JP2008211199A5 - - Google Patents
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- Publication number
- JP2008211199A5 JP2008211199A5 JP2008018739A JP2008018739A JP2008211199A5 JP 2008211199 A5 JP2008211199 A5 JP 2008211199A5 JP 2008018739 A JP2008018739 A JP 2008018739A JP 2008018739 A JP2008018739 A JP 2008018739A JP 2008211199 A5 JP2008211199 A5 JP 2008211199A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- semiconductor device
- semiconductor layer
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 42
- 239000004065 semiconductor Substances 0.000 claims 31
- 229910052732 germanium Inorganic materials 0.000 claims 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 13
- 239000000463 material Substances 0.000 claims 13
- 229910052710 silicon Inorganic materials 0.000 claims 13
- 239000010703 silicon Substances 0.000 claims 13
- 239000010409 thin film Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 230000006870 function Effects 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 2
- 239000002985 plastic film Substances 0.000 claims 2
- 229920006255 plastic film Polymers 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008018739A JP5263757B2 (ja) | 2007-02-02 | 2008-01-30 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007024434 | 2007-02-02 | ||
| JP2007024434 | 2007-02-02 | ||
| JP2008018739A JP5263757B2 (ja) | 2007-02-02 | 2008-01-30 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008211199A JP2008211199A (ja) | 2008-09-11 |
| JP2008211199A5 true JP2008211199A5 (https=) | 2011-02-10 |
| JP5263757B2 JP5263757B2 (ja) | 2013-08-14 |
Family
ID=39761741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008018739A Expired - Fee Related JP5263757B2 (ja) | 2007-02-02 | 2008-01-30 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7994607B2 (https=) |
| JP (1) | JP5263757B2 (https=) |
| KR (1) | KR101443176B1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5525694B2 (ja) * | 2007-03-14 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
| US7872934B2 (en) * | 2007-12-14 | 2011-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for writing data into memory |
| JP5371400B2 (ja) * | 2007-12-14 | 2013-12-18 | 株式会社半導体エネルギー研究所 | メモリ及び半導体装置 |
| US8189376B2 (en) * | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
| WO2010032599A1 (en) * | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN102150268B (zh) * | 2008-09-30 | 2013-07-31 | 株式会社半导体能源研究所 | 半导体存储器件 |
| JP5387677B2 (ja) * | 2009-07-09 | 2014-01-15 | 株式会社村田製作所 | アンチヒューズ素子 |
| JP5641840B2 (ja) * | 2009-10-01 | 2014-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8519509B2 (en) * | 2010-04-16 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN103053026A (zh) * | 2011-08-10 | 2013-04-17 | 松下电器产业株式会社 | 薄膜晶体管器件以及薄膜晶体管器件的制造方法 |
| JP6578334B2 (ja) * | 2017-09-27 | 2019-09-18 | シャープ株式会社 | Ｔｆｔ基板およびｔｆｔ基板を備えた走査アンテナ |
| CN116745899A (zh) | 2021-01-06 | 2023-09-12 | 株式会社村田制作所 | 电子电路装置 |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5644198A (en) | 1979-09-14 | 1981-04-23 | Fujitsu Ltd | Semiconductor memory device |
| US4818082A (en) | 1988-05-27 | 1989-04-04 | Eastman Kodak Company | Compact wide-angle close-focus SLR zoom lens |
| US5206665A (en) * | 1989-08-10 | 1993-04-27 | Canon Kabushiki Kaisha | Recording medium, method for preparing the same, recording and reproducing device, and recording, reproducing and erasing method by use of such recording medium |
| US5989943A (en) | 1989-09-07 | 1999-11-23 | Quicklogic Corporation | Method for fabrication of programmable interconnect structure |
| JP2913768B2 (ja) | 1990-05-23 | 1999-06-28 | 日本電気株式会社 | 半導体装置 |
| JP2794348B2 (ja) * | 1991-06-21 | 1998-09-03 | キヤノン株式会社 | 記録媒体、その製造方法、情報処理装置 |
| JPH04373147A (ja) | 1991-06-21 | 1992-12-25 | Nippon Steel Corp | 半導体装置のヒューズ構造 |
| JPH0590411A (ja) * | 1991-09-27 | 1993-04-09 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JPH05198681A (ja) * | 1991-10-23 | 1993-08-06 | Fujitsu Ltd | アンチヒューズを備えた半導体装置 |
| JPH05343633A (ja) | 1992-06-10 | 1993-12-24 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| US5314840A (en) | 1992-12-18 | 1994-05-24 | International Business Machines Corporation | Method for forming an antifuse element with electrical or optical programming |
| JPH06295991A (ja) * | 1993-04-08 | 1994-10-21 | Seiko Epson Corp | 半導体装置 |
| JP3170101B2 (ja) | 1993-04-15 | 2001-05-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP3501416B2 (ja) | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
| GB9416899D0 (en) | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | Manufacture of electronic devices comprising thin-film circuitry |
| JP3226726B2 (ja) | 1994-09-06 | 2001-11-05 | 株式会社東芝 | アンチフューズ素子及びその製造方法 |
| JPH08139197A (ja) * | 1994-11-11 | 1996-05-31 | Tadahiro Omi | シリサイド反応を利用した半導体装置 |
| WO1997030445A1 (en) | 1996-02-16 | 1997-08-21 | Philips Electronics N.V. | Write-once read-many electrical memory element of a conjugated polymer or oligomer |
| US6034882A (en) | 1998-11-16 | 2000-03-07 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| US6288437B1 (en) | 1999-02-26 | 2001-09-11 | Micron Technology, Inc. | Antifuse structures methods and applications |
| DE10045192A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
| AU2001265068A1 (en) * | 2000-10-31 | 2002-05-15 | The Regents Of The University Of California | Organic bistable device and organic memory cells |
| US6498056B1 (en) | 2000-10-31 | 2002-12-24 | International Business Machines Corporation | Apparatus and method for antifuse with electrostatic assist |
| US7087975B2 (en) * | 2000-12-28 | 2006-08-08 | Infineon Technologies Ag | Area efficient stacking of antifuses in semiconductor device |
| US6465282B1 (en) | 2001-09-28 | 2002-10-15 | Infineon Technologies Ag | Method of forming a self-aligned antifuse link |
| US6717222B2 (en) * | 2001-10-07 | 2004-04-06 | Guobiao Zhang | Three-dimensional memory |
| US7196422B2 (en) | 2001-12-14 | 2007-03-27 | Intel Corporation | Low-dielectric constant structure with a multilayer stack of thin films with pores |
| JP2003243631A (ja) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置ならびにそれを用いた無線チップ、流通管理システムおよび製造工程管理システム |
| US6943065B2 (en) | 2002-03-25 | 2005-09-13 | Micron Technology Inc. | Scalable high performance antifuse structure and process |
| JP3940014B2 (ja) * | 2002-03-29 | 2007-07-04 | 富士通株式会社 | 半導体集積回路、無線タグ、および非接触型ｉｃカード |
| US6828685B2 (en) * | 2002-06-14 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Memory device having a semiconducting polymer film |
| JP2004128471A (ja) | 2002-08-07 | 2004-04-22 | Canon Inc | 不揮発メモリ装置 |
| US7442997B2 (en) * | 2002-08-28 | 2008-10-28 | Guobiao Zhang | Three-dimensional memory cells |
| JP4373085B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
| US7973313B2 (en) * | 2003-02-24 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
| US6750530B1 (en) | 2003-06-03 | 2004-06-15 | International Business Machines Corporation | Semiconductor antifuse with heating element |
| US20050006640A1 (en) * | 2003-06-26 | 2005-01-13 | Jackson Warren B. | Polymer-based memory element |
| US7699232B2 (en) * | 2004-02-06 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4836466B2 (ja) | 2004-02-06 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7994617B2 (en) * | 2004-02-06 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4989854B2 (ja) * | 2004-02-06 | 2012-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2005096380A1 (en) | 2004-04-02 | 2005-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method of the same |
| JP4026618B2 (ja) * | 2004-05-20 | 2007-12-26 | セイコーエプソン株式会社 | 電気光学装置、その検査方法および電子機器 |
| JP4671765B2 (ja) | 2004-06-03 | 2011-04-20 | 株式会社半導体エネルギー研究所 | 記憶装置及びその作製方法 |
| WO2005119779A1 (en) | 2004-06-03 | 2005-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method of the same |
| WO2006028231A1 (en) | 2004-09-10 | 2006-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4836523B2 (ja) | 2004-09-10 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置、ｉｃカード、ｉｃタグ、ｒｆｉｄ、トランスポンダ、紙幣、有価証券類、パスポート、電子機器、バッグ及び衣類 |
| US7795617B2 (en) * | 2004-10-29 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes |
| US7768014B2 (en) * | 2005-01-31 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method thereof |
| US7358590B2 (en) * | 2005-03-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US7791066B2 (en) * | 2005-05-20 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof and method for writing memory element |
| US7687327B2 (en) | 2005-07-08 | 2010-03-30 | Kovio, Inc, | Methods for manufacturing RFID tags and structures formed therefrom |
-
2008
- 2008-01-30 JP JP2008018739A patent/JP5263757B2/ja not_active Expired - Fee Related
- 2008-01-30 US US12/010,795 patent/US7994607B2/en not_active Expired - Fee Related
- 2008-02-01 KR KR1020080010485A patent/KR101443176B1/ko not_active Expired - Fee Related
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