JP2008211215A5 - - Google Patents

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Publication number
JP2008211215A5
JP2008211215A5 JP2008041673A JP2008041673A JP2008211215A5 JP 2008211215 A5 JP2008211215 A5 JP 2008211215A5 JP 2008041673 A JP2008041673 A JP 2008041673A JP 2008041673 A JP2008041673 A JP 2008041673A JP 2008211215 A5 JP2008211215 A5 JP 2008211215A5
Authority
JP
Japan
Prior art keywords
finger
gate
transistor according
finger transistor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008041673A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008211215A (ja
Filing date
Publication date
Priority claimed from KR1020070019395A external-priority patent/KR100873892B1/ko
Application filed filed Critical
Publication of JP2008211215A publication Critical patent/JP2008211215A/ja
Publication of JP2008211215A5 publication Critical patent/JP2008211215A5/ja
Pending legal-status Critical Current

Links

JP2008041673A 2007-02-27 2008-02-22 マルチフィンガートランジスタ Pending JP2008211215A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070019395A KR100873892B1 (ko) 2007-02-27 2007-02-27 멀티 핑거 트랜지스터

Publications (2)

Publication Number Publication Date
JP2008211215A JP2008211215A (ja) 2008-09-11
JP2008211215A5 true JP2008211215A5 (enExample) 2011-03-31

Family

ID=39714883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008041673A Pending JP2008211215A (ja) 2007-02-27 2008-02-22 マルチフィンガートランジスタ

Country Status (3)

Country Link
US (1) US20080203444A1 (enExample)
JP (1) JP2008211215A (enExample)
KR (1) KR100873892B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012134251A (ja) * 2010-12-20 2012-07-12 Samsung Electro-Mechanics Co Ltd 高周波半導体スイッチ
CN102270659B (zh) * 2011-08-11 2012-09-26 中国科学院微电子研究所 一种多栅指GaN HEMTs
KR101299799B1 (ko) * 2011-10-24 2013-08-23 숭실대학교산학협력단 멀티 게이트 트랜지스터
KR101977277B1 (ko) * 2012-10-29 2019-08-28 엘지이노텍 주식회사 전력 반도체 소자
US9269711B2 (en) * 2013-07-01 2016-02-23 Infineon Technologies Austria Ag Semiconductor device
JP2016072532A (ja) * 2014-09-30 2016-05-09 サンケン電気株式会社 半導体素子
JP6530199B2 (ja) * 2015-02-20 2019-06-12 ローム株式会社 半導体装置
KR101692625B1 (ko) 2015-06-18 2017-01-03 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101666752B1 (ko) 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
KR101666753B1 (ko) 2015-06-18 2016-10-14 주식회사 동부하이텍 고비저항 기판 상에 형성된 반도체 소자 및 무선 주파수 모듈
CN105742363B (zh) * 2016-03-21 2019-01-04 上海华虹宏力半导体制造有限公司 射频开关器件及其形成方法
KR102727563B1 (ko) * 2020-03-04 2024-11-06 주식회사 디비하이텍 알에프 스위치 소자
CN111983411B (zh) * 2020-07-10 2022-12-27 中国电子科技集团公司第十三研究所 多指栅型晶体管热阻测试方法、装置及终端设备
KR102813446B1 (ko) * 2020-09-08 2025-05-27 삼성전자주식회사 모스 트랜지스터들을 포함하는 집적 회로 소자
CN115088081B (zh) * 2020-12-29 2025-01-28 伏达半导体(合肥)股份有限公司 感应超结晶体管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949139A (en) * 1988-09-09 1990-08-14 Atmel Corporation Transistor construction for low noise output driver
US5789791A (en) 1996-08-27 1998-08-04 National Semiconductor Corporation Multi-finger MOS transistor with reduced gate resistance
US6002156A (en) * 1997-09-16 1999-12-14 Winbond Electronics Corp. Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering
JP3981028B2 (ja) * 2002-09-11 2007-09-26 株式会社東芝 半導体装置
JP2004335778A (ja) * 2003-05-08 2004-11-25 Toshiba Corp 半導体装置
JP2005064462A (ja) * 2003-07-28 2005-03-10 Nec Electronics Corp マルチフィンガー型静電気放電保護素子
JP2004096118A (ja) * 2003-09-12 2004-03-25 Hitachi Ltd 半導体装置およびその製造方法
JP2005191031A (ja) * 2003-12-24 2005-07-14 Renesas Technology Corp 横方向拡散型電界効果型半導体装置
JP4854934B2 (ja) * 2004-06-14 2012-01-18 ルネサスエレクトロニクス株式会社 静電気放電保護素子
US7244975B2 (en) * 2005-07-05 2007-07-17 United Microelectronics Corp. High-voltage device structure
US7689946B2 (en) * 2006-10-19 2010-03-30 International Business Machines Corporation High-performance FET device layout

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