KR100873892B1 - 멀티 핑거 트랜지스터 - Google Patents

멀티 핑거 트랜지스터 Download PDF

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Publication number
KR100873892B1
KR100873892B1 KR1020070019395A KR20070019395A KR100873892B1 KR 100873892 B1 KR100873892 B1 KR 100873892B1 KR 1020070019395 A KR1020070019395 A KR 1020070019395A KR 20070019395 A KR20070019395 A KR 20070019395A KR 100873892 B1 KR100873892 B1 KR 100873892B1
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KR
South Korea
Prior art keywords
gate
finger
active regions
regions
transistor
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KR1020070019395A
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English (en)
Korean (ko)
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KR20080079377A (ko
Inventor
김한수
김제돈
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삼성전자주식회사
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Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020070019395A priority Critical patent/KR100873892B1/ko
Priority to US12/071,339 priority patent/US20080203444A1/en
Priority to JP2008041673A priority patent/JP2008211215A/ja
Publication of KR20080079377A publication Critical patent/KR20080079377A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020070019395A 2007-02-27 2007-02-27 멀티 핑거 트랜지스터 Expired - Fee Related KR100873892B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020070019395A KR100873892B1 (ko) 2007-02-27 2007-02-27 멀티 핑거 트랜지스터
US12/071,339 US20080203444A1 (en) 2007-02-27 2008-02-20 Multi-finger transistor and method of manufacturing the same
JP2008041673A JP2008211215A (ja) 2007-02-27 2008-02-22 マルチフィンガートランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070019395A KR100873892B1 (ko) 2007-02-27 2007-02-27 멀티 핑거 트랜지스터

Publications (2)

Publication Number Publication Date
KR20080079377A KR20080079377A (ko) 2008-09-01
KR100873892B1 true KR100873892B1 (ko) 2008-12-15

Family

ID=39714883

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070019395A Expired - Fee Related KR100873892B1 (ko) 2007-02-27 2007-02-27 멀티 핑거 트랜지스터

Country Status (3)

Country Link
US (1) US20080203444A1 (enExample)
JP (1) JP2008211215A (enExample)
KR (1) KR100873892B1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9755068B2 (en) 2015-06-18 2017-09-05 Dongbu Hitek Co., Ltd. Semiconductor device and radio frequency module formed on high resistivity substrate
US10217740B2 (en) 2015-06-18 2019-02-26 Db Hitek Co., Ltd Semiconductor device and radio frequency module formed on high resistivity substrate
US10325867B2 (en) 2015-06-18 2019-06-18 Db Hitek Co., Ltd Semiconductor device and radio frequency module formed on high resistivity substrate

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012134251A (ja) * 2010-12-20 2012-07-12 Samsung Electro-Mechanics Co Ltd 高周波半導体スイッチ
CN102270659B (zh) * 2011-08-11 2012-09-26 中国科学院微电子研究所 一种多栅指GaN HEMTs
KR101299799B1 (ko) * 2011-10-24 2013-08-23 숭실대학교산학협력단 멀티 게이트 트랜지스터
KR101977277B1 (ko) * 2012-10-29 2019-08-28 엘지이노텍 주식회사 전력 반도체 소자
US9269711B2 (en) * 2013-07-01 2016-02-23 Infineon Technologies Austria Ag Semiconductor device
JP2016072532A (ja) * 2014-09-30 2016-05-09 サンケン電気株式会社 半導体素子
JP6530199B2 (ja) * 2015-02-20 2019-06-12 ローム株式会社 半導体装置
CN105742363B (zh) * 2016-03-21 2019-01-04 上海华虹宏力半导体制造有限公司 射频开关器件及其形成方法
KR102727563B1 (ko) * 2020-03-04 2024-11-06 주식회사 디비하이텍 알에프 스위치 소자
CN111983411B (zh) * 2020-07-10 2022-12-27 中国电子科技集团公司第十三研究所 多指栅型晶体管热阻测试方法、装置及终端设备
KR102813446B1 (ko) * 2020-09-08 2025-05-27 삼성전자주식회사 모스 트랜지스터들을 포함하는 집적 회로 소자
CN115088081B (zh) * 2020-12-29 2025-01-28 伏达半导体(合肥)股份有限公司 感应超结晶体管
US12501717B2 (en) * 2022-05-27 2025-12-16 Vanguard International Semiconductor Corporation Semiconductor structure with a gate and a shielding structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789791A (en) 1996-08-27 1998-08-04 National Semiconductor Corporation Multi-finger MOS transistor with reduced gate resistance

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949139A (en) * 1988-09-09 1990-08-14 Atmel Corporation Transistor construction for low noise output driver
US6002156A (en) * 1997-09-16 1999-12-14 Winbond Electronics Corp. Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
JP3981028B2 (ja) * 2002-09-11 2007-09-26 株式会社東芝 半導体装置
JP2004335778A (ja) * 2003-05-08 2004-11-25 Toshiba Corp 半導体装置
JP2005064462A (ja) * 2003-07-28 2005-03-10 Nec Electronics Corp マルチフィンガー型静電気放電保護素子
JP2004096118A (ja) * 2003-09-12 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法
JP2005191031A (ja) * 2003-12-24 2005-07-14 Renesas Technology Corp 横方向拡散型電界効果型半導体装置
JP4854934B2 (ja) * 2004-06-14 2012-01-18 ルネサスエレクトロニクス株式会社 静電気放電保護素子
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
US7689946B2 (en) * 2006-10-19 2010-03-30 International Business Machines Corporation High-performance FET device layout

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789791A (en) 1996-08-27 1998-08-04 National Semiconductor Corporation Multi-finger MOS transistor with reduced gate resistance

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9755068B2 (en) 2015-06-18 2017-09-05 Dongbu Hitek Co., Ltd. Semiconductor device and radio frequency module formed on high resistivity substrate
US10217740B2 (en) 2015-06-18 2019-02-26 Db Hitek Co., Ltd Semiconductor device and radio frequency module formed on high resistivity substrate
US10325867B2 (en) 2015-06-18 2019-06-18 Db Hitek Co., Ltd Semiconductor device and radio frequency module formed on high resistivity substrate

Also Published As

Publication number Publication date
US20080203444A1 (en) 2008-08-28
JP2008211215A (ja) 2008-09-11
KR20080079377A (ko) 2008-09-01

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