JP2008211215A - マルチフィンガートランジスタ - Google Patents

マルチフィンガートランジスタ Download PDF

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Publication number
JP2008211215A
JP2008211215A JP2008041673A JP2008041673A JP2008211215A JP 2008211215 A JP2008211215 A JP 2008211215A JP 2008041673 A JP2008041673 A JP 2008041673A JP 2008041673 A JP2008041673 A JP 2008041673A JP 2008211215 A JP2008211215 A JP 2008211215A
Authority
JP
Japan
Prior art keywords
finger
gate
wiring
finger transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008041673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008211215A5 (enExample
Inventor
Han-Soo Kim
漢 洙 金
Je-Don Kim
濟 敦 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2008211215A publication Critical patent/JP2008211215A/ja
Publication of JP2008211215A5 publication Critical patent/JP2008211215A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008041673A 2007-02-27 2008-02-22 マルチフィンガートランジスタ Pending JP2008211215A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070019395A KR100873892B1 (ko) 2007-02-27 2007-02-27 멀티 핑거 트랜지스터

Publications (2)

Publication Number Publication Date
JP2008211215A true JP2008211215A (ja) 2008-09-11
JP2008211215A5 JP2008211215A5 (enExample) 2011-03-31

Family

ID=39714883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008041673A Pending JP2008211215A (ja) 2007-02-27 2008-02-22 マルチフィンガートランジスタ

Country Status (3)

Country Link
US (1) US20080203444A1 (enExample)
JP (1) JP2008211215A (enExample)
KR (1) KR100873892B1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012134251A (ja) * 2010-12-20 2012-07-12 Samsung Electro-Mechanics Co Ltd 高周波半導体スイッチ
JP2016072532A (ja) * 2014-09-30 2016-05-09 サンケン電気株式会社 半導体素子
JP2016154182A (ja) * 2015-02-20 2016-08-25 ローム株式会社 半導体装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102270659B (zh) * 2011-08-11 2012-09-26 中国科学院微电子研究所 一种多栅指GaN HEMTs
KR101299799B1 (ko) * 2011-10-24 2013-08-23 숭실대학교산학협력단 멀티 게이트 트랜지스터
KR101977277B1 (ko) * 2012-10-29 2019-08-28 엘지이노텍 주식회사 전력 반도체 소자
US9269711B2 (en) * 2013-07-01 2016-02-23 Infineon Technologies Austria Ag Semiconductor device
KR101666752B1 (ko) 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101692625B1 (ko) 2015-06-18 2017-01-03 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101666753B1 (ko) * 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
CN105742363B (zh) * 2016-03-21 2019-01-04 上海华虹宏力半导体制造有限公司 射频开关器件及其形成方法
KR102727563B1 (ko) * 2020-03-04 2024-11-06 주식회사 디비하이텍 알에프 스위치 소자
CN111983411B (zh) * 2020-07-10 2022-12-27 中国电子科技集团公司第十三研究所 多指栅型晶体管热阻测试方法、装置及终端设备
KR102813446B1 (ko) * 2020-09-08 2025-05-27 삼성전자주식회사 모스 트랜지스터들을 포함하는 집적 회로 소자
CN115088081B (zh) * 2020-12-29 2025-01-28 伏达半导体(合肥)股份有限公司 感应超结晶体管
US12501717B2 (en) * 2022-05-27 2025-12-16 Vanguard International Semiconductor Corporation Semiconductor structure with a gate and a shielding structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004096118A (ja) * 2003-09-12 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法
JP2004158813A (ja) * 2002-09-11 2004-06-03 Toshiba Corp 半導体装置及びその製造方法
JP2004335778A (ja) * 2003-05-08 2004-11-25 Toshiba Corp 半導体装置
JP2005064462A (ja) * 2003-07-28 2005-03-10 Nec Electronics Corp マルチフィンガー型静電気放電保護素子
JP2005191031A (ja) * 2003-12-24 2005-07-14 Renesas Technology Corp 横方向拡散型電界効果型半導体装置
JP2005354014A (ja) * 2004-06-14 2005-12-22 Nec Electronics Corp 静電気放電保護素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949139A (en) * 1988-09-09 1990-08-14 Atmel Corporation Transistor construction for low noise output driver
US5789791A (en) 1996-08-27 1998-08-04 National Semiconductor Corporation Multi-finger MOS transistor with reduced gate resistance
US6002156A (en) * 1997-09-16 1999-12-14 Winbond Electronics Corp. Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
US7689946B2 (en) * 2006-10-19 2010-03-30 International Business Machines Corporation High-performance FET device layout

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004158813A (ja) * 2002-09-11 2004-06-03 Toshiba Corp 半導体装置及びその製造方法
JP2004335778A (ja) * 2003-05-08 2004-11-25 Toshiba Corp 半導体装置
JP2005064462A (ja) * 2003-07-28 2005-03-10 Nec Electronics Corp マルチフィンガー型静電気放電保護素子
JP2004096118A (ja) * 2003-09-12 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法
JP2005191031A (ja) * 2003-12-24 2005-07-14 Renesas Technology Corp 横方向拡散型電界効果型半導体装置
JP2005354014A (ja) * 2004-06-14 2005-12-22 Nec Electronics Corp 静電気放電保護素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012134251A (ja) * 2010-12-20 2012-07-12 Samsung Electro-Mechanics Co Ltd 高周波半導体スイッチ
JP2016072532A (ja) * 2014-09-30 2016-05-09 サンケン電気株式会社 半導体素子
JP2016154182A (ja) * 2015-02-20 2016-08-25 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
US20080203444A1 (en) 2008-08-28
KR100873892B1 (ko) 2008-12-15
KR20080079377A (ko) 2008-09-01

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