JP2008270762A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2008270762A JP2008270762A JP2008062132A JP2008062132A JP2008270762A JP 2008270762 A JP2008270762 A JP 2008270762A JP 2008062132 A JP2008062132 A JP 2008062132A JP 2008062132 A JP2008062132 A JP 2008062132A JP 2008270762 A JP2008270762 A JP 2008270762A
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
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- H—ELECTRICITY
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Abstract
【解決手段】単結晶半導体基板またはSOI基板を用いて単結晶基板またはSOI基板を用いて形成された半導体素子を有する素子基板を形成し、素子基板上に有機化合物または無機化合物の繊維体を設け、素子基板及び繊維体上から有機樹脂を含む組成物を塗布し、加熱することにより、素子基板上に有機化合物または無機化合物の繊維体に有機樹脂が含浸された封止層を形成して半導体装置を作製する。
【選択図】図1
Description
本実施の形態では、外部からの局所的圧力がかかっても破損しにくい半導体装置を歩留まり高く作製する方法を、図1を用いて示す。
本実施の形態では、実施の形態1と比較して、さらに破壊されにくい半導体装置の作製方法を図4を用いて説明する。
本実施の形態では、素子基板上にアンテナが形成されず、別の基板に設けられたアンテナを素子基板に接続した半導体装置の作製方法について、図5乃至図7を用いて説明する。
本実施の形態では、実施の形態1乃至3で示す単結晶半導体基板またはSOI基板を用いて形成される半導体素子を含む素子基板がプリント基板に接続された半導体装置について、図10を用いて説明する。
(実施の形態5)
(実施の形態6)
Claims (12)
- 単結晶半導体基板またはSOI基板を用いて形成された能動素子及び前記能動素子を覆う絶縁層を有する素子基板を形成し、
前記素子基板上に繊維体を設け、前記繊維体及び前記素子基板上から有機樹脂を含む組成物を塗布した後、加熱して、前記素子基板上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む封止層を形成することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子及び前記能動素子を覆う絶縁層を有する素子基板を形成し、
前記素子基板の一方の面に第1の繊維体を設け、前記第1の繊維体及び前記素子基板上から第1の有機樹脂を含む組成物を塗布した後、加熱して、前記素子基板上に前記第1の繊維体及び前記第1の繊維体に含浸された第1の有機樹脂を含む第1の封止層を形成し、
第2の繊維体を前記素子基板の他方の面に設け、前記第2の繊維体及び前記素子基板上から第2の有機樹脂を含む組成物を塗布した後、加熱して、前記素子基板上に前記第2の繊維体及び前記第2の繊維体に含浸された第2の有機樹脂を含む第2の封止層を形成することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子及び前記能動素子を覆う絶縁層を有する素子基板を形成し、
前記素子基板上に有機樹脂層を形成し、前記有機樹脂層及び前記素子基板上に繊維体を設けた後、加熱して、前記素子基板上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む封止層を形成することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子及び前記能動素子を覆う絶縁層を有する素子基板を形成し、
前記素子基板上に第1の有機樹脂層を形成し、前記第1の有機樹脂層及び前記素子基板上に第1の繊維体を設けた後、加熱して、前記素子基板上に前記第1の繊維体及び前記第1の繊維体に含浸された第1の有機樹脂を含む第1の封止層を形成し、
第2の有機樹脂層を前記素子基板の他方の面に形成し、前記第2の有機樹脂層及び前記素子基板上に第2の繊維体を設けた後、加熱して、前記素子基板上に前記第2の繊維体及び前記第2の繊維体に含浸された第2の有機樹脂を含む第2の封止層を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至4のいずれか一項において、前記素子基板上にアンテナを形成することを特徴とする半導体装置の作製方法。
- 単結晶半導体基板またはSOI基板を用いて形成された能動素子、前記能動素子を覆う絶縁層、及び配線を有する素子基板を形成し、
前記素子基板上に繊維体を設け、前記繊維体及び前記素子基板上から有機樹脂を含む組成物を塗布した後、加熱して、前記素子基板上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む封止層を形成し、
前記封止層の開口部に前記配線に接続する接続端子を形成し、
前記封止層にアンテナを有する基板を貼り付けると共に、前記接続端子及び前記アンテナを電気的に接続することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子、前記能動素子を覆う絶縁層、及び配線を有する素子基板を形成し、
前記素子基板の一方の面に第1の繊維体を設け、前記第1の繊維体及び前記素子基板上から第1の有機樹脂を含む組成物を塗布した後加熱して、前記素子基板上に前記第1の繊維体及び前記第1の繊維体に含浸された前記第1の有機樹脂を含む第1の封止層を形成し、前記第1の封止層の開口部に前記配線に接続する接続端子を形成し、
前記第1の封止層にアンテナを有する基板を貼り付けると共に、前記接続端子及び前記アンテナを電気的に接続し、
第2の繊維体を前記素子基板の他方の面に設け、前記第2の繊維体及び前記素子基板上から第2の有機樹脂を含む組成物を塗布した後、加熱して、前記素子基板上に前記第2の繊維体及び前記第2の繊維体に含浸された第2の有機樹脂を含む第2の封止層を形成することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子、前記能動素子を覆う絶縁層、第1の配線、及び第2の配線を有する素子基板を形成し、
前記素子基板の一方の面に第1の繊維体を設け、前記第1の繊維体及び前記素子基板上から前記第1の配線の一部を露出する開口部を有する第1の有機樹脂層を含む組成物を塗布した後、加熱して、前記素子基板上に前記第1の繊維体及び前記第1の繊維体に含浸された第1の有機樹脂を含む第1の封止層を形成し、前記第1の封止層の開口部に前記第1の配線に接続する第1の接続端子を形成し、
前記第1の封止層に第1のアンテナを有する基板を貼り付けると共に、前記第1の接続端子及び前記第1のアンテナを電気的に接続し、
第2の繊維体を前記素子基板の他方の面に設け、前記第2の繊維体及び前記素子基板上から第2の有機樹脂を含む組成物を塗布した後、加熱して、前記素子基板上に前記第2の繊維体及び前記第2の繊維体に含浸された第2の有機樹脂を含む第2の封止層を形成した後、前記第2の配線の一部を露出する開口部を形成し、前記第2の有機樹脂層の開口部に前記第2の配線に接続する第2の接続端子を形成し、
前記第2の封止層に第2のアンテナを有する基板を貼り付けると共に、前記第2の接続端子及び前記第2のアンテナを電気的に接続することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子、前記能動素子を覆う絶縁層、及び配線を有する素子基板を形成し、
前記素子基板上に前記配線の一部を露出する開口部を有する有機樹脂層を形成し、前記有機樹脂層及び前記素子基板上に繊維体を設けた後、加熱して、前記素子基板上に前記繊維体及び前記繊維体に含浸された有機樹脂を含む封止層を形成し、前記有機樹脂層の開口部に前記配線に接続する接続端子を形成し、
前記封止層にアンテナを有する基板を貼り付けると共に、前記接続端子及び前記アンテナを電気的に接続することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子、前記能動素子を覆う絶縁層、及び配線を有する素子基板を形成し、
前記素子基板の一方の面に前記配線の一部を露出する開口部を有する第1の有機樹脂層を形成し、前記第1の機樹脂層及び前記素子基板上に第1の繊維体を設けた後加熱して、前記素子基板上に前記第1の繊維体及び前記第1の繊維体に含浸された第1の有機樹脂を含む第1の封止層を形成し、前記第1の有機樹脂層の開口部に前記配線に接続する接続端子を形成し、
前記第1の封止層にアンテナを有する基板を貼り付けると共に、前記接続端子及び前記アンテナを電気的に接続し、
第2の有機樹脂層を前記素子基板の他方の面に形成し、前記第2の有機樹脂層及び前記素子基板上に第2の繊維体を設けた後、加熱して、前記素子基板上に前記第2の繊維体及び前記第2の繊維体に含浸された第2の有機樹脂を含む第2の封止層を形成することを特徴とする半導体装置の作製方法。 - 単結晶半導体基板またはSOI基板を用いて形成された能動素子、前記能動素子を覆う絶縁層、第1の配線、及び第2の配線を有する素子基板を形成し、前記素子基板上に前記第1の配線の一部を露出する開口部を有する第1の有機樹脂層を形成し、前記第1の有機樹脂層及び前記素子基板上に第1の繊維体を形成した後、加熱して、前記素子基板上に前記第1の繊維体及び前記第1の繊維体に含浸された第1の有機樹脂を含む第1の封止層を形成し、前記第1の有機樹脂層の開口部に前記第1の配線に接続する第1の接続端子を形成し、
前記第1の封止層に第1のアンテナを有する基板を貼り付けると共に、前記第1の接続端子及び前記第1のアンテナを電気的に接続し、
前記素子基板の他方の面に第2の有機樹脂層を形成し、前記第2の有機樹脂層及び前記素子基板上に第2の繊維体を設けた後、加熱して、前記素子基板上に前記第2の繊維体及び前記第2の繊維体に含浸された第2の有機樹脂を含む第2の封止層を形成した後、前記第2の配線の一部を露出する開口部を形成し、前記第2の有機樹脂層の開口部に前記第2の配線に接続する第2の接続端子を形成し、
前記第2の封止層に第2のアンテナを有する基板を貼り付けると共に、前記第2の接続端子及び前記第2のアンテナを電気的に接続することを特徴とする半導体装置の作製方法。 - 請求項1乃至11のいずれか一項において、前記単結晶半導体基板を用いて形成された能動素子は、MOSトランジスタ、不揮発性記憶素子、またはダイオードの一つ以上であることを特徴とする半導体装置の作製方法。
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KR102135275B1 (ko) * | 2013-07-29 | 2020-07-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조 방법 및 이를 포함하는 표시 장치 |
KR101821861B1 (ko) | 2015-10-15 | 2018-01-25 | 한국과학기술원 | 섬유 기판을 이용하는 착용 가능한 메모리 및 그 제작 방법 |
Also Published As
Publication number | Publication date |
---|---|
US7785933B2 (en) | 2010-08-31 |
CN101276767B (zh) | 2012-12-12 |
CN101276767A (zh) | 2008-10-01 |
KR20080087693A (ko) | 2008-10-01 |
US20080311706A1 (en) | 2008-12-18 |
EP1976000A3 (en) | 2009-05-13 |
TW200903720A (en) | 2009-01-16 |
EP1976000A2 (en) | 2008-10-01 |
KR101466594B1 (ko) | 2014-11-28 |
TWI442513B (zh) | 2014-06-21 |
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