TW200945553A - MIGFET circuit with ESD protection - Google Patents

MIGFET circuit with ESD protection Download PDF

Info

Publication number
TW200945553A
TW200945553A TW098100226A TW98100226A TW200945553A TW 200945553 A TW200945553 A TW 200945553A TW 098100226 A TW098100226 A TW 098100226A TW 98100226 A TW98100226 A TW 98100226A TW 200945553 A TW200945553 A TW 200945553A
Authority
TW
Taiwan
Prior art keywords
gate
migfet
circuit
bias
esd
Prior art date
Application number
TW098100226A
Other languages
English (en)
Chinese (zh)
Inventor
Michael G Khazhinsky
Leo Mathew
James W Miller
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200945553A publication Critical patent/TW200945553A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW098100226A 2008-01-09 2009-01-06 MIGFET circuit with ESD protection TW200945553A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/971,591 US7817387B2 (en) 2008-01-09 2008-01-09 MIGFET circuit with ESD protection

Publications (1)

Publication Number Publication Date
TW200945553A true TW200945553A (en) 2009-11-01

Family

ID=40844358

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098100226A TW200945553A (en) 2008-01-09 2009-01-06 MIGFET circuit with ESD protection

Country Status (5)

Country Link
US (1) US7817387B2 (enExample)
JP (1) JP5418790B2 (enExample)
KR (1) KR101581969B1 (enExample)
TW (1) TW200945553A (enExample)
WO (1) WO2009088622A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8259888B2 (en) * 2008-05-23 2012-09-04 Integrated Device Technology, Inc. Method of processing signal data with corrected clock phase offset
US8149553B2 (en) * 2008-05-23 2012-04-03 Integrated Device Technology, Inc Electrostatic discharge event protection for an integrated circuit
US8179952B2 (en) * 2008-05-23 2012-05-15 Integrated Device Technology Inc. Programmable duty cycle distortion generation circuit
US8194721B2 (en) * 2008-05-23 2012-06-05 Integrated Device Technology, Inc Signal amplitude distortion within an integrated circuit
FR2956246B1 (fr) * 2010-02-08 2013-11-01 St Microelectronics Rousset Circuit integre muni d'une protection contre des decharges electrostatiques
US8604548B2 (en) 2011-11-23 2013-12-10 United Microelectronics Corp. Semiconductor device having ESD device
US10332871B2 (en) * 2016-03-18 2019-06-25 Intel IP Corporation Area-efficient and robust electrostatic discharge circuit

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US544062A (en) * 1895-08-06 Bandage
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EP0435047A3 (en) * 1989-12-19 1992-07-15 National Semiconductor Corporation Electrostatic discharge protection for integrated circuits
US5237395A (en) * 1991-05-28 1993-08-17 Western Digital Corporation Power rail ESD protection circuit
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5287241A (en) 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection
JP2589938B2 (ja) 1993-10-04 1997-03-12 日本モトローラ株式会社 半導体集積回路装置の静電破壊保護回路
US5361185A (en) * 1993-02-19 1994-11-01 Advanced Micro Devices, Inc. Distributed VCC/VSS ESD clamp structure
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
US5440162A (en) 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5559659A (en) * 1995-03-23 1996-09-24 Lucent Technologies Inc. Enhanced RC coupled electrostatic discharge protection
DE69622465T2 (de) * 1995-04-24 2003-05-08 Conexant Systems, Inc. Verfahren und Apparat zum Koppeln verschiedener, unabhängiger on-Chip-Vdd-Busse an eine ESD-Klemme
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
DE69920891D1 (de) * 1999-07-05 2004-11-11 St Microelectronics Srl CMOS-Synchrongleichrichter für Aufwärtswandler
US6287244B1 (en) * 2000-02-17 2001-09-11 John L. Boos Method for obviating knee joint injury
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
JP3800501B2 (ja) * 2001-02-15 2006-07-26 株式会社日立製作所 半導体装置
KR20040041149A (ko) * 2001-07-05 2004-05-14 사르노프 코포레이션 멀티 핑거 턴온을 위해 동시에 분배되는 셀프-바이어싱을갖는 정전기 방전（ｅｓｄ）보호 장치
US20030151077A1 (en) * 2002-02-13 2003-08-14 Leo Mathew Method of forming a vertical double gate semiconductor device and structure thereof
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7209332B2 (en) * 2002-12-10 2007-04-24 Freescale Semiconductor, Inc. Transient detection circuit
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6838322B2 (en) * 2003-05-01 2005-01-04 Freescale Semiconductor, Inc. Method for forming a double-gated semiconductor device
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
JP4429798B2 (ja) * 2004-05-12 2010-03-10 富士通マイクロエレクトロニクス株式会社 フィン型チャネルｆｅｔを用いたシステムｌｓｉ及びその製造方法
US7244640B2 (en) * 2004-10-19 2007-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a body contact in a Finfet structure and a device including the same
US7301741B2 (en) * 2005-05-17 2007-11-27 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
JP2007053316A (ja) 2005-08-19 2007-03-01 Toshiba Corp Ｅｓｄ保護素子

Also Published As

Publication number Publication date
JP2011509528A (ja) 2011-03-24
US7817387B2 (en) 2010-10-19
KR101581969B1 (ko) 2015-12-31
WO2009088622A1 (en) 2009-07-16
US20090174973A1 (en) 2009-07-09
JP5418790B2 (ja) 2014-02-19
KR20100098680A (ko) 2010-09-08

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