JP2006303753A5 - - Google Patents

Download PDF

Info

Publication number
JP2006303753A5
JP2006303753A5 JP2005120605A JP2005120605A JP2006303753A5 JP 2006303753 A5 JP2006303753 A5 JP 2006303753A5 JP 2005120605 A JP2005120605 A JP 2005120605A JP 2005120605 A JP2005120605 A JP 2005120605A JP 2006303753 A5 JP2006303753 A5 JP 2006303753A5
Authority
JP
Japan
Prior art keywords
voltage
signal
transistors
type transistor
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005120605A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006303753A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005120605A priority Critical patent/JP2006303753A/ja
Priority claimed from JP2005120605A external-priority patent/JP2006303753A/ja
Priority to KR1020060034915A priority patent/KR20060110220A/ko
Priority to US11/405,541 priority patent/US7532054B2/en
Priority to TW095113955A priority patent/TWI423395B/zh
Priority to CN200610066681.7A priority patent/CN1855725B/zh
Priority to CN201510973927.8A priority patent/CN105577145B/zh
Publication of JP2006303753A publication Critical patent/JP2006303753A/ja
Publication of JP2006303753A5 publication Critical patent/JP2006303753A5/ja
Priority to US12/422,712 priority patent/US7855590B2/en
Priority to US12/944,898 priority patent/US8013656B2/en
Pending legal-status Critical Current

Links

JP2005120605A 2005-04-19 2005-04-19 半導体集積回路装置 Pending JP2006303753A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2005120605A JP2006303753A (ja) 2005-04-19 2005-04-19 半導体集積回路装置
KR1020060034915A KR20060110220A (ko) 2005-04-19 2006-04-18 반도체집적회로장치
US11/405,541 US7532054B2 (en) 2005-04-19 2006-04-18 Semiconductor integrated circuit device having I/O circuitry for low voltage operation
CN201510973927.8A CN105577145B (zh) 2005-04-19 2006-04-19 半导体集成电路器件
CN200610066681.7A CN1855725B (zh) 2005-04-19 2006-04-19 半导体集成电路器件
TW095113955A TWI423395B (zh) 2005-04-19 2006-04-19 Semiconductor integrated circuit device
US12/422,712 US7855590B2 (en) 2005-04-19 2009-04-13 Semiconductor integrated circuit device
US12/944,898 US8013656B2 (en) 2005-04-19 2010-11-12 Semicondutor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005120605A JP2006303753A (ja) 2005-04-19 2005-04-19 半導体集積回路装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010198533A Division JP5085701B2 (ja) 2010-09-06 2010-09-06 半導体集積回路装置
JP2011161159A Division JP5227446B2 (ja) 2011-07-22 2011-07-22 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2006303753A JP2006303753A (ja) 2006-11-02
JP2006303753A5 true JP2006303753A5 (enExample) 2008-02-14

Family

ID=37107909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005120605A Pending JP2006303753A (ja) 2005-04-19 2005-04-19 半導体集積回路装置

Country Status (5)

Country Link
US (3) US7532054B2 (enExample)
JP (1) JP2006303753A (enExample)
KR (1) KR20060110220A (enExample)
CN (2) CN105577145B (enExample)
TW (1) TWI423395B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3796034B2 (ja) * 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
JP2006303753A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体集積回路装置
JP4846272B2 (ja) 2005-06-07 2011-12-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置
TW200820571A (en) * 2006-10-27 2008-05-01 Fitipower Integrated Tech Inc Driving device
ITMI20062237A1 (it) * 2006-11-22 2008-05-23 St Microelectronics Srl Circuito elettrico con protezione dalle sovratensioni
JP5172233B2 (ja) * 2007-07-27 2013-03-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US20090160485A1 (en) * 2007-12-19 2009-06-25 Texas Instruments Incorporated Providing Higher-Swing Output Signals When Components Of An Integrated Circuit Are Fabricated Using A Lower-Voltage Process
US20090179247A1 (en) * 2008-01-16 2009-07-16 Renesas Technology Corp. Semiconductor device
JP5259246B2 (ja) 2008-05-09 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP5816407B2 (ja) 2009-02-27 2015-11-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
EP2278712A1 (fr) * 2009-07-01 2011-01-26 STMicroelectronics (Rousset) SAS Circuit intégré comprenant un circuit tampon haute tension large bande
US8018251B1 (en) * 2010-06-01 2011-09-13 Pmc-Sierra, Inc. Input/output interfacing with low power
JP5618772B2 (ja) * 2010-11-11 2014-11-05 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
JP2012234601A (ja) * 2011-05-06 2012-11-29 Toshiba Corp 不揮発性半導体メモリ
JP5917858B2 (ja) * 2011-08-29 2016-05-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8704579B2 (en) * 2011-12-30 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Level shifting circuit and semiconductor device using the same
US9571092B2 (en) * 2012-02-03 2017-02-14 Longitude Semiconductor S.A.R.L. Cascaded high voltage switch architecture
WO2014038115A1 (ja) * 2012-09-06 2014-03-13 パナソニック株式会社 半導体集積回路
US8791743B1 (en) * 2013-02-18 2014-07-29 Apple Inc. Balanced level shifter with wide operation range
US9488996B2 (en) * 2014-05-29 2016-11-08 Qualcomm Incorporated Bias techniques and circuit arrangements to reduce leakage current in a circuit
JP2016116220A (ja) * 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6983905B2 (ja) * 2017-11-14 2021-12-17 ルネサスエレクトロニクス株式会社 半導体装置
US10418356B2 (en) * 2017-12-21 2019-09-17 Nanya Technology Corporation Diode structure and electrostatic discharge protection device including the same
CN112868171B (zh) * 2018-12-14 2022-09-02 华为数字能源技术有限公司 共享自举电容器系统和方法
US20200194459A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
DE102020112203B4 (de) 2020-03-13 2024-08-08 Taiwan Semiconductor Manufacturing Co. Ltd. Integrierte schaltung und verfahren zum einbetten planarer fets mit finfets
US11355493B2 (en) 2020-03-13 2022-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method to embed planar FETs with finFETs
JP7626368B2 (ja) 2020-12-23 2025-02-07 株式会社デンソー 半導体集積回路
CN113467565B (zh) * 2021-07-08 2025-05-30 海宁奕斯伟计算技术有限公司 驱动系统、驱动方法、计算机系统和可读介质
CN117318697B (zh) * 2023-09-15 2024-06-14 辰芯半导体（深圳）有限公司 电平移位电路和电源设备

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3534396B2 (ja) * 1990-03-28 2004-06-07 株式会社ルネサステクノロジ 半導体装置
JP3542675B2 (ja) * 1995-07-24 2004-07-14 株式会社ルネサステクノロジ 半導体記憶装置
US5969542A (en) * 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
US6147540A (en) * 1998-08-31 2000-11-14 Motorola Inc. High voltage input buffer made by a low voltage process and having a self-adjusting trigger point
AU2319600A (en) * 2000-01-27 2001-08-07 Hitachi Limited Semiconductor device
JP3579633B2 (ja) * 2000-05-19 2004-10-20 株式会社ルネサステクノロジ 半導体集積回路
JP2002094364A (ja) * 2000-09-19 2002-03-29 Toshiba Tec Corp 容量性素子の駆動方法及び駆動装置
JP3717781B2 (ja) * 2000-10-30 2005-11-16 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路
US6556061B1 (en) * 2001-02-20 2003-04-29 Taiwan Semiconductor Manufacturing Company Level shifter with zero threshold device for ultra-deep submicron CMOS designs
US6512407B2 (en) * 2001-04-05 2003-01-28 Parthus Ireland Limited Method and apparatus for level shifting approach with symmetrical resulting waveform
JP3717109B2 (ja) * 2001-05-16 2005-11-16 日本電信電話株式会社 半導体出力回路
JP4327411B2 (ja) * 2001-08-31 2009-09-09 株式会社ルネサステクノロジ 半導体装置
JP3866111B2 (ja) * 2002-01-18 2007-01-10 株式会社ルネサステクノロジ 半導体集積回路及びバーンイン方法
CN1233093C (zh) * 2002-02-20 2005-12-21 松下电器产业株式会社 驱动电路
US6882224B1 (en) * 2003-04-03 2005-04-19 Xilinx, Inc. Self-biasing for common gate amplifier
JP4231352B2 (ja) * 2003-07-04 2009-02-25 東芝テック株式会社 インクジェットヘッド駆動装置の電圧供給装置
US20050134355A1 (en) * 2003-12-18 2005-06-23 Masato Maede Level shift circuit
US7205820B1 (en) * 2004-07-08 2007-04-17 Pmc-Sierra, Inc. Systems and methods for translation of signal levels across voltage domains
US7151400B2 (en) * 2004-07-13 2006-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Boost-biased level shifter
JP2006303753A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体集積回路装置

Similar Documents

Publication Publication Date Title
JP2006303753A5 (enExample)
JP5048081B2 (ja) バッファおよび表示装置
CN102195637B (zh) 传输门电路及半导体装置
TW201106126A (en) Reference voltage circuit and electronic device
Larsen et al. High-voltage pulse-triggered SR latch level-shifter design considerations
US9024674B1 (en) Negative level shifter
US8648849B2 (en) Buffer circuit
KR970067344A (ko) 레벨 변환 회로 및 반도체 집적회로
CN105703761B (zh) 输入/输出驱动电路
WO2019033340A1 (zh) 一种可输出正负电压的电平转换器
US9263949B2 (en) Voltage conversion circuit and electronic circuit
US20090261867A1 (en) Semiconductor device having voltage output circuit
JP2011061620A (ja) 半導体装置及びレベルシフト回路
CN103944556A (zh) 电平转移电路
JP4114751B2 (ja) 半導体装置
CN108781071B (zh) 方波产生方法及方波产生电路
JP6802497B2 (ja) 入力回路
US20090284287A1 (en) Output buffer circuit and integrated circuit
TWI519064B (zh) 緩衝電路
US8723581B1 (en) Input buffers
US7795923B1 (en) Logic circuit
JP2008109110A5 (enExample)
CN204103893U (zh) 一种电平转换电路
JP3997973B2 (ja) 半導体集積回路装置及びメモリにおけるセンスアンプ
TWI485542B (zh) 電源供應電路和電源供應方法