JP2008277842A5 - - Google Patents
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- Publication number
- JP2008277842A5 JP2008277842A5 JP2008142645A JP2008142645A JP2008277842A5 JP 2008277842 A5 JP2008277842 A5 JP 2008277842A5 JP 2008142645 A JP2008142645 A JP 2008142645A JP 2008142645 A JP2008142645 A JP 2008142645A JP 2008277842 A5 JP2008277842 A5 JP 2008277842A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- gate driver
- segments
- source
- nmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/127989 | 2002-04-22 | ||
| US10/127,989 US6583663B1 (en) | 2002-04-22 | 2002-04-22 | Power integrated circuit with distributed gate driver |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004179763A Division JP2004260224A (ja) | 2002-04-22 | 2004-06-17 | 分散されたゲートドライバを備えた電源集積回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277842A JP2008277842A (ja) | 2008-11-13 |
| JP2008277842A5 true JP2008277842A5 (enExample) | 2009-07-02 |
| JP4917571B2 JP4917571B2 (ja) | 2012-04-18 |
Family
ID=22433025
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003115516A Pending JP2004007606A (ja) | 2002-04-22 | 2003-04-21 | 分散されたゲートドライバを備えた電源集積回路 |
| JP2004179763A Pending JP2004260224A (ja) | 2002-04-22 | 2004-06-17 | 分散されたゲートドライバを備えた電源集積回路 |
| JP2008142645A Expired - Fee Related JP4917571B2 (ja) | 2002-04-22 | 2008-05-30 | 分散されたゲートドライバを備えた電源集積回路及びmosトランジスタを駆動するための方法 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003115516A Pending JP2004007606A (ja) | 2002-04-22 | 2003-04-21 | 分散されたゲートドライバを備えた電源集積回路 |
| JP2004179763A Pending JP2004260224A (ja) | 2002-04-22 | 2004-06-17 | 分散されたゲートドライバを備えた電源集積回路 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6583663B1 (enExample) |
| EP (2) | EP1513197B1 (enExample) |
| JP (3) | JP2004007606A (enExample) |
| AT (2) | ATE457527T1 (enExample) |
| DE (2) | DE60331276D1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1307867B1 (en) * | 2000-07-26 | 2010-06-23 | Smiths Detection Inc. | Methods and systems for networked camera control |
| US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
| US6635544B2 (en) | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
| US7786533B2 (en) * | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
| US8093621B2 (en) | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
| US8653583B2 (en) | 2007-02-16 | 2014-02-18 | Power Integrations, Inc. | Sensing FET integrated with a high-voltage transistor |
| US7859037B2 (en) | 2007-02-16 | 2010-12-28 | Power Integrations, Inc. | Checkerboarded high-voltage vertical transistor layout |
| US7557406B2 (en) * | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
| JP5196222B2 (ja) * | 2007-05-28 | 2013-05-15 | 富士電機株式会社 | ゲート耐圧試験装置及び方法 |
| US7875962B2 (en) * | 2007-10-15 | 2011-01-25 | Power Integrations, Inc. | Package for a power semiconductor device |
| US7924065B2 (en) * | 2008-07-17 | 2011-04-12 | Continental Automotive Gmbh | Control circuit for a power field-effect transistor and method for configuring a control circuit for a power field-effect transistor |
| US7964912B2 (en) | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
| US7871882B2 (en) | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
| US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
| EP2256852A1 (fr) * | 2009-05-27 | 2010-12-01 | Belenos Clean Power Holding AG | Système de dérivation des cellules d'une pile à combustible |
| US8207455B2 (en) * | 2009-07-31 | 2012-06-26 | Power Integrations, Inc. | Power semiconductor package with bottom surface protrusions |
| US8115457B2 (en) * | 2009-07-31 | 2012-02-14 | Power Integrations, Inc. | Method and apparatus for implementing a power converter input terminal voltage discharge circuit |
| US8207577B2 (en) * | 2009-09-29 | 2012-06-26 | Power Integrations, Inc. | High-voltage transistor structure with reduced gate capacitance |
| US7893754B1 (en) | 2009-10-02 | 2011-02-22 | Power Integrations, Inc. | Temperature independent reference circuit |
| US8634218B2 (en) | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
| US8310845B2 (en) * | 2010-02-10 | 2012-11-13 | Power Integrations, Inc. | Power supply circuit with a control terminal for different functional modes of operation |
| US8653600B2 (en) | 2012-06-01 | 2014-02-18 | Power Integrations, Inc. | High-voltage monolithic schottky device structure |
| EP2738809A3 (en) * | 2012-11-30 | 2017-05-10 | Enpirion, Inc. | Semiconductor device including gate drivers around a periphery thereof |
| US9978862B2 (en) * | 2013-04-30 | 2018-05-22 | Infineon Technologies Austria Ag | Power transistor with at least partially integrated driver stage |
| US9799643B2 (en) | 2013-05-23 | 2017-10-24 | Infineon Technologies Austria Ag | Gate voltage control for III-nitride transistors |
| US9455621B2 (en) | 2013-08-28 | 2016-09-27 | Power Integrations, Inc. | Controller IC with zero-crossing detector and capacitor discharge switching element |
| US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
| US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
| US9530765B1 (en) | 2015-04-30 | 2016-12-27 | Silanna Asia Pte Ltd | Distributing capacitance with gate driver for power switch |
| US9667154B2 (en) | 2015-09-18 | 2017-05-30 | Power Integrations, Inc. | Demand-controlled, low standby power linear shunt regulator |
| US9973183B2 (en) * | 2015-09-28 | 2018-05-15 | Power Integrations, Inc. | Field-effect transistor device with partial finger current sensing FETs |
| US20170093282A1 (en) * | 2015-09-30 | 2017-03-30 | The Silanna Group Pty Ltd. | Power Converter with Low Threshold Voltage Transistor |
| US9602009B1 (en) | 2015-12-08 | 2017-03-21 | Power Integrations, Inc. | Low voltage, closed loop controlled energy storage circuit |
| US9629218B1 (en) | 2015-12-28 | 2017-04-18 | Power Integrations, Inc. | Thermal protection for LED bleeder in fault condition |
| WO2020242440A1 (en) | 2019-05-24 | 2020-12-03 | Power Integrations, Inc. | Switching delay for communication |
| US11898987B2 (en) * | 2020-09-10 | 2024-02-13 | Raytheon Company | SAW-based hydrogel testing for detecting viruses or other antigens |
| US11437911B2 (en) | 2020-12-22 | 2022-09-06 | Power Integrations, Inc. | Variable drive strength in response to a power converter operating condition |
| US11979090B2 (en) | 2021-08-12 | 2024-05-07 | Power Integrations, Inc. | Power converter controller with branch switch |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1215230B (it) * | 1985-01-08 | 1990-01-31 | Ates Componenti Elettron | Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria |
| US5023678A (en) * | 1987-05-27 | 1991-06-11 | International Rectifier Corporation | High power MOSFET and integrated control circuit therefor for high-side switch application |
| JP2619466B2 (ja) * | 1988-03-18 | 1997-06-11 | 株式会社日立製作所 | 半導体装置、半導体装置の設計支援システム及び半導体装置を用いた電源システム |
| US4949139A (en) * | 1988-09-09 | 1990-08-14 | Atmel Corporation | Transistor construction for low noise output driver |
| IT1231052B (it) | 1989-09-27 | 1991-11-12 | Bull Hn Information Syst | Alimentatore a commutazione con piu' uscite, regolazione di una tensione di uscita e compensazione di carico. |
| JP3071915B2 (ja) * | 1991-12-20 | 2000-07-31 | 株式会社東芝 | 出力回路 |
| JP3205099B2 (ja) * | 1992-12-25 | 2001-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
| US5334885A (en) * | 1993-01-13 | 1994-08-02 | At&T Bell Laboratories | Automatic control of buffer speed |
| JP3173268B2 (ja) * | 1994-01-06 | 2001-06-04 | 富士電機株式会社 | Mis電界効果トランジスタを備えた半導体装置 |
| US5728594A (en) * | 1994-11-02 | 1998-03-17 | Texas Instruments Incorporated | Method of making a multiple transistor integrated circuit with thick copper interconnect |
| US5610503A (en) * | 1995-05-10 | 1997-03-11 | Celestica, Inc. | Low voltage DC-to-DC power converter integrated circuit and related methods |
| JPH08321604A (ja) * | 1995-05-25 | 1996-12-03 | Toshiba Corp | 半導体装置の製造方法 |
| JPH0927554A (ja) * | 1995-07-12 | 1997-01-28 | Sanyo Electric Co Ltd | 半導体電子回路 |
| JP3698828B2 (ja) * | 1996-08-29 | 2005-09-21 | 富士通株式会社 | 信号伝送システム、半導体装置モジュール、入力バッファ回路、及び半導体装置 |
| JP3269475B2 (ja) * | 1998-02-16 | 2002-03-25 | 日本電気株式会社 | 半導体装置 |
| JP3517154B2 (ja) | 1998-04-30 | 2004-04-05 | 株式会社東芝 | 誘電体分離集積回路 |
| JP2000332191A (ja) * | 1999-05-17 | 2000-11-30 | Toshiba Corp | ハイブリッド型半導体装置 |
| JP3384386B2 (ja) * | 1999-07-07 | 2003-03-10 | セイコーエプソン株式会社 | 半導体装置 |
| US6313672B1 (en) | 1999-12-15 | 2001-11-06 | Exar Corporation | Over-voltage tolerant integrated circuit I/O buffer |
| US6313671B1 (en) | 1999-12-15 | 2001-11-06 | Exar Corporation | Low-power integrated circuit I/O buffer |
| JP2001352047A (ja) * | 2000-06-05 | 2001-12-21 | Oki Micro Design Co Ltd | 半導体集積回路 |
| US20020071293A1 (en) * | 2000-07-13 | 2002-06-13 | Eden Richard C. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor |
| JP3482948B2 (ja) * | 2000-07-25 | 2004-01-06 | 株式会社デンソー | 半導体装置 |
| JP3647728B2 (ja) * | 2000-08-01 | 2005-05-18 | 松下電器産業株式会社 | スイッチング電源装置及びスイッチング電源用半導体装置 |
| US6362608B1 (en) * | 2001-02-01 | 2002-03-26 | Maxim Integrated Products, Inc. | Multi-phase switching converters and methods |
-
2002
- 2002-04-22 US US10/127,989 patent/US6583663B1/en not_active Expired - Fee Related
-
2003
- 2003-04-09 US US10/410,725 patent/US6680646B2/en not_active Expired - Fee Related
- 2003-04-21 JP JP2003115516A patent/JP2004007606A/ja active Pending
- 2003-04-22 EP EP04029126A patent/EP1513197B1/en not_active Expired - Lifetime
- 2003-04-22 DE DE60331276T patent/DE60331276D1/de not_active Expired - Lifetime
- 2003-04-22 EP EP03252522A patent/EP1357601B1/en not_active Expired - Lifetime
- 2003-04-22 DE DE60331221T patent/DE60331221D1/de not_active Expired - Lifetime
- 2003-04-22 AT AT04029126T patent/ATE457527T1/de not_active IP Right Cessation
- 2003-04-22 AT AT03252522T patent/ATE458277T1/de not_active IP Right Cessation
-
2004
- 2004-06-17 JP JP2004179763A patent/JP2004260224A/ja active Pending
-
2008
- 2008-05-30 JP JP2008142645A patent/JP4917571B2/ja not_active Expired - Fee Related
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