前駆物質ならびに水素および窒素を含むプラズマからPE−ALDを実行することによって、次の実質的化学量論的タンタル−窒化物層を形成する。また、本発明は、このように形成したタンタル−窒化物拡散バリア領域(108)も含む。一実施形態において、金属前駆物質は、五塩化タンタル(TaCl5)を含む。本発明は、低k材料とライナ材料との間に鮮鋭な界面を生成する。
【選択図】 図1
Description
Claims (12)
- 基板上にタンタル−窒化物拡散バリア領域を形成する方法であって、
チャンバ内で第1の数の第1のサイクルを実行することによって低k材料基板(102)上に保護層(104)を形成するステップであって、各第1のサイクルが、
前記基板をタンタル系前駆物質に暴露するステップと、
前記チャンバを排気するステップと、
前記タンタル系前駆物質および窒素プラズマからプラズマ増強原子層堆積(PE−ALD)を行うステップと、
前記チャンバを排気するステップと、
を含む、ステップと、
前記チャンバ内で第2の数の第2のサイクルを実行することによって次の実質的化学量論的タンタル−窒化物拡散バリア層(108)を形成するステップであって、各第2のサイクルが、
前記基板をタンタル系前駆物質に暴露するステップと、
前記チャンバを排気するステップと、
前記タンタル系前駆物質ならびに水素および窒素のプラズマからPE−ALDを行うステップと、
前記チャンバを排気するステップと、
を含む、ステップと、
を含む、方法。 - 前記タンタル系前駆物質が、五塩化タンタル(TaCl5)、五ヨウ化タンタル(TaI5)、五フッ化タンタル(TaF5)、および五臭化タンタル(TaBr5)から成る群から選択される、請求項1に記載の方法。
- 前記暴露するステップが、更に、前記タンタル系前駆物質のためのキャリア・ガスを提供することを含む、請求項1に記載の方法。
- 前記キャリア・ガスがアルゴンを含む、請求項3に記載の方法。
- 前記保護層(104)が、タンタル含有量よりも多い窒素含有量を含む、請求項1に記載の方法。
- 前記保護層(104)を形成するステップが、1000ラングミュアより大きい前記低k材料基板(102)の暴露を含む、請求項1に記載の方法。
- 前記基板が、二酸化シリコン(SiO2)、フッ化水素(HF)浸漬シリコン(Si)、および低k材料から成る群から選択される、請求項1に記載の方法。
- 前記第1のサイクル数が、前記第2のサイクル数よりも小さい、請求項1に記載の方法。
- 前記低k材料と前記保護層(104)との間に実質的に拡散が存在しない、請求項1に記載の方法。
- 前記タンタル−窒化物材料が、Ta3N5、Ta4N5、およびTa5N6から成る群から選択される、請求項1に記載の方法。
- 前記保護層(104)が約820℃よりも大きい熱安定性を有する、請求項1に記載の方法。
- 前記タンタル−窒化物拡散バリア層(108)が前記保護層(104)よりも厚い、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/709,865 | 2004-06-02 | ||
US10/709,865 US7211507B2 (en) | 2004-06-02 | 2004-06-02 | PE-ALD of TaN diffusion barrier region on low-k materials |
PCT/US2005/018953 WO2005122253A2 (en) | 2004-06-02 | 2005-05-31 | PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS |
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JP2008502147A true JP2008502147A (ja) | 2008-01-24 |
JP2008502147A5 JP2008502147A5 (ja) | 2008-05-15 |
JP4791456B2 JP4791456B2 (ja) | 2011-10-12 |
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JP2007515460A Expired - Fee Related JP4791456B2 (ja) | 2004-06-02 | 2005-05-31 | 低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE−ALD) |
Country Status (6)
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US (1) | US7211507B2 (ja) |
EP (1) | EP1756856B1 (ja) |
JP (1) | JP4791456B2 (ja) |
CN (1) | CN100447955C (ja) |
TW (1) | TWI345273B (ja) |
WO (1) | WO2005122253A2 (ja) |
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US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
KR100552820B1 (ko) * | 2004-09-17 | 2006-02-21 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
US7595270B2 (en) * | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
US7598170B2 (en) * | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
JP5358893B2 (ja) * | 2007-04-03 | 2013-12-04 | 三菱電機株式会社 | トランジスタ |
DE602007013386D1 (de) * | 2007-07-17 | 2011-05-05 | St Microelectronics Srl | Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement |
JP5551681B2 (ja) * | 2008-04-16 | 2014-07-16 | エーエスエム アメリカ インコーポレイテッド | アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積 |
US20100055442A1 (en) * | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
CN101740369B (zh) * | 2008-11-19 | 2011-12-07 | 中国科学院微电子研究所 | 一种制备金属性金属氮化物薄膜的方法 |
US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
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CN104109844B (zh) * | 2013-04-18 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 一种基于原子层沉积技术的氮化钽薄膜的制作工艺 |
KR102216575B1 (ko) | 2014-10-23 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들 |
CN106086809B (zh) * | 2016-06-17 | 2018-08-17 | 艾因斯(北京)钽应用科技有限公司 | 一种制备耐腐耐磨钽复合涂层的方法 |
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TWI345273B (en) | 2011-07-11 |
US20050269703A1 (en) | 2005-12-08 |
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WO2005122253A3 (en) | 2006-12-14 |
TW200540996A (en) | 2005-12-16 |
JP4791456B2 (ja) | 2011-10-12 |
US7211507B2 (en) | 2007-05-01 |
EP1756856B1 (en) | 2013-07-24 |
CN100447955C (zh) | 2008-12-31 |
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CN101036217A (zh) | 2007-09-12 |
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