TWI442513B - 半導體裝置的製造方法 - Google Patents
半導體裝置的製造方法 Download PDFInfo
- Publication number
- TWI442513B TWI442513B TW097110380A TW97110380A TWI442513B TW I442513 B TWI442513 B TW I442513B TW 097110380 A TW097110380 A TW 097110380A TW 97110380 A TW97110380 A TW 97110380A TW I442513 B TWI442513 B TW I442513B
- Authority
- TW
- Taiwan
- Prior art keywords
- element substrate
- organic resin
- semiconductor device
- substrate
- fibrous body
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007079264 | 2007-03-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200903720A TW200903720A (en) | 2009-01-16 |
| TWI442513B true TWI442513B (zh) | 2014-06-21 |
Family
ID=39643903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097110380A TWI442513B (zh) | 2007-03-26 | 2008-03-24 | 半導體裝置的製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7785933B2 (enExample) |
| EP (1) | EP1976000A3 (enExample) |
| JP (1) | JP2008270762A (enExample) |
| KR (1) | KR101466594B1 (enExample) |
| CN (1) | CN101276767B (enExample) |
| TW (1) | TWI442513B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101478810B1 (ko) | 2006-07-28 | 2015-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
| EP2372756A1 (en) | 2007-03-13 | 2011-10-05 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009205669A (ja) * | 2008-01-31 | 2009-09-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP5473413B2 (ja) | 2008-06-20 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法 |
| US8563397B2 (en) * | 2008-07-09 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5358324B2 (ja) * | 2008-07-10 | 2013-12-04 | 株式会社半導体エネルギー研究所 | 電子ペーパー |
| JP2010041040A (ja) * | 2008-07-10 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 光電変換装置および光電変換装置の製造方法 |
| WO2010005064A1 (en) * | 2008-07-10 | 2010-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| WO2010035627A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5583951B2 (ja) * | 2008-11-11 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5470054B2 (ja) | 2009-01-22 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| GB2469628A (en) * | 2009-04-20 | 2010-10-27 | Michael Edward Beese | Two Part Identification Label |
| WO2010140522A1 (en) * | 2009-06-05 | 2010-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
| KR101677076B1 (ko) * | 2009-06-05 | 2016-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 디바이스 및 그 제조 방법 |
| WO2010140539A1 (en) * | 2009-06-05 | 2010-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US8345435B2 (en) * | 2009-08-07 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof |
| JP5719560B2 (ja) * | 2009-10-21 | 2015-05-20 | 株式会社半導体エネルギー研究所 | 端子構造の作製方法 |
| JP5896594B2 (ja) * | 2010-05-14 | 2016-03-30 | 株式会社村田製作所 | 無線icデバイス |
| CN102403225B (zh) * | 2010-09-07 | 2013-08-14 | 无锡华润上华半导体有限公司 | 沟渠双扩散金属氧化半导体制作方法及装置 |
| US8518798B2 (en) * | 2010-09-23 | 2013-08-27 | Infineon Technologies Ag | Semiconductor structure and method for making same |
| KR101679657B1 (ko) | 2010-09-29 | 2016-11-25 | 삼성전자주식회사 | 유리섬유를 이용한 웨이퍼 레벨 몰드 형성방법 및 그 방법에 의한 웨이퍼 구조 |
| EP2643704B1 (en) * | 2010-11-26 | 2018-01-24 | The National Microelectronics Applications Centre | An ac current or voltage sensor |
| US20130229776A1 (en) * | 2011-12-23 | 2013-09-05 | Wisconsin Alumni Research Foundation | High-speed, flexible integrated circuits and methods for making high-speed, flexible integrated circuits |
| JP2014135422A (ja) * | 2013-01-11 | 2014-07-24 | Toyota Motor Corp | 半導体装置の製造方法 |
| KR102086098B1 (ko) * | 2013-07-03 | 2020-03-09 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102135275B1 (ko) * | 2013-07-29 | 2020-07-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
| KR101418974B1 (ko) * | 2014-01-23 | 2014-07-14 | 김용석 | 스마트 단말기용 보호필름 관리시스템 |
| KR101821861B1 (ko) | 2015-10-15 | 2018-01-25 | 한국과학기술원 | 섬유 기판을 이용하는 착용 가능한 메모리 및 그 제작 방법 |
| US20170170016A1 (en) * | 2015-12-14 | 2017-06-15 | Globalfoundries Inc. | Multiple patterning method for substrate |
| DE102016107678B4 (de) | 2016-04-26 | 2023-12-28 | Infineon Technologies Ag | Halbleitervorrichtungen mit on-chip-antennen und deren herstellung |
| JP6577910B2 (ja) * | 2016-06-23 | 2019-09-18 | ルネサスエレクトロニクス株式会社 | 電子装置 |
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| KR930003894B1 (ko) * | 1989-01-25 | 1993-05-15 | 아사히가세이고오교가부시끼가이샤 | 신규한 프리프레그와 복합 성형체, 및 복합 성형체의 제조방법 |
| DE3907757A1 (de) * | 1989-03-10 | 1990-09-13 | Mtu Muenchen Gmbh | Schutzfolie |
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| JP2004078991A (ja) | 1998-12-17 | 2004-03-11 | Hitachi Ltd | 半導体装置およびその製造方法 |
| TW484101B (en) * | 1998-12-17 | 2002-04-21 | Hitachi Ltd | Semiconductor device and its manufacturing method |
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| JP3675688B2 (ja) * | 2000-01-27 | 2005-07-27 | 寛治 大塚 | 配線基板及びその製造方法 |
| JP4884592B2 (ja) | 2000-03-15 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法及び表示装置の作製方法 |
| JP4703030B2 (ja) * | 2001-05-15 | 2011-06-15 | 旭化成イーマテリアルズ株式会社 | メッキによってパターン形成されたガラスクロス |
| US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP2003049388A (ja) | 2001-08-08 | 2003-02-21 | Du Pont Toray Co Ltd | 扁平化したアラミド繊維からなる布帛 |
| US6903377B2 (en) * | 2001-11-09 | 2005-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| KR100430001B1 (ko) * | 2001-12-18 | 2004-05-03 | 엘지전자 주식회사 | 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법 |
| JP2003282610A (ja) * | 2002-01-16 | 2003-10-03 | Nippon Koden Corp | 導電性部分の絶縁方法および半導体センサ製造方法 |
| US7485489B2 (en) * | 2002-06-19 | 2009-02-03 | Bjoersell Sten | Electronics circuit manufacture |
| AU2003253227A1 (en) | 2002-06-19 | 2004-01-06 | Sten Bjorsell | Electronics circuit manufacture |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4828088B2 (ja) | 2003-06-05 | 2011-11-30 | 凸版印刷株式会社 | Icタグ |
| JP4540359B2 (ja) * | 2004-02-10 | 2010-09-08 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US20050233122A1 (en) * | 2004-04-19 | 2005-10-20 | Mikio Nishimura | Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein |
| KR101226260B1 (ko) * | 2004-06-02 | 2013-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| KR20060045208A (ko) * | 2004-11-12 | 2006-05-17 | 삼성테크윈 주식회사 | 반도체 팩키지용 회로기판 및 이의 제조방법 |
| US7736964B2 (en) * | 2004-11-22 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method for manufacturing the same |
| US7465674B2 (en) * | 2005-05-31 | 2008-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US7727859B2 (en) * | 2005-06-30 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
| US7685706B2 (en) * | 2005-07-08 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd | Method of manufacturing a semiconductor device |
| JP5127178B2 (ja) * | 2005-07-29 | 2013-01-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7700463B2 (en) * | 2005-09-02 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4682764B2 (ja) | 2005-09-15 | 2011-05-11 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターン形成方法及び電子部品 |
| JP2007091822A (ja) | 2005-09-27 | 2007-04-12 | Shin Kobe Electric Mach Co Ltd | プリプレグ |
| TWI431726B (zh) * | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| CN101479747B (zh) * | 2006-06-26 | 2011-05-18 | 株式会社半导体能源研究所 | 包括半导体器件的纸及其制造方法 |
| EP2372756A1 (en) * | 2007-03-13 | 2011-10-05 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) * | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2008
- 2008-03-11 EP EP08004496A patent/EP1976000A3/en not_active Withdrawn
- 2008-03-12 JP JP2008062132A patent/JP2008270762A/ja not_active Withdrawn
- 2008-03-14 US US12/076,148 patent/US7785933B2/en not_active Expired - Fee Related
- 2008-03-24 KR KR1020080027015A patent/KR101466594B1/ko not_active Expired - Fee Related
- 2008-03-24 TW TW097110380A patent/TWI442513B/zh not_active IP Right Cessation
- 2008-03-25 CN CN2008100879672A patent/CN101276767B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101276767A (zh) | 2008-10-01 |
| EP1976000A3 (en) | 2009-05-13 |
| KR20080087693A (ko) | 2008-10-01 |
| US20080311706A1 (en) | 2008-12-18 |
| TW200903720A (en) | 2009-01-16 |
| KR101466594B1 (ko) | 2014-11-28 |
| CN101276767B (zh) | 2012-12-12 |
| EP1976000A2 (en) | 2008-10-01 |
| US7785933B2 (en) | 2010-08-31 |
| JP2008270762A (ja) | 2008-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |