KR101581969B1 - Ｍｉｇｆｅｔ을 구비한 ｅｓｄ 보호된 회로 및 ｅｓｄ 보호된 회로에서의 방법 - Google Patents

Ｍｉｇｆｅｔ을 구비한 ｅｓｄ 보호된 회로 및 ｅｓｄ 보호된 회로에서의 방법 Download PDF

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KR101581969B1
KR101581969B1 KR1020107015023A KR20107015023A KR101581969B1 KR 101581969 B1 KR101581969 B1 KR 101581969B1 KR 1020107015023 A KR1020107015023 A KR 1020107015023A KR 20107015023 A KR20107015023 A KR 20107015023A KR 101581969 B1 KR101581969 B1 KR 101581969B1
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South Korea
Prior art keywords
migfet
gate
circuit
gate terminal
bias
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Korean (ko)
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KR20100098680A (ko
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마이클 지. 카진스키
레오 매튜
제임스 더블유. 밀러
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020107015023A 2008-01-09 2008-12-10 Ｍｉｇｆｅｔ을 구비한 ｅｓｄ 보호된 회로 및 ｅｓｄ 보호된 회로에서의 방법 Expired - Fee Related KR101581969B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/971,591 2008-01-09
US11/971,591 US7817387B2 (en) 2008-01-09 2008-01-09 MIGFET circuit with ESD protection

Publications (2)

Publication Number Publication Date
KR20100098680A KR20100098680A (ko) 2010-09-08
KR101581969B1 true KR101581969B1 (ko) 2015-12-31

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KR1020107015023A Expired - Fee Related KR101581969B1 (ko) 2008-01-09 2008-12-10 Ｍｉｇｆｅｔ을 구비한 ｅｓｄ 보호된 회로 및 ｅｓｄ 보호된 회로에서의 방법

Country Status (5)

Country Link
US (1) US7817387B2 (enExample)
JP (1) JP5418790B2 (enExample)
KR (1) KR101581969B1 (enExample)
TW (1) TW200945553A (enExample)
WO (1) WO2009088622A1 (enExample)

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US8259888B2 (en) * 2008-05-23 2012-09-04 Integrated Device Technology, Inc. Method of processing signal data with corrected clock phase offset
US8149553B2 (en) * 2008-05-23 2012-04-03 Integrated Device Technology, Inc Electrostatic discharge event protection for an integrated circuit
US8179952B2 (en) * 2008-05-23 2012-05-15 Integrated Device Technology Inc. Programmable duty cycle distortion generation circuit
US8194721B2 (en) * 2008-05-23 2012-06-05 Integrated Device Technology, Inc Signal amplitude distortion within an integrated circuit
FR2956246B1 (fr) * 2010-02-08 2013-11-01 St Microelectronics Rousset Circuit integre muni d'une protection contre des decharges electrostatiques
US8604548B2 (en) 2011-11-23 2013-12-10 United Microelectronics Corp. Semiconductor device having ESD device
US10332871B2 (en) * 2016-03-18 2019-06-25 Intel IP Corporation Area-efficient and robust electrostatic discharge circuit

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US20060262469A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
US20070025034A1 (en) * 2005-05-18 2007-02-01 Nimal Chaudhary Electronic circuit, electronic circuit arrangement and method for producing an electronic circuit

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JPH02113623A (ja) * 1988-10-21 1990-04-25 Sharp Corp 集積回路の静電気保護回路
EP0435047A3 (en) * 1989-12-19 1992-07-15 National Semiconductor Corporation Electrostatic discharge protection for integrated circuits
US5237395A (en) * 1991-05-28 1993-08-17 Western Digital Corporation Power rail ESD protection circuit
US5255146A (en) * 1991-08-29 1993-10-19 National Semiconductor Corporation Electrostatic discharge detection and clamp control circuit
US5287241A (en) 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection
JP2589938B2 (ja) 1993-10-04 1997-03-12 日本モトローラ株式会社 半導体集積回路装置の静電破壊保護回路
US5361185A (en) * 1993-02-19 1994-11-01 Advanced Micro Devices, Inc. Distributed VCC/VSS ESD clamp structure
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
US5440162A (en) 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5559659A (en) * 1995-03-23 1996-09-24 Lucent Technologies Inc. Enhanced RC coupled electrostatic discharge protection
DE69622465T2 (de) * 1995-04-24 2003-05-08 Conexant Systems, Inc. Verfahren und Apparat zum Koppeln verschiedener, unabhängiger on-Chip-Vdd-Busse an eine ESD-Klemme
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
DE69920891D1 (de) * 1999-07-05 2004-11-11 St Microelectronics Srl CMOS-Synchrongleichrichter für Aufwärtswandler
US6287244B1 (en) * 2000-02-17 2001-09-11 John L. Boos Method for obviating knee joint injury
US6385021B1 (en) * 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
JP3800501B2 (ja) * 2001-02-15 2006-07-26 株式会社日立製作所 半導体装置
KR20040041149A (ko) * 2001-07-05 2004-05-14 사르노프 코포레이션 멀티 핑거 턴온을 위해 동시에 분배되는 셀프-바이어싱을갖는 정전기 방전（ｅｓｄ）보호 장치
US20030151077A1 (en) * 2002-02-13 2003-08-14 Leo Mathew Method of forming a vertical double gate semiconductor device and structure thereof
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7209332B2 (en) * 2002-12-10 2007-04-24 Freescale Semiconductor, Inc. Transient detection circuit
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
US6838322B2 (en) * 2003-05-01 2005-01-04 Freescale Semiconductor, Inc. Method for forming a double-gated semiconductor device
US7098502B2 (en) * 2003-11-10 2006-08-29 Freescale Semiconductor, Inc. Transistor having three electrically isolated electrodes and method of formation
JP4429798B2 (ja) * 2004-05-12 2010-03-10 富士通マイクロエレクトロニクス株式会社 フィン型チャネルｆｅｔを用いたシステムｌｓｉ及びその製造方法
US7244640B2 (en) * 2004-10-19 2007-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a body contact in a Finfet structure and a device including the same
DE102005039365B4 (de) * 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
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US20060262469A1 (en) * 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
US7301741B2 (en) * 2005-05-17 2007-11-27 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
US20070025034A1 (en) * 2005-05-18 2007-02-01 Nimal Chaudhary Electronic circuit, electronic circuit arrangement and method for producing an electronic circuit

Also Published As

Publication number Publication date
JP2011509528A (ja) 2011-03-24
US7817387B2 (en) 2010-10-19
WO2009088622A1 (en) 2009-07-16
US20090174973A1 (en) 2009-07-09
TW200945553A (en) 2009-11-01
JP5418790B2 (ja) 2014-02-19
KR20100098680A (ko) 2010-09-08

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