JP2008251569A - 半導体装置とその製造方法、及びテンプレート基板 - Google Patents
半導体装置とその製造方法、及びテンプレート基板 Download PDFInfo
- Publication number
- JP2008251569A JP2008251569A JP2007087127A JP2007087127A JP2008251569A JP 2008251569 A JP2008251569 A JP 2008251569A JP 2007087127 A JP2007087127 A JP 2007087127A JP 2007087127 A JP2007087127 A JP 2007087127A JP 2008251569 A JP2008251569 A JP 2008251569A
- Authority
- JP
- Japan
- Prior art keywords
- zno
- layer
- substrate
- semiconductor device
- zinc silicate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02403—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
Abstract
【解決手段】半導体装置は、Liを含むZnO系基板1と、その上方に形成されLiの拡散を抑制するジンクシリケート層3とを有する。このジンクシリケート層を介して、n型ZnO層11、ZnO井戸層とZnMgO障壁層からなる量子井戸構造を有する発光層12、及びp型ZnO層13がZnO系基板に対してエピタキシャル成長される。
【選択図】図4
Description
に関する。
2 酸化シリコン層
3 ジンクシリケート層
4 バッファ層
5 ZnO層
11 n型ZnO層
12 発光層
12b 障壁層
12w 井戸層
13 p型ZnO層
21 n側電極
22 p側電極
23 ボンディング電極
101 真空チャンバ
102 Znソースガン
103 Oソースガン
104 Gaソースガン
105 Nソースガン
106 Mgソースガン
107 基板ヒータ
108 基板
109 (RHEED用の)ガン
110 (RHEED用の)スクリーン
111 真空ポンプ
Claims (9)
- Liを含むZnO系基板と、
前記ZnO系基板の上方に形成されたジンクシリケート層と、
前記ジンクシリケート層を介して、前記ZnO系基板に対してエピタキシャル成長した半導体層と
を有する半導体装置。 - 前記半導体層が、ZnO系半導体層である請求項1に記載の半導体装置。
- (a)Liを含むZnO系基板を準備する工程と、
(b)前記ZnO系基板の上方にジンクシリケート層を形成する工程と、
(c)前記ジンクシリケート層を介して、半導体層を前記ZnO系基板に対してエピタキシャル成長させる工程と
を有する半導体装置の製造方法。 - 前記工程(b)は、(b1)前記ZnO系基板上に酸化シリコン層を形成する工程と、(b2)前記酸化シリコン層が形成された前記ZnO系基板に熱処理を施す工程とを含む請求項3に記載の半導体装置の製造方法。
- 前記工程(b1)は、前記ZnO系基板上にコロイダルシリカを塗布して酸化シリコン層を形成する請求項4に記載の半導体装置の製造方法。
- 前記工程(b2)は、800℃以上で熱処理を行う請求項4または5に記載の半導体装置の製造方法。
- 前記工程(b2)は、前記酸化シリコン層の表面の[11−20]方向及び[10−10]方向のRHEEDパタンを観察する工程を含み、(1×3)再構築パタンが得られるまで熱処理を行う請求項4〜6のいずれか1項に記載の半導体装置の製造方法。
- 前記工程(c)で、前記半導体層がZnO系半導体層である請求項3〜7のいずれか1項に記載の半導体装置の製造方法。
- Liを含むZnO系基板と、
前記ZnO系基板の上方に形成されたジンクシリケート層と
を有するテンプレート基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007087127A JP4953879B2 (ja) | 2007-03-29 | 2007-03-29 | 半導体装置とその製造方法、及びテンプレート基板 |
US12/079,617 US7858436B2 (en) | 2007-03-29 | 2008-03-27 | Semiconductor device, its manufacture method and template substrate |
US12/950,817 US8154018B2 (en) | 2007-03-29 | 2010-11-19 | Semiconductor device, its manufacture method and template substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007087127A JP4953879B2 (ja) | 2007-03-29 | 2007-03-29 | 半導体装置とその製造方法、及びテンプレート基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008251569A true JP2008251569A (ja) | 2008-10-16 |
JP4953879B2 JP4953879B2 (ja) | 2012-06-13 |
Family
ID=39871304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007087127A Expired - Fee Related JP4953879B2 (ja) | 2007-03-29 | 2007-03-29 | 半導体装置とその製造方法、及びテンプレート基板 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7858436B2 (ja) |
JP (1) | JP4953879B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010219320A (ja) * | 2009-03-17 | 2010-09-30 | Toshiba Corp | 発光素子の製造方法及び発光素子 |
JP2011096884A (ja) * | 2009-10-30 | 2011-05-12 | Stanley Electric Co Ltd | ZnO系化合物半導体の製造方法及び半導体発光素子 |
JP2011124330A (ja) * | 2009-12-09 | 2011-06-23 | Stanley Electric Co Ltd | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
JP2014030019A (ja) * | 2013-08-09 | 2014-02-13 | Stanley Electric Co Ltd | 酸化亜鉛系半導体発光素子及び単結晶層付き基板 |
JP2017098719A (ja) * | 2015-11-20 | 2017-06-01 | 信越化学工業株式会社 | 接合基板及びこれを用いた弾性表面波デバイス |
RU2639605C2 (ru) * | 2012-06-29 | 2017-12-21 | Люмиледс Холдинг Б.В. | Светоизлучающий полупроводниковый прибор на основе элементов ii-vi групп |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2981090B1 (fr) * | 2011-10-10 | 2014-03-14 | Commissariat Energie Atomique | Procede de preparation d'oxyde de zinc zno de type p ou de znmgo de type p. |
KR20210008427A (ko) | 2018-06-07 | 2021-01-21 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 반도체 레이어 형성을 위한 방법 및 재료 증착 시스템 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61284049A (ja) * | 1985-06-07 | 1986-12-15 | Matsushita Electric Ind Co Ltd | 螢光体表示板 |
JPH04209693A (ja) * | 1990-09-25 | 1992-07-31 | Gunze Ltd | Zn↓2SiO↓4:Mn薄膜を発光層として用いる交流駆動薄膜エレクトロルミネッセンス素子の製造方法 |
JPH0582258A (ja) * | 1990-09-25 | 1993-04-02 | Gunze Ltd | エレクトロルミネツセンス素子の製造法 |
JPH06128088A (ja) * | 1992-10-16 | 1994-05-10 | Ngk Insulators Ltd | 酸化亜鉛単結晶の育成方法 |
JP2004315361A (ja) * | 2003-04-03 | 2004-11-11 | Tokyo Denpa Co Ltd | 酸化亜鉛単結晶 |
JP2004363382A (ja) * | 2003-06-05 | 2004-12-24 | Sharp Corp | 酸化物半導体発光素子およびその製造方法 |
JP2005039131A (ja) * | 2003-07-17 | 2005-02-10 | National Institute For Materials Science | 酸化亜鉛単結晶ウエファーの製造法 |
JP2007001787A (ja) * | 2005-06-21 | 2007-01-11 | Stanley Electric Co Ltd | ZnO基板の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3664867A (en) * | 1969-11-24 | 1972-05-23 | North American Rockwell | Composite structure of zinc oxide deposited epitaxially on sapphire |
US6674098B1 (en) * | 1999-07-26 | 2004-01-06 | National Institute Of Advanced Industrial Science And Technology | ZnO compound semiconductor light emitting element |
JP3424814B2 (ja) * | 1999-08-31 | 2003-07-07 | スタンレー電気株式会社 | ZnO結晶構造及びそれを用いた半導体装置 |
JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US6955985B2 (en) * | 2002-06-28 | 2005-10-18 | Kopin Corporation | Domain epitaxy for thin film growth |
US7723154B1 (en) * | 2005-10-19 | 2010-05-25 | North Carolina State University | Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities |
US7432526B2 (en) * | 2005-12-20 | 2008-10-07 | Palo Alto Research Center Incorporated | Surface-passivated zinc-oxide based sensor |
-
2007
- 2007-03-29 JP JP2007087127A patent/JP4953879B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-27 US US12/079,617 patent/US7858436B2/en not_active Expired - Fee Related
-
2010
- 2010-11-19 US US12/950,817 patent/US8154018B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61284049A (ja) * | 1985-06-07 | 1986-12-15 | Matsushita Electric Ind Co Ltd | 螢光体表示板 |
JPH04209693A (ja) * | 1990-09-25 | 1992-07-31 | Gunze Ltd | Zn↓2SiO↓4:Mn薄膜を発光層として用いる交流駆動薄膜エレクトロルミネッセンス素子の製造方法 |
JPH0582258A (ja) * | 1990-09-25 | 1993-04-02 | Gunze Ltd | エレクトロルミネツセンス素子の製造法 |
JPH06128088A (ja) * | 1992-10-16 | 1994-05-10 | Ngk Insulators Ltd | 酸化亜鉛単結晶の育成方法 |
JP2004315361A (ja) * | 2003-04-03 | 2004-11-11 | Tokyo Denpa Co Ltd | 酸化亜鉛単結晶 |
JP2004363382A (ja) * | 2003-06-05 | 2004-12-24 | Sharp Corp | 酸化物半導体発光素子およびその製造方法 |
JP2005039131A (ja) * | 2003-07-17 | 2005-02-10 | National Institute For Materials Science | 酸化亜鉛単結晶ウエファーの製造法 |
JP2007001787A (ja) * | 2005-06-21 | 2007-01-11 | Stanley Electric Co Ltd | ZnO基板の製造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010219320A (ja) * | 2009-03-17 | 2010-09-30 | Toshiba Corp | 発光素子の製造方法及び発光素子 |
US8629468B2 (en) | 2009-03-17 | 2014-01-14 | Kabushiki Kaisha Toshiba | Method for manufacturing light emitting device and light emitting device |
JP2011096884A (ja) * | 2009-10-30 | 2011-05-12 | Stanley Electric Co Ltd | ZnO系化合物半導体の製造方法及び半導体発光素子 |
JP2011124330A (ja) * | 2009-12-09 | 2011-06-23 | Stanley Electric Co Ltd | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
RU2639605C2 (ru) * | 2012-06-29 | 2017-12-21 | Люмиледс Холдинг Б.В. | Светоизлучающий полупроводниковый прибор на основе элементов ii-vi групп |
JP2014030019A (ja) * | 2013-08-09 | 2014-02-13 | Stanley Electric Co Ltd | 酸化亜鉛系半導体発光素子及び単結晶層付き基板 |
JP2017098719A (ja) * | 2015-11-20 | 2017-06-01 | 信越化学工業株式会社 | 接合基板及びこれを用いた弾性表面波デバイス |
Also Published As
Publication number | Publication date |
---|---|
US20110073857A1 (en) | 2011-03-31 |
US20080258142A1 (en) | 2008-10-23 |
US7858436B2 (en) | 2010-12-28 |
JP4953879B2 (ja) | 2012-06-13 |
US8154018B2 (en) | 2012-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4953879B2 (ja) | 半導体装置とその製造方法、及びテンプレート基板 | |
JP6092586B2 (ja) | ZnO系半導体層とその製造方法、及びZnO系半導体発光素子の製造方法 | |
KR101458629B1 (ko) | ZnO계 화합물 반도체 층의 제조방법 | |
JP2004304166A (ja) | ZnO系半導体素子 | |
JP5507234B2 (ja) | ZnO系半導体装置及びその製造方法 | |
KR20120039324A (ko) | 질화갈륨계 반도체 발광소자 및 그 제조방법 | |
JP6100590B2 (ja) | p型ZnO系半導体層の製造方法、ZnO系半導体素子の製造方法、及び、n型ZnO系半導体積層構造 | |
JP5506221B2 (ja) | ZnO系半導体素子の製造方法 | |
JP6017243B2 (ja) | ZnO系半導体素子、及び、ZnO系半導体素子の製造方法 | |
JP5373402B2 (ja) | ZnO系半導体発光素子の製造方法 | |
JP2007251027A (ja) | ZnO系化合物半導体、それを用いた発光素子及びそれらの製造方法 | |
JP2007049032A (ja) | 酸化物結晶の成長装置及びそれを使用した製造方法 | |
JP6100591B2 (ja) | p型ZnO系半導体層の製造方法、ZnO系半導体素子の製造方法、及び、n型ZnO系半導体積層構造 | |
JP6155118B2 (ja) | p型ZnO系半導体層の製造方法、ZnO系半導体素子の製造方法、及び、n型ZnO系半導体積層構造 | |
JP5426315B2 (ja) | ZnO系化合物半導体素子 | |
JP6231841B2 (ja) | p型ZnO系半導体層の製造方法、及び、ZnO系半導体素子の製造方法 | |
JP6092657B2 (ja) | p型ZnO系半導体層の製造方法、ZnO系半導体素子の製造方法、及び、n型ZnO系半導体積層構造 | |
JP2015032680A (ja) | p型ZnO系半導体層の製造方法、及び、ZnO系半導体素子の製造方法 | |
JP2008160057A (ja) | 半導体発光素子の製造方法 | |
JP5912968B2 (ja) | p型ZnO系半導体膜の製造方法、及び、ZnO系半導体素子の製造方法 | |
JP2015115566A (ja) | p型ZnO系半導体層、ZnO系半導体素子、p型ZnO系半導体層の製造方法、及び、ZnO系半導体素子の製造方法 | |
JP2014027134A (ja) | p型ZnO系半導体単結晶層、及び、ZnO系半導体素子 | |
JP5952120B2 (ja) | p型ZnO系半導体層の製造方法、及び、ZnO系半導体素子の製造方法 | |
JP2013084859A (ja) | ZnO系半導体層の製造方法、ZnO系半導体発光素子の製造方法、及びZnO系半導体発光素子 | |
JP2013046023A (ja) | ZnO系半導体層の製造方法及びZnO系半導体発光素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100305 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120313 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120313 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4953879 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150323 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |