JP2011509528A5 - - Google Patents

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Publication number
JP2011509528A5
JP2011509528A5 JP2010542235A JP2010542235A JP2011509528A5 JP 2011509528 A5 JP2011509528 A5 JP 2011509528A5 JP 2010542235 A JP2010542235 A JP 2010542235A JP 2010542235 A JP2010542235 A JP 2010542235A JP 2011509528 A5 JP2011509528 A5 JP 2011509528A5
Authority
JP
Japan
Prior art keywords
migfit
gate terminal
gate
output
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010542235A
Other languages
English (en)
Japanese (ja)
Other versions
JP5418790B2 (ja
JP2011509528A (ja
Filing date
Publication date
Priority claimed from US11/971,591 external-priority patent/US7817387B2/en
Application filed filed Critical
Publication of JP2011509528A publication Critical patent/JP2011509528A/ja
Publication of JP2011509528A5 publication Critical patent/JP2011509528A5/ja
Application granted granted Critical
Publication of JP5418790B2 publication Critical patent/JP5418790B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010542235A 2008-01-09 2008-12-10 Ｅｓｄ保護を有するｍｉｇｆｅｔ回路 Expired - Fee Related JP5418790B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/971,591 2008-01-09
US11/971,591 US7817387B2 (en) 2008-01-09 2008-01-09 MIGFET circuit with ESD protection
PCT/US2008/086180 WO2009088622A1 (en) 2008-01-09 2008-12-10 Migfet circuit with esd protection

Publications (3)

Publication Number Publication Date
JP2011509528A JP2011509528A (ja) 2011-03-24
JP2011509528A5 true JP2011509528A5 (enExample) 2012-02-02
JP5418790B2 JP5418790B2 (ja) 2014-02-19

Family

ID=40844358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010542235A Expired - Fee Related JP5418790B2 (ja) 2008-01-09 2008-12-10 Ｅｓｄ保護を有するｍｉｇｆｅｔ回路

Country Status (5)

Country Link
US (1) US7817387B2 (enExample)
JP (1) JP5418790B2 (enExample)
KR (1) KR101581969B1 (enExample)
TW (1) TW200945553A (enExample)
WO (1) WO2009088622A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8179952B2 (en) * 2008-05-23 2012-05-15 Integrated Device Technology Inc. Programmable duty cycle distortion generation circuit
US8194721B2 (en) * 2008-05-23 2012-06-05 Integrated Device Technology, Inc Signal amplitude distortion within an integrated circuit
US8149553B2 (en) * 2008-05-23 2012-04-03 Integrated Device Technology, Inc Electrostatic discharge event protection for an integrated circuit
US8259888B2 (en) * 2008-05-23 2012-09-04 Integrated Device Technology, Inc. Method of processing signal data with corrected clock phase offset
FR2956246B1 (fr) * 2010-02-08 2013-11-01 St Microelectronics Rousset Circuit integre muni d'une protection contre des decharges electrostatiques
US8604548B2 (en) 2011-11-23 2013-12-10 United Microelectronics Corp. Semiconductor device having ESD device
US10332871B2 (en) * 2016-03-18 2019-06-25 Intel IP Corporation Area-efficient and robust electrostatic discharge circuit

Family Cites Families (32)

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Publication number Priority date Publication date Assignee Title
US544062A (en) * 1895-08-06 Bandage
JPS577969A (en) 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
JPH02113623A (ja) 1988-10-21 1990-04-25 Sharp Corp 集積回路の静電気保護回路
EP0435047A3 (en) 1989-12-19 1992-07-15 National Semiconductor Corporation Electrostatic discharge protection for integrated circuits
US5237395A (en) 1991-05-28 1993-08-17 Western Digital Corporation Power rail ESD protection circuit
US5255146A (en) 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5287241A (en) 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection
JP2589938B2 (ja) 1993-10-04 1997-03-12 日本モトローラ株式会社 半導体集積回路装置の静電破壊保護回路
US5361185A (en) 1993-02-19 1994-11-01 Advanced Micro Devices, Inc. Distributed VCC/VSS ESD clamp structure
US5311391A (en) 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
US5440162A (en) 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5610790A (en) 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5559659A (en) 1995-03-23 1996-09-24 Lucent Technologies Inc. Enhanced RC coupled electrostatic discharge protection
EP0740344B1 (en) 1995-04-24 2002-07-24 Conexant Systems, Inc. Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp
US5946177A (en) 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
DE69920891D1 (de) * 1999-07-05 2004-11-11 St Microelectronics Srl CMOS-Synchrongleichrichter für Aufwärtswandler
US6287244B1 (en) * 2000-02-17 2001-09-11 John L. Boos Method for obviating knee joint injury
US6385021B1 (en) 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
JP3800501B2 (ja) * 2001-02-15 2006-07-26 株式会社日立製作所 半導体装置
JP2004523130A (ja) * 2001-07-05 2004-07-29 サーノフ コーポレイション マルチフィンガ・ターンオンのための同時及び分散自己バイアス法を用いた静電放電（ｅｓｄ）保護デバイス
US20030151077A1 (en) 2002-02-13 2003-08-14 Leo Mathew Method of forming a vertical double gate semiconductor device and structure thereof
US6724603B2 (en) 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7209332B2 (en) * 2002-12-10 2007-04-24 Freescale Semiconductor, Inc. Transient detection circuit
US6879476B2 (en) 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6838322B2 (en) 2003-05-01 2005-01-04 Freescale Semiconductor, Inc. Method for forming a double-gated semiconductor device
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
JP4429798B2 (ja) * 2004-05-12 2010-03-10 富士通マイクロエレクトロニクス株式会社 フィン型チャネルｆｅｔを用いたシステムｌｓｉ及びその製造方法
US7244640B2 (en) 2004-10-19 2007-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a body contact in a Finfet structure and a device including the same
US7301741B2 (en) 2005-05-17 2007-11-27 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
DE102005022763B4 (de) 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
JP2007053316A (ja) 2005-08-19 2007-03-01 Toshiba Corp Ｅｓｄ保護素子
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis

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