JP2008270762A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008270762A5 JP2008270762A5 JP2008062132A JP2008062132A JP2008270762A5 JP 2008270762 A5 JP2008270762 A5 JP 2008270762A5 JP 2008062132 A JP2008062132 A JP 2008062132A JP 2008062132 A JP2008062132 A JP 2008062132A JP 2008270762 A5 JP2008270762 A5 JP 2008270762A5
- Authority
- JP
- Japan
- Prior art keywords
- organic resin
- substrate
- fibrous body
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000011347 resin Substances 0.000 claims 21
- 229920005989 resin Polymers 0.000 claims 21
- 239000004065 semiconductor Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 20
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000000835 fiber Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 238000007789 sealing Methods 0.000 claims 6
- 238000004381 surface treatment Methods 0.000 claims 5
- 229910052582 BN Inorganic materials 0.000 claims 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000003851 corona treatment Methods 0.000 claims 1
- 239000007822 coupling agent Substances 0.000 claims 1
- 208000028659 discharge Diseases 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008062132A JP2008270762A (ja) | 2007-03-26 | 2008-03-12 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007079264 | 2007-03-26 | ||
| JP2008062132A JP2008270762A (ja) | 2007-03-26 | 2008-03-12 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008270762A JP2008270762A (ja) | 2008-11-06 |
| JP2008270762A5 true JP2008270762A5 (enExample) | 2011-03-17 |
Family
ID=39643903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008062132A Withdrawn JP2008270762A (ja) | 2007-03-26 | 2008-03-12 | 半導体装置の作製方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7785933B2 (enExample) |
| EP (1) | EP1976000A3 (enExample) |
| JP (1) | JP2008270762A (enExample) |
| KR (1) | KR101466594B1 (enExample) |
| CN (1) | CN101276767B (enExample) |
| TW (1) | TWI442513B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101478810B1 (ko) | 2006-07-28 | 2015-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
| EP2372756A1 (en) | 2007-03-13 | 2011-10-05 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009205669A (ja) * | 2008-01-31 | 2009-09-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP5473413B2 (ja) | 2008-06-20 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法 |
| US8563397B2 (en) * | 2008-07-09 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5358324B2 (ja) * | 2008-07-10 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 電子ペーパー |
| JP2010041040A (ja) * | 2008-07-10 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 光電変換装置および光電変換装置の製造方法 |
| WO2010005064A1 (en) * | 2008-07-10 | 2010-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| WO2010035627A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5583951B2 (ja) * | 2008-11-11 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5470054B2 (ja) | 2009-01-22 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| GB2469628A (en) * | 2009-04-20 | 2010-10-27 | Michael Edward Beese | Two Part Identification Label |
| WO2010140522A1 (en) * | 2009-06-05 | 2010-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| KR101677076B1 (ko) * | 2009-06-05 | 2016-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 디바이스 및 그 제조 방법 |
| WO2010140539A1 (en) * | 2009-06-05 | 2010-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US8345435B2 (en) * | 2009-08-07 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof |
| JP5719560B2 (ja) * | 2009-10-21 | 2015-05-20 | 株式会社半導体エネルギー研究所 | 端子構造の作製方法 |
| JP5896594B2 (ja) * | 2010-05-14 | 2016-03-30 | 株式会社村田製作所 | 無線icデバイス |
| CN102403225B (zh) * | 2010-09-07 | 2013-08-14 | 无锡华润上华半导体有限公司 | 沟渠双扩散金属氧化半导体制作方法及装置 |
| US8518798B2 (en) * | 2010-09-23 | 2013-08-27 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| KR101679657B1 (ko) | 2010-09-29 | 2016-11-25 | 삼성전자주식회사 | 유리섬유를 이용한 웨이퍼 레벨 몰드 형성방법 및 그 방법에 의한 웨이퍼 구조 |
| EP2643704B1 (en) * | 2010-11-26 | 2018-01-24 | The National Microelectronics Applications Centre | An ac current or voltage sensor |
| US20130229776A1 (en) * | 2011-12-23 | 2013-09-05 | Wisconsin Alumni Research Foundation | High-speed, flexible integrated circuits and methods for making high-speed, flexible integrated circuits |
| JP2014135422A (ja) * | 2013-01-11 | 2014-07-24 | Toyota Motor Corp | 半導体装置の製造方法 |
| KR102086098B1 (ko) * | 2013-07-03 | 2020-03-09 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102135275B1 (ko) * | 2013-07-29 | 2020-07-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
| KR101418974B1 (ko) * | 2014-01-23 | 2014-07-14 | 김용석 | 스마트 단말기용 보호필름 관리시스템 |
| KR101821861B1 (ko) | 2015-10-15 | 2018-01-25 | 한국과학기술원 | 섬유 기판을 이용하는 착용 가능한 메모리 및 그 제작 방법 |
| US20170170016A1 (en) * | 2015-12-14 | 2017-06-15 | Globalfoundries Inc. | Multiple patterning method for substrate |
| DE102016107678B4 (de) | 2016-04-26 | 2023-12-28 | Infineon Technologies Ag | Halbleitervorrichtungen mit on-chip-antennen und deren herstellung |
| JP6577910B2 (ja) * | 2016-06-23 | 2019-09-18 | ルネサスエレクトロニクス株式会社 | 電子装置 |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85104878A (zh) * | 1985-05-26 | 1987-01-07 | 米尔顿·伊万·罗斯 | 电子线路器件的封装及其制造方法和设备 |
| KR930003894B1 (ko) * | 1989-01-25 | 1993-05-15 | 아사히가세이고오교가부시끼가이샤 | 신규한 프리프레그와 복합 성형체, 및 복합 성형체의 제조방법 |
| DE3907757A1 (de) * | 1989-03-10 | 1990-09-13 | Mtu Muenchen Gmbh | Schutzfolie |
| JPH04196346A (ja) * | 1990-11-28 | 1992-07-16 | Hitachi Ltd | 薄型樹脂封止型半導体装置 |
| US5888609A (en) * | 1990-12-18 | 1999-03-30 | Valtion Teknillinen Tutkimuskeskus | Planar porous composite structure and method for its manufacture |
| JPH05190582A (ja) | 1992-01-08 | 1993-07-30 | Oki Electric Ind Co Ltd | 樹脂封止半導体装置及びその製造方法 |
| JP3578466B2 (ja) * | 1992-04-14 | 2004-10-20 | ユニチカ株式会社 | 補強用無機繊維織布及びそれを用いた多層プリント配線板 |
| JPH077246A (ja) * | 1993-06-17 | 1995-01-10 | Kobe Steel Ltd | 電子部品構成物内蔵インモールド品の製造方法 |
| DK0760986T3 (da) * | 1994-05-27 | 1999-05-25 | Ake Gustafson | Fremgangsmåde til fremstilling af et elektronisk modul og elektronisk modul frembragt ved fremgangsmåden |
| TW371285B (en) * | 1994-09-19 | 1999-10-01 | Amp Akzo Linlam Vof | Foiled UD-prepreg and PWB laminate prepared therefrom |
| JP3364081B2 (ja) * | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5757456A (en) * | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
| JP4015717B2 (ja) * | 1995-06-29 | 2007-11-28 | 日立マクセル株式会社 | 情報担体の製造方法 |
| JPH09116182A (ja) * | 1995-10-17 | 1997-05-02 | Canon Inc | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
| US6482495B1 (en) * | 1996-09-04 | 2002-11-19 | Hitachi Maxwell, Ltd. | Information carrier and process for production thereof |
| JPH1092980A (ja) * | 1996-09-13 | 1998-04-10 | Toshiba Corp | 無線カードおよびその製造方法 |
| JP3428472B2 (ja) * | 1998-12-03 | 2003-07-22 | 富士通株式会社 | プリント板ユニットと、そのプリント板ユニットの製造方法 |
| JP2004078991A (ja) | 1998-12-17 | 2004-03-11 | Hitachi Ltd | 半導体装置およびその製造方法 |
| TW484101B (en) * | 1998-12-17 | 2002-04-21 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| US6224965B1 (en) * | 1999-06-25 | 2001-05-01 | Honeywell International Inc. | Microfiber dielectrics which facilitate laser via drilling |
| JP4423779B2 (ja) * | 1999-10-13 | 2010-03-03 | 味の素株式会社 | エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法 |
| JP3675688B2 (ja) * | 2000-01-27 | 2005-07-27 | 寛治 大塚 | 配線基板及びその製造方法 |
| JP4884592B2 (ja) | 2000-03-15 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法及び表示装置の作製方法 |
| JP4703030B2 (ja) * | 2001-05-15 | 2011-06-15 | 旭化成イーマテリアルズ株式会社 | メッキによってパターン形成されたガラスクロス |
| US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP2003049388A (ja) | 2001-08-08 | 2003-02-21 | Du Pont Toray Co Ltd | 扁平化したアラミド繊維からなる布帛 |
| US6903377B2 (en) * | 2001-11-09 | 2005-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| KR100430001B1 (ko) * | 2001-12-18 | 2004-05-03 | 엘지전자 주식회사 | 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법 |
| JP2003282610A (ja) * | 2002-01-16 | 2003-10-03 | Nippon Koden Corp | 導電性部分の絶縁方法および半導体センサ製造方法 |
| US7485489B2 (en) * | 2002-06-19 | 2009-02-03 | Bjoersell Sten | Electronics circuit manufacture |
| AU2003253227A1 (en) | 2002-06-19 | 2004-01-06 | Sten Bjorsell | Electronics circuit manufacture |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4828088B2 (ja) | 2003-06-05 | 2011-11-30 | 凸版印刷株式会社 | Icタグ |
| JP4540359B2 (ja) * | 2004-02-10 | 2010-09-08 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US20050233122A1 (en) * | 2004-04-19 | 2005-10-20 | Mikio Nishimura | Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein |
| KR101226260B1 (ko) * | 2004-06-02 | 2013-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| KR20060045208A (ko) * | 2004-11-12 | 2006-05-17 | 삼성테크윈 주식회사 | 반도체 팩키지용 회로기판 및 이의 제조방법 |
| US7736964B2 (en) * | 2004-11-22 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing the same |
| US7465674B2 (en) * | 2005-05-31 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US7727859B2 (en) * | 2005-06-30 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
| US7685706B2 (en) * | 2005-07-08 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd | Method of manufacturing a semiconductor device |
| JP5127178B2 (ja) * | 2005-07-29 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7700463B2 (en) * | 2005-09-02 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4682764B2 (ja) | 2005-09-15 | 2011-05-11 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターン形成方法及び電子部品 |
| JP2007091822A (ja) | 2005-09-27 | 2007-04-12 | Shin Kobe Electric Mach Co Ltd | プリプレグ |
| TWI431726B (zh) * | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| CN101479747B (zh) * | 2006-06-26 | 2011-05-18 | 株式会社半导体能源研究所 | 包括半导体器件的纸及其制造方法 |
| EP2372756A1 (en) * | 2007-03-13 | 2011-10-05 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2008
- 2008-03-11 EP EP08004496A patent/EP1976000A3/en not_active Withdrawn
- 2008-03-12 JP JP2008062132A patent/JP2008270762A/ja not_active Withdrawn
- 2008-03-14 US US12/076,148 patent/US7785933B2/en not_active Expired - Fee Related
- 2008-03-24 KR KR1020080027015A patent/KR101466594B1/ko not_active Expired - Fee Related
- 2008-03-24 TW TW097110380A patent/TWI442513B/zh not_active IP Right Cessation
- 2008-03-25 CN CN2008100879672A patent/CN101276767B/zh not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008270762A5 (enExample) | ||
| JP2008270761A5 (enExample) | ||
| WO2007149788A3 (en) | Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure | |
| DE602007011470D1 (de) | Verfahren zur herstellung kristalliner silizium-so | |
| WO2008051503A3 (en) | Light-emitter-based devices with lattice-mismatched semiconductor structures | |
| EP1976000A3 (en) | Method for manufacturing semiconductor device | |
| JP2009038368A5 (enExample) | ||
| CN101882624B (zh) | 在绝缘衬底上形成有高Ge应变层的结构及形成方法 | |
| JP2008257710A5 (enExample) | ||
| JP2012083733A5 (ja) | 発光表示装置の作製方法 | |
| WO2008078516A1 (ja) | 酸化シリコン薄膜の製造装置及び形成方法 | |
| GB2456712A (en) | Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region | |
| JP2008047918A5 (enExample) | ||
| EP1780774A4 (en) | HEAT TREATMENT TENSIONING DEVICE FOR A SEMICONDUCTOR SILICON SUBSTRATE | |
| JP2006313906A5 (enExample) | ||
| JP2010134466A5 (ja) | 液晶表示装置の作製方法 | |
| JP2008160095A5 (enExample) | ||
| JP2009060095A5 (enExample) | ||
| JP2013095809A5 (enExample) | ||
| WO2010065457A3 (en) | Method of providing a semiconductor device with a dielectric layer and semiconductor device thereof | |
| WO2010025218A3 (en) | Composite semiconductor substrates for thin-film device layer transfer | |
| JP2012124486A5 (enExample) | ||
| JP2018526825A (ja) | 電界効果トランジスタ形成方法 | |
| JP2010262977A5 (enExample) | ||
| JP2011100985A5 (enExample) |