TWI345273B - Pe-ald of tan diffusion barrier re-gion on low-k materials - Google Patents

Pe-ald of tan diffusion barrier re-gion on low-k materials Download PDF

Info

Publication number
TWI345273B
TWI345273B TW094117722A TW94117722A TWI345273B TW I345273 B TWI345273 B TW I345273B TW 094117722 A TW094117722 A TW 094117722A TW 94117722 A TW94117722 A TW 94117722A TW I345273 B TWI345273 B TW I345273B
Authority
TW
Taiwan
Prior art keywords
low
protective layer
layer
plasma
button
Prior art date
Application number
TW094117722A
Other languages
English (en)
Chinese (zh)
Other versions
TW200540996A (en
Inventor
Derren N Dunn
Hyungjun Kim
Stephen M Rossnagel
Soon-Cheon Seo
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200540996A publication Critical patent/TW200540996A/zh
Application granted granted Critical
Publication of TWI345273B publication Critical patent/TWI345273B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094117722A 2004-06-02 2005-05-30 Pe-ald of tan diffusion barrier re-gion on low-k materials TWI345273B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/709,865 US7211507B2 (en) 2004-06-02 2004-06-02 PE-ALD of TaN diffusion barrier region on low-k materials

Publications (2)

Publication Number Publication Date
TW200540996A TW200540996A (en) 2005-12-16
TWI345273B true TWI345273B (en) 2011-07-11

Family

ID=35446788

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094117722A TWI345273B (en) 2004-06-02 2005-05-30 Pe-ald of tan diffusion barrier re-gion on low-k materials

Country Status (6)

Country Link
US (1) US7211507B2 (enExample)
EP (1) EP1756856B1 (enExample)
JP (1) JP4791456B2 (enExample)
CN (1) CN100447955C (enExample)
TW (1) TWI345273B (enExample)
WO (1) WO2005122253A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
KR100552820B1 (ko) * 2004-09-17 2006-02-21 동부아남반도체 주식회사 반도체 소자의 제조 방법
US7482289B2 (en) * 2006-08-25 2009-01-27 Battelle Memorial Institute Methods and apparatus for depositing tantalum metal films to surfaces and substrates
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
JP5358893B2 (ja) * 2007-04-03 2013-12-04 三菱電機株式会社 トランジスタ
DE602007013386D1 (de) * 2007-07-17 2011-05-05 St Microelectronics Srl Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement
JP5551681B2 (ja) * 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
US20100055442A1 (en) * 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
CN101740369B (zh) * 2008-11-19 2011-12-07 中国科学院微电子研究所 一种制备金属性金属氮化物薄膜的方法
US9177826B2 (en) * 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
US8962473B2 (en) 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
CN104109844B (zh) * 2013-04-18 2016-07-06 中芯国际集成电路制造(上海)有限公司 一种基于原子层沉积技术的氮化钽薄膜的制作工艺
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
CN106086809B (zh) * 2016-06-17 2018-08-17 艾因斯（北京）钽应用科技有限公司 一种制备耐腐耐磨钽复合涂层的方法
US10008558B1 (en) * 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2359825A (en) * 1998-11-12 2001-09-05 Applied Materials Inc Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
EP2293322A1 (en) * 2000-06-08 2011-03-09 Genitech, Inc. Method for forming a metal nitride layer
KR100386034B1 (ko) * 2000-12-06 2003-06-02 에이에스엠 마이크로케미스트리 리미티드 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법
US6428859B1 (en) * 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020117399A1 (en) * 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
JP2004165634A (ja) * 2002-08-15 2004-06-10 Interuniv Micro Electronica Centrum Vzw Ａｌｄ表面処理のためのプラズマ処理
JP3935428B2 (ja) * 2002-12-27 2007-06-20 東京エレクトロン株式会社 成膜方法および成膜装置
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
JP4579157B2 (ja) * 2003-03-25 2010-11-10 東京エレクトロン株式会社 処理装置及び切り替え機構
JP2004311545A (ja) * 2003-04-03 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び高融点金属膜の堆積装置
US7186446B2 (en) * 2003-10-31 2007-03-06 International Business Machines Corporation Plasma enhanced ALD of tantalum nitride and bilayer
JP2005191290A (ja) * 2003-12-25 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
JP2006128542A (ja) * 2004-11-01 2006-05-18 Nec Electronics Corp 電子デバイスの製造方法

Also Published As

Publication number Publication date
EP1756856A4 (en) 2010-02-17
CN101036217A (zh) 2007-09-12
WO2005122253A3 (en) 2006-12-14
CN100447955C (zh) 2008-12-31
EP1756856B1 (en) 2013-07-24
TW200540996A (en) 2005-12-16
WO2005122253A2 (en) 2005-12-22
JP4791456B2 (ja) 2011-10-12
EP1756856A2 (en) 2007-02-28
US7211507B2 (en) 2007-05-01
US20050269703A1 (en) 2005-12-08
JP2008502147A (ja) 2008-01-24

Similar Documents

Publication Publication Date Title
TWI345273B (en) Pe-ald of tan diffusion barrier re-gion on low-k materials
Kim et al. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
Heil et al. Low-temperature deposition of TiN by plasma-assisted atomic layer deposition
JP6793243B2 (ja) ＭｏＯＣｌ４を使用することによるＣＶＤ Ｍｏ堆積
Kim et al. High quality area-selective atomic layer deposition Co using ammonia gas as a reactant
Kim High-quality cobalt thin films by plasma-enhanced atomic layer deposition
Langereis et al. Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
Longrie et al. Plasma-enhanced ALD of platinum with O2, N2 and NH3 plasmas
Mane et al. Atomic layer deposition of W: Al2O3 nanocomposite films with tunable resistivity
Park et al. Chemical vapor deposition of HfO2 thin films using a novel carbon-free precursor: Characterization of the interface with the silicon substrate
Lu et al. Atomic layer deposition of NiO films on Si (100) using cyclopentadienyl-type compounds and ozone as precursors
Maeng et al. Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
Piallat et al. Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break
Kovalgin et al. Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry
Saare et al. Effect of reactant dosing on selectivity during area-selective deposition of TiO2 via integrated atomic layer deposition and atomic layer etching
Laube et al. Formation of size controlled silicon nanocrystals in nitrogen free silicon dioxide matrix prepared by plasma enhanced chemical vapor deposition
Antony Premkumar et al. NiO thin films synthesized by atomic layer deposition using Ni (dmamb) 2 and ozone as precursors
Klug et al. Atomic layer deposition of amorphous niobium carbide-based thin film superconductors
Törndahl et al. Growth of copper (I) nitride by ALD using copper (II) hexafluoroacetylacetonate, water, and ammonia as precursors
Kim et al. Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes
Knaut et al. In-situ real-time ellipsometric investigations during the atomic layer deposition of ruthenium: A process development from [(ethylcyclopentadienyl)(pyrrolyl) ruthenium] and molecular oxygen
Sasinska et al. Metallic Copper Thin Films Grown by Plasma‐Enhanced Atomic Layer Deposition of Air Stable Precursors
Kim et al. Formation of a Lead Zirconate Titanate (PZT)/Pt Interfacial Layer and Structural Changes in the Pt/Ti/SiO 2/Si Substrate during the Deposition of PZT Thin Film by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
US20220380893A1 (en) Copper halide layers
Thompson et al. Vapor phase deposition of copper films with a Cu (I) β-diketiminate precursor

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees