CN101276767B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN101276767B
CN101276767B CN2008100879672A CN200810087967A CN101276767B CN 101276767 B CN101276767 B CN 101276767B CN 2008100879672 A CN2008100879672 A CN 2008100879672A CN 200810087967 A CN200810087967 A CN 200810087967A CN 101276767 B CN101276767 B CN 101276767B
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China
Prior art keywords
fiber body
organic resin
element substrate
semiconductor device
substrate
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Expired - Fee Related
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CN2008100879672A
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Chinese (zh)
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CN101276767A (zh
Inventor
道前芳隆
杉山荣二
大谷久
鹤目卓也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN2008100879672A 2007-03-26 2008-03-25 半导体装置的制造方法 Expired - Fee Related CN101276767B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-079264 2007-03-26
JP2007079264 2007-03-26

Publications (2)

Publication Number Publication Date
CN101276767A CN101276767A (zh) 2008-10-01
CN101276767B true CN101276767B (zh) 2012-12-12

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Country Link
US (1) US7785933B2 (enExample)
EP (1) EP1976000A3 (enExample)
JP (1) JP2008270762A (enExample)
KR (1) KR101466594B1 (enExample)
CN (1) CN101276767B (enExample)
TW (1) TWI442513B (enExample)

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JP2009205669A (ja) * 2008-01-31 2009-09-10 Semiconductor Energy Lab Co Ltd 半導体装置
JP5473413B2 (ja) 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
US8563397B2 (en) * 2008-07-09 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5358324B2 (ja) * 2008-07-10 2013-12-04 株式会社半導体エネルギー研究所 電子ペーパー
JP2010041040A (ja) * 2008-07-10 2010-02-18 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の製造方法
WO2010005064A1 (en) * 2008-07-10 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5583951B2 (ja) * 2008-11-11 2014-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5470054B2 (ja) 2009-01-22 2014-04-16 株式会社半導体エネルギー研究所 半導体装置
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WO2010140522A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
WO2010140539A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US8345435B2 (en) * 2009-08-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
JP5896594B2 (ja) * 2010-05-14 2016-03-30 株式会社村田製作所 無線ｉｃデバイス
CN102403225B (zh) * 2010-09-07 2013-08-14 无锡华润上华半导体有限公司 沟渠双扩散金属氧化半导体制作方法及装置
US8518798B2 (en) * 2010-09-23 2013-08-27 Infineon Technologies Ag Semiconductor structure and method for making same
KR101679657B1 (ko) 2010-09-29 2016-11-25 삼성전자주식회사 유리섬유를 이용한 웨이퍼 레벨 몰드 형성방법 및 그 방법에 의한 웨이퍼 구조
EP2643704B1 (en) * 2010-11-26 2018-01-24 The National Microelectronics Applications Centre An ac current or voltage sensor
US20130229776A1 (en) * 2011-12-23 2013-09-05 Wisconsin Alumni Research Foundation High-speed, flexible integrated circuits and methods for making high-speed, flexible integrated circuits
JP2014135422A (ja) * 2013-01-11 2014-07-24 Toyota Motor Corp 半導体装置の製造方法
KR102086098B1 (ko) * 2013-07-03 2020-03-09 삼성디스플레이 주식회사 표시 장치
KR102135275B1 (ko) * 2013-07-29 2020-07-20 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치
KR101418974B1 (ko) * 2014-01-23 2014-07-14 김용석 스마트 단말기용 보호필름 관리시스템
KR101821861B1 (ko) 2015-10-15 2018-01-25 한국과학기술원 섬유 기판을 이용하는 착용 가능한 메모리 및 그 제작 방법
US20170170016A1 (en) * 2015-12-14 2017-06-15 Globalfoundries Inc. Multiple patterning method for substrate
DE102016107678B4 (de) 2016-04-26 2023-12-28 Infineon Technologies Ag Halbleitervorrichtungen mit on-chip-antennen und deren herstellung
JP6577910B2 (ja) * 2016-06-23 2019-09-18 ルネサスエレクトロニクス株式会社 電子装置

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Also Published As

Publication number Publication date
CN101276767A (zh) 2008-10-01
EP1976000A3 (en) 2009-05-13
KR20080087693A (ko) 2008-10-01
US20080311706A1 (en) 2008-12-18
TW200903720A (en) 2009-01-16
KR101466594B1 (ko) 2014-11-28
TWI442513B (zh) 2014-06-21
EP1976000A2 (en) 2008-10-01
US7785933B2 (en) 2010-08-31
JP2008270762A (ja) 2008-11-06

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