JP2008270787A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2008270787A
JP2008270787A JP2008078647A JP2008078647A JP2008270787A JP 2008270787 A JP2008270787 A JP 2008270787A JP 2008078647 A JP2008078647 A JP 2008078647A JP 2008078647 A JP2008078647 A JP 2008078647A JP 2008270787 A JP2008270787 A JP 2008270787A
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Japan
Prior art keywords
substrate
element group
antenna
layer
semiconductor device
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Withdrawn
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JP2008078647A
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English (en)
Japanese (ja)
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JP2008270787A5 (https=
Inventor
Koji Oriki
浩二 大力
Konami Izumi
小波 泉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008078647A priority Critical patent/JP2008270787A/ja
Publication of JP2008270787A publication Critical patent/JP2008270787A/ja
Publication of JP2008270787A5 publication Critical patent/JP2008270787A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H01Q9/285—Planar dipole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/293—Configurations of stacked chips characterised by non-galvanic coupling between the chips, e.g. capacitive coupling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7426—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2008078647A 2007-03-26 2008-03-25 半導体装置 Withdrawn JP2008270787A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008078647A JP2008270787A (ja) 2007-03-26 2008-03-25 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007079190 2007-03-26
JP2008078647A JP2008270787A (ja) 2007-03-26 2008-03-25 半導体装置

Publications (2)

Publication Number Publication Date
JP2008270787A true JP2008270787A (ja) 2008-11-06
JP2008270787A5 JP2008270787A5 (https=) 2011-05-06

Family

ID=39745611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008078647A Withdrawn JP2008270787A (ja) 2007-03-26 2008-03-25 半導体装置

Country Status (3)

Country Link
US (2) US8619003B2 (https=)
EP (1) EP1988575A3 (https=)
JP (1) JP2008270787A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011170511A (ja) * 2010-02-17 2011-09-01 Alps Electric Co Ltd 静電容量式の入力装置
JP2012517913A (ja) * 2009-02-25 2012-08-09 カペラ フォトニクス インコーポレイテッド 統合したビアとスペーサを設けたｍｅｍｓデバイス
JP2012529871A (ja) * 2009-06-10 2012-11-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 超高速データ転送速度能力を有する短距離通信のためのミリメートル波無線相互接続（ｍ２ｗ２相互接続）方法
JP2014183349A (ja) * 2013-03-18 2014-09-29 Renesas Electronics Corp 半導体装置及び半導体チップ
JP2015208736A (ja) * 2014-04-30 2015-11-24 株式会社半導体エネルギー研究所 拭き取り装置および積層体の作製装置
KR101814729B1 (ko) * 2016-09-05 2018-01-04 (주)파코코리아인더스 기상 관측용 기압소자 및 이를 이용한 기압 측정 시스템
JP2020010137A (ja) * 2018-07-05 2020-01-16 株式会社エム・システム技研 計装システム
US11870042B2 (en) 2017-09-06 2024-01-09 Semiconductor Energy Laboratory Co., Ltd. Power storage system, vehicle, electronic device, and semiconductor device

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2382661B1 (en) 2008-12-30 2021-08-11 STMicroelectronics Srl Integrated electronic device with transceiving antenna and magnetic interconnection
US8712571B2 (en) * 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
US9240100B2 (en) 2010-02-10 2016-01-19 Leap Forward Gaming Virtual players card
US9245419B2 (en) 2010-02-10 2016-01-26 Leap Forward Gaming, Inc. Lottery games on an electronic gaming machine
BR112012025660B1 (pt) * 2010-04-08 2021-12-21 Nichia Corporation Dispositivo emissor de luz e método de fabricar o dispositivo emissor de luz
GB2490303A (en) * 2011-03-17 2012-10-31 Plastic Logic Ltd Encapsulated arrays of electronic switching devices
EP2508931A1 (en) * 2011-04-05 2012-10-10 Advanced Acoustic SF GmbH Micro mirror array screen
CN104051357B (zh) 2013-03-15 2017-04-12 财团法人工业技术研究院 环境敏感电子装置以及其封装方法
US9184143B2 (en) * 2013-12-05 2015-11-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with bump adjustment and manufacturing method thereof
TWI568077B (zh) * 2014-12-26 2017-01-21 環鴻科技股份有限公司 用於無線通訊之天線
CN105789837A (zh) 2014-12-26 2016-07-20 环旭电子股份有限公司 用于无线通信的天线
JP2016144261A (ja) * 2015-01-30 2016-08-08 ソニー株式会社 静電アクチュエータおよびスイッチ
JP6486735B2 (ja) * 2015-03-17 2019-03-20 東芝メモリ株式会社 半導体製造方法および半導体製造装置
CH711295B1 (fr) * 2015-07-06 2019-11-29 Cartier Int Ag Procédé de fixation par assemblage anodique.
US10145906B2 (en) * 2015-12-17 2018-12-04 Analog Devices Global Devices, systems and methods including magnetic structures
WO2017111769A1 (en) * 2015-12-22 2017-06-29 Intel Corporation Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric
US10621824B2 (en) 2016-09-23 2020-04-14 Igt Gaming system player identification device
NO345389B1 (en) * 2017-03-15 2021-01-11 Norbit Its Patch antenna feed
CN109727530A (zh) * 2017-10-31 2019-05-07 昆山工研院新型平板显示技术中心有限公司 柔性显示模组及柔性显示模组制备方法
EP3503287A1 (en) 2017-12-21 2019-06-26 IMEC vzw Improvements in or relating to antenna arrangements
US11427731B2 (en) 2018-03-23 2022-08-30 Teledyne Micralyne, Inc. Adhesive silicon oxynitride film
WO2019246587A2 (en) * 2018-06-21 2019-12-26 SeeScan, Inc. Electromagnetic marker devices for buried or hidden use
CN112701444B (zh) * 2019-10-22 2022-06-28 华为技术有限公司 天线、天线封装方法及终端
US11296750B2 (en) * 2020-05-12 2022-04-05 Nxp B.V. Near-field wireless device including a first near-field antenna and a second near-field antenna

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168033A (ja) * 1997-08-15 1999-03-09 Matsushita Electric Ind Co Ltd マルチチップモジュール
JP2003298012A (ja) * 2002-01-30 2003-10-17 Nippon Hoso Kyokai <Nhk> 半導体装置およびその製造方法
JP2005228981A (ja) * 2004-02-13 2005-08-25 Keio Gijuku 電子回路
JP2006270098A (ja) * 2005-03-24 2006-10-05 Memsic Inc 集積回路用ウエハレベルパッケージ
JP2006332576A (ja) * 2005-04-25 2006-12-07 Matsushita Electric Works Ltd 半導体装置およびその製造方法
WO2007029435A1 (ja) * 2005-09-02 2007-03-15 Nec Corporation 伝送方法、インターフェース回路、半導体装置、半導体パッケージ、半導体モジュールおよびメモリモジュール
JP2007073812A (ja) * 2005-09-08 2007-03-22 Mitsubishi Electric Corp 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902002A1 (de) * 1979-01-19 1980-07-31 Gerhard Krause Dreidimensional integrierte elektronische schaltungen
US5034753A (en) * 1989-06-01 1991-07-23 Weber Robert J Acoustically coupled antenna
US5202652A (en) * 1989-10-13 1993-04-13 Hitachi, Ltd. Surface acoustic wave filter device formed on a plurality of piezoelectric substrates
EP0886232B1 (en) * 1997-06-20 2007-09-05 Hitachi, Ltd. Reader and/or writer apparatus, power feeding system, and communication system
ATE382194T1 (de) * 2002-06-21 2008-01-15 Research In Motion Ltd Mehrelementantenne mit parasitärem koppler
WO2005015637A1 (ja) 2003-08-08 2005-02-17 Matsushita Electric Industrial Co., Ltd. 電子デバイスおよびその製造方法
WO2005093900A1 (en) * 2004-03-26 2005-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20050218398A1 (en) * 2004-04-06 2005-10-06 Availableip.Com NANO-electronics
US7119745B2 (en) * 2004-06-30 2006-10-10 International Business Machines Corporation Apparatus and method for constructing and packaging printed antenna devices
JP4912641B2 (ja) * 2004-08-23 2012-04-11 株式会社半導体エネルギー研究所 無線チップの作製方法
EP1797617A4 (en) * 2004-10-01 2009-08-12 Rochemont L Pierre De CERAMIC ANTENNA MODULE AND MANUFACTURING METHOD THEREFOR
US7106079B2 (en) * 2004-10-22 2006-09-12 Sun Microsystems, Inc. Using an interposer to facilate capacitive communication between face-to-face chips
KR100750742B1 (ko) * 2005-02-14 2007-08-22 삼성전자주식회사 Ｒｆ 시스템 및 그 제조방법
US7495462B2 (en) 2005-03-24 2009-02-24 Memsic, Inc. Method of wafer-level packaging using low-aspect ratio through-wafer holes
US7295029B2 (en) 2005-03-24 2007-11-13 Memsic, Inc. Chip-scale package for integrated circuits
US7688272B2 (en) * 2005-05-30 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4071253B2 (ja) * 2005-08-25 2008-04-02 東芝テック株式会社 複合アンテナ
TWI404924B (zh) * 2005-08-26 2013-08-11 Semiconductor Energy Lab 粒子偵測感測器、製造粒子偵測感測器的方法、以及使用粒子偵測感測器偵測粒子的方法
JP2007079190A (ja) 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd ディスプレイ駆動装置
US7728427B2 (en) * 2007-12-07 2010-06-01 Lctank Llc Assembling stacked substrates that can form cylindrical inductors and adjustable transformers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1168033A (ja) * 1997-08-15 1999-03-09 Matsushita Electric Ind Co Ltd マルチチップモジュール
JP2003298012A (ja) * 2002-01-30 2003-10-17 Nippon Hoso Kyokai <Nhk> 半導体装置およびその製造方法
JP2005228981A (ja) * 2004-02-13 2005-08-25 Keio Gijuku 電子回路
JP2006270098A (ja) * 2005-03-24 2006-10-05 Memsic Inc 集積回路用ウエハレベルパッケージ
JP2006332576A (ja) * 2005-04-25 2006-12-07 Matsushita Electric Works Ltd 半導体装置およびその製造方法
WO2007029435A1 (ja) * 2005-09-02 2007-03-15 Nec Corporation 伝送方法、インターフェース回路、半導体装置、半導体パッケージ、半導体モジュールおよびメモリモジュール
JP2007073812A (ja) * 2005-09-08 2007-03-22 Mitsubishi Electric Corp 半導体装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012517913A (ja) * 2009-02-25 2012-08-09 カペラ フォトニクス インコーポレイテッド 統合したビアとスペーサを設けたｍｅｍｓデバイス
JP2012529871A (ja) * 2009-06-10 2012-11-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 超高速データ転送速度能力を有する短距離通信のためのミリメートル波無線相互接続（ｍ２ｗ２相互接続）方法
US8817891B2 (en) 2009-06-10 2014-08-26 The Regents Of The University Of California Milli-meter-wave-wireless-interconnect (M2W2-interconnect) method for short-range communications with ultra-high data rate capability
US8971421B2 (en) 2009-06-10 2015-03-03 The Regents Of The University Of California Milli-meter-wave-wireless-interconnect (M2W2-interconnect) method for short-range communications with ultra-high data rate capability
JP2015181283A (ja) * 2009-06-10 2015-10-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 超高速データ転送速度能力を有する短距離通信のためのミリメートル波無線相互接続（ｍ２ｗ２相互接続）方法
JP2011170511A (ja) * 2010-02-17 2011-09-01 Alps Electric Co Ltd 静電容量式の入力装置
JP2014183349A (ja) * 2013-03-18 2014-09-29 Renesas Electronics Corp 半導体装置及び半導体チップ
JP2015208736A (ja) * 2014-04-30 2015-11-24 株式会社半導体エネルギー研究所 拭き取り装置および積層体の作製装置
US10343191B2 (en) 2014-04-30 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Wiping device and stack manufacturing apparatus
KR101814729B1 (ko) * 2016-09-05 2018-01-04 (주)파코코리아인더스 기상 관측용 기압소자 및 이를 이용한 기압 측정 시스템
US11870042B2 (en) 2017-09-06 2024-01-09 Semiconductor Energy Laboratory Co., Ltd. Power storage system, vehicle, electronic device, and semiconductor device
JP2020010137A (ja) * 2018-07-05 2020-01-16 株式会社エム・システム技研 計装システム

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US8902123B2 (en) 2014-12-02
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