CN100447955C - 在低热导率材料上沉积氮化钽扩散阻挡区域的方法 - Google Patents

在低热导率材料上沉积氮化钽扩散阻挡区域的方法 Download PDF

Info

Publication number
CN100447955C
CN100447955C CNB2005800180516A CN200580018051A CN100447955C CN 100447955 C CN100447955 C CN 100447955C CN B2005800180516 A CNB2005800180516 A CN B2005800180516A CN 200580018051 A CN200580018051 A CN 200580018051A CN 100447955 C CN100447955 C CN 100447955C
Authority
CN
China
Prior art keywords
tantalum
protective layer
diffusion barrier
low
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2005800180516A
Other languages
English (en)
Chinese (zh)
Other versions
CN101036217A (zh
Inventor
德伦·N·邓恩
金亨俊
斯蒂芬·M·罗斯纳杰尔
徐顺天
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN101036217A publication Critical patent/CN101036217A/zh
Application granted granted Critical
Publication of CN100447955C publication Critical patent/CN100447955C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2005800180516A 2004-06-02 2005-05-31 在低热导率材料上沉积氮化钽扩散阻挡区域的方法 Expired - Lifetime CN100447955C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/709,865 US7211507B2 (en) 2004-06-02 2004-06-02 PE-ALD of TaN diffusion barrier region on low-k materials
US10/709,865 2004-06-02

Publications (2)

Publication Number Publication Date
CN101036217A CN101036217A (zh) 2007-09-12
CN100447955C true CN100447955C (zh) 2008-12-31

Family

ID=35446788

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800180516A Expired - Lifetime CN100447955C (zh) 2004-06-02 2005-05-31 在低热导率材料上沉积氮化钽扩散阻挡区域的方法

Country Status (6)

Country Link
US (1) US7211507B2 (enExample)
EP (1) EP1756856B1 (enExample)
JP (1) JP4791456B2 (enExample)
CN (1) CN100447955C (enExample)
TW (1) TWI345273B (enExample)
WO (1) WO2005122253A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
KR100552820B1 (ko) * 2004-09-17 2006-02-21 동부아남반도체 주식회사 반도체 소자의 제조 방법
US7482289B2 (en) * 2006-08-25 2009-01-27 Battelle Memorial Institute Methods and apparatus for depositing tantalum metal films to surfaces and substrates
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
JP5358893B2 (ja) * 2007-04-03 2013-12-04 三菱電機株式会社 トランジスタ
DE602007013386D1 (de) * 2007-07-17 2011-05-05 St Microelectronics Srl Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement
JP5551681B2 (ja) * 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
US20100055442A1 (en) * 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
CN101740369B (zh) * 2008-11-19 2011-12-07 中国科学院微电子研究所 一种制备金属性金属氮化物薄膜的方法
US9177826B2 (en) * 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
US8962473B2 (en) 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
CN104109844B (zh) * 2013-04-18 2016-07-06 中芯国际集成电路制造(上海)有限公司 一种基于原子层沉积技术的氮化钽薄膜的制作工艺
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
CN106086809B (zh) * 2016-06-17 2018-08-17 艾因斯（北京）钽应用科技有限公司 一种制备耐腐耐磨钽复合涂层的方法
US10008558B1 (en) * 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000029636A2 (en) * 1998-11-12 2000-05-25 Applied Materials, Inc. High purity tantalum targets for sputtering
WO2002069380A2 (en) * 2001-02-23 2002-09-06 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US20040009307A1 (en) * 2000-06-08 2004-01-15 Won-Yong Koh Thin film forming method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
KR100386034B1 (ko) * 2000-12-06 2003-06-02 에이에스엠 마이크로케미스트리 리미티드 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
JP2004165634A (ja) * 2002-08-15 2004-06-10 Interuniv Micro Electronica Centrum Vzw Ａｌｄ表面処理のためのプラズマ処理
JP3935428B2 (ja) * 2002-12-27 2007-06-20 東京エレクトロン株式会社 成膜方法および成膜装置
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
JP4579157B2 (ja) * 2003-03-25 2010-11-10 東京エレクトロン株式会社 処理装置及び切り替え機構
JP2004311545A (ja) * 2003-04-03 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び高融点金属膜の堆積装置
US7186446B2 (en) * 2003-10-31 2007-03-06 International Business Machines Corporation Plasma enhanced ALD of tantalum nitride and bilayer
JP2005191290A (ja) * 2003-12-25 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
JP2006128542A (ja) * 2004-11-01 2006-05-18 Nec Electronics Corp 電子デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000029636A2 (en) * 1998-11-12 2000-05-25 Applied Materials, Inc. High purity tantalum targets for sputtering
US20040009307A1 (en) * 2000-06-08 2004-01-15 Won-Yong Koh Thin film forming method
WO2002069380A2 (en) * 2001-02-23 2002-09-06 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via

Also Published As

Publication number Publication date
EP1756856A4 (en) 2010-02-17
CN101036217A (zh) 2007-09-12
WO2005122253A3 (en) 2006-12-14
TWI345273B (en) 2011-07-11
EP1756856B1 (en) 2013-07-24
TW200540996A (en) 2005-12-16
WO2005122253A2 (en) 2005-12-22
JP4791456B2 (ja) 2011-10-12
EP1756856A2 (en) 2007-02-28
US7211507B2 (en) 2007-05-01
US20050269703A1 (en) 2005-12-08
JP2008502147A (ja) 2008-01-24

Similar Documents

Publication Publication Date Title
CN100447955C (zh) 在低热导率材料上沉积氮化钽扩散阻挡区域的方法
Heil et al. Low-temperature deposition of TiN by plasma-assisted atomic layer deposition
US6884466B2 (en) Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films
KR0184279B1 (ko) 금속 또는 금속실리사이드막의 형성방법
KR100387693B1 (ko) 매립배선형성방법
JP2017069313A (ja) 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
CN102851647A (zh) 沉积含金属膜于具有图案化构造的基板上的方法
KR20020040663A (ko) 불소 함유 공급원 전구체를 사용하여 형성시킨 탄탈 및탄탈계 피막 및 그 제조방법
Kovalgin et al. Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry
TWI450379B (zh) 層間絕緣膜及配線構造與此等之製造方法
Brady-Boyd et al. On the use of (3-trimethoxysilylpropyl) diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
Shin et al. Diffusion barrier property of TiN and TiN/Al/TiN films deposited with FMCVD for Cu interconnection in ULSI
US9916975B2 (en) Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use
Oh et al. Low‐Temperature Dual‐Material Area‐Selective Deposition: Molybdenum Hexafluoride‐Mediated SiO2 Fluorination/Passivation for Self‐Aligned Molybdenum/Metal Oxide Nanoribbons
US6479897B2 (en) Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same
KR19990072349A (ko) 금속-실리콘접촉장벽박막용의평탄한계면을제조하기위한방법
Chourasia et al. X‐Ray Photoemission Study of the Oxidation of Hafnium
US7179759B2 (en) Barrier layer and fabrication method thereof
TW201114942A (en) Film forming method and plasma film forming apparatus
TW200818394A (en) Method of fabricating semiconductor interconnections
US7527826B2 (en) Adhesion of a metal layer to a substrate by utilizing an organic acid material
KR100968312B1 (ko) 저-ｋ 물질 상의 ＴａＮ 확산장벽 영역의 ＰＥ-ＡＬＤ
Li et al. Characterization of WF 6/N 2/H 2 plasma enhanced chemical vapor deposited W x N films as barriers for Cu metallization
Hinz et al. Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
Otto et al. Investigation into the effect of a PECVD-deposited SiOx chamber coating on the selective, radical-based NF3 etching of TaN with respect to BEOL low-k

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20171127

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171127

Address after: American New York

Patentee after: Core USA second LLC

Address before: New York grams of Armand

Patentee before: International Business Machines Corp.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20081231