JP2008288560A5 - - Google Patents

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Publication number
JP2008288560A5
JP2008288560A5 JP2008060164A JP2008060164A JP2008288560A5 JP 2008288560 A5 JP2008288560 A5 JP 2008288560A5 JP 2008060164 A JP2008060164 A JP 2008060164A JP 2008060164 A JP2008060164 A JP 2008060164A JP 2008288560 A5 JP2008288560 A5 JP 2008288560A5
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JP
Japan
Prior art keywords
gate electrode
insulating film
forming
offset spacer
dummy gate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008060164A
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English (en)
Japanese (ja)
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JP5282419B2 (ja
JP2008288560A (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2008060164A external-priority patent/JP5282419B2/ja
Priority to JP2008060164A priority Critical patent/JP5282419B2/ja
Priority to TW097112894A priority patent/TWI446522B/zh
Priority to US12/101,568 priority patent/US8350335B2/en
Priority to KR1020080035540A priority patent/KR101457006B1/ko
Priority to CN2008102103134A priority patent/CN101335300B/zh
Publication of JP2008288560A publication Critical patent/JP2008288560A/ja
Publication of JP2008288560A5 publication Critical patent/JP2008288560A5/ja
Priority to US12/817,949 priority patent/US20100255650A1/en
Publication of JP5282419B2 publication Critical patent/JP5282419B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008060164A 2007-04-18 2008-03-10 半導体装置及びその製造方法 Expired - Fee Related JP5282419B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008060164A JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法
TW097112894A TWI446522B (zh) 2007-04-18 2008-04-09 半導體裝置及其製造方法
US12/101,568 US8350335B2 (en) 2007-04-18 2008-04-11 Semiconductor device including off-set spacers formed as a portion of the sidewall
KR1020080035540A KR101457006B1 (ko) 2007-04-18 2008-04-17 반도체 디바이스 및 그 제조 방법
CN2008102103134A CN101335300B (zh) 2007-04-18 2008-04-18 半导体装置及其制造方法
US12/817,949 US20100255650A1 (en) 2007-04-18 2010-06-17 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007108953 2007-04-18
JP2007108953 2007-04-18
JP2008060164A JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008288560A JP2008288560A (ja) 2008-11-27
JP2008288560A5 true JP2008288560A5 (zh) 2010-04-15
JP5282419B2 JP5282419B2 (ja) 2013-09-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008060164A Expired - Fee Related JP5282419B2 (ja) 2007-04-18 2008-03-10 半導体装置及びその製造方法

Country Status (4)

Country Link
JP (1) JP5282419B2 (zh)
KR (1) KR101457006B1 (zh)
CN (1) CN101335300B (zh)
TW (1) TWI446522B (zh)

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