JP2008239388A - 圧電磁器組成物 - Google Patents
圧電磁器組成物 Download PDFInfo
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Abstract
【解決手段】 菱面晶系ペロブスカイト構造を有する第1の化合物と、正方晶系ペロブスカイト構造を有する第2の化合物と、第3の化合物とを含有する固溶体に相当する組成を有する圧電磁器組成物である。第3の化合物は、Biを第1の構成元素、Mnを第2の構成元素、4価金属元素または5価金属元素を第3の構成元素として含む複合酸化物である。4価金属元素は、Ti、Zr、Hf、Snから選ばれる少なくとも1種である。5価金属元素は、Nb、Ta、Sbから選ばれる少なくとも1種である。
【選択図】 なし
Description
本実験では、チタン酸ナトリウムビスマス(NBT)を第1の化合物、チタン酸カリウムビスマス(KBT)を第2の化合物、マンガン・チタン酸ビスマス(BMT)を第3の化合物とする固溶体に相当する組成を有する圧電磁器組成物からなる圧電磁器の作製を試みた。
Ti1/2 )O3とした。すなわち、NBT及びKBT、さらにはこれらを合わせたものにおいて、A/B比=0.99である。なお、表1中、*印を付した試料1−1〜試料1−12は、第3の化合物であるマンガン・チタン酸ビスマス(BMT)を含んでおらず、比較例に相当するものである。
第3の化合物として、マンガン・チタン酸ビスマス(BMT)の代わりにマンガン・ジルコニウム酸ビスマス(BMZ)(第3の構成元素が4価金属元素であるZr)を用い、他は実験1と同様にして圧電磁器(試料2−1,2−2)を作製した。また、第3の化合物として、マンガン・チタン酸ビスマス(BMT)の代わりにマンガン・ハフニウム酸ビスマス(BMHf)(第3の構成元素が4価金属元素であるHf)を用い、他は実験1と同様にして圧電磁器(試料2−3,2−4)を作製した。さらに、第3の化合物として、マンガン・チタン酸ビスマス(BMT)の代わりにマンガン・錫酸ビスマス(BMSn)(第3の構成元素が4価金属元素であるSn)を用い、他は実験1と同様にして圧電磁器(試料2−5,2−6)を作製した。これら圧電磁器について、実験1と同様の手法により比誘電率εd、広がり方向の電気機械結合係数kr、d33、及びQmを測定した。作製した圧電磁器の組成(各化合物に換算した組成:モル%)及び特性の測定結果を表2−1〜表2−3に示す。
本実験例では、NBTとKBTのA/B比を変え、他は実験1と同様にして圧電磁器を作製した(試料3−1〜3−7)。同様に、BMTを含まない場合についても、NBTとKBTのA/B比を変え、他は実験1と同様にして圧電磁器を作製した(試料3−8〜3−12:比較例に相当)。なお、A/B比はNBT及びKBTについての値であるが、NBTとKBTのA/B比が同じ値であることから、NBTとKBTを合わせたものについても同様のA/B比となる。
本実験では、第2の化合物をチタン酸バリウム(BT)に変え、他は実験1と同様に圧電磁器を作製し、 作製した圧電磁器について、実験1と同様の手法により比誘電率εd、広がり方向の電気機械結合係数kr、d33、及びQmを測定した。作製した圧電磁器の組成(各化合物に換算した組成:モル%)、及び特性の測定結果を表4に示す。
第3の化合物として、マンガン・チタン酸ビスマス(BMT)の代わりにマンガン・ニオブ酸ビスマス(BMN)(第3の構成元素が5価金属元素であるNb)を用い、他は実験1と同様にして圧電磁器(試料5−1〜5−68)を作製した。なお、前記試料のうち試料5−1〜5−12(*印を付した試料)は、第3の化合物であるBMNを含んでおらず、比較例に相当する。
第3の化合物として、マンガン・ニオブ酸ビスマス(BMN)の代わりにマンガン・タンタル酸ビスマス(BMTA)(第3の構成元素が5価金属元素であるTa)を用い、他は実験1と同様にして圧電磁器(試料6−1,6−2)を作製した。さらに、第3の化合物として、マンガン・ニオブ酸ビスマス(BMN)の代わりにマンガン・アンチモン酸ビスマス(BMSb)(第3の構成元素が5価金属元素であるSb)を用い、他は実験1と同様にして圧電磁器(試料6−3,6−4)を作製した。これら圧電磁器について、実験1と同様の手法により比誘電率εd、広がり方向の電気機械結合係数kr、d33、及びQmを測定した。作製した圧電磁器の組成(各化合物に換算した組成:モル%)及び特性の測定結果を表6−1及び表6−2に示す。
本実験例では、NBTとKBTのA/B比を変え、他は実験5と同様にして圧電磁器を作製した(試料7−1〜7−7)。BMNを含まない場合についても、NBTとKBTのA/B比を変え、同様にして圧電磁器を作製した(試料7−8〜7−12:比較例に相当)。なお、A/B比はNBT及びKBTについての値であるが、NBTとKBTのA/B比が同じ値であることから、NBTとKBTを合わせたものについても同様のA/B比となる。
本実験では、第2の化合物をチタン酸バリウム(BT)に変え、他は実験5と同様に圧電磁器を作製し、 作製した圧電磁器について、実験1と同様の手法により比誘電率εd、広がり方向の電気機械結合係数kr、d33、及びQmを測定した。作製した圧電磁器の組成(各化合物に換算した組成:モル%)、及び特性の測定結果を表8に示す。
Claims (8)
- 菱面晶系ペロブスカイト構造を有する第1の化合物と、正方晶系ペロブスカイト構造を有する第2の化合物と、Bi、Mn、4価金属元素または5価金属元素、及び酸素を含む第3の化合物とから構成される固溶体に相当する組成を有する成分を含有することを特徴とする圧電磁器組成物。
- 前記4価金属元素がTi、Zr、Hf、Snから選ばれる少なくとも1種であることを特徴とする請求項1記載の圧電磁器組成物。
- 前記5価金属元素がNb、Ta、Sbから選ばれる少なくとも1種であることを特徴とする請求項1記載の圧電磁器組成物。
- 前記第1の化合物がチタン酸ナトリウムビスマスであることを特徴とする請求項1から3のいずれか1項記載の圧電磁器組成物。
- 前記第2の化合物がチタン酸カリウムビスマスであることを特徴とする請求項1から4のいずれか1項記載の圧電磁器組成物。
- 一般式[(NaxKy)0.5Bi(0.5x+0.5y+z)][Ti(x+y)(MnsMe(1−s))z]O3(ただし、式中、MeはTi、Zr、Hf、Sn、Nb、Ta、Sbから選ばれる少なくとも1種を表す。また、式中Sは、Me=Ti、Zr、Hf、Snの場合1/2、Me=Nb、Ta、Sbの場合2/3である。)で表され、前記第1の化合物のモル比に相当するx、前記第2の化合物のモル比に相当するy、前記第3の化合物のモル比に相当するzが、0.76≦x≦0.91、0.08≦y≦0.23、0<z≦0.05、x+y+z=1であることを特徴とする請求項5記載の圧電磁器組成物。
- 前記第2の化合物がチタン酸バリウムであることを特徴とする請求項1から4のいずれか1項記載の圧電磁器組成物。
- 一般式[Na0.5xBayBi(0.5x+z)][Ti(x+y)(MnsMe(1−s))z]O3(ただし、式中、MeはTi、Zr、Hf、Sn、Nb、Ta、Sbから選ばれる少なくとも1種を表す。また、式中Sは、Me=Ti、Zr、Hf、Snの場合1/2、Me=Nb、Ta、Sbの場合2/3である。)で表され、前記第1の化合物のモル比に相当するx、前記第2の化合物のモル比に相当するy、前記第3の化合物のモル比に相当するzが、0.85≦x≦0.99、0<y≦0.10、0<z≦0.05、x+y+z=1であることを特徴とする請求項7記載の圧電磁器組成物。
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