KR101443176B1 - 반도체 장치 및 그것의 제작 방법 - Google Patents

반도체 장치 및 그것의 제작 방법 Download PDF

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Publication number
KR101443176B1
KR101443176B1 KR1020080010485A KR20080010485A KR101443176B1 KR 101443176 B1 KR101443176 B1 KR 101443176B1 KR 1020080010485 A KR1020080010485 A KR 1020080010485A KR 20080010485 A KR20080010485 A KR 20080010485A KR 101443176 B1 KR101443176 B1 KR 101443176B1
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South Korea
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film
electrode
silicon
germanium
semiconductor layer
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Korean (ko)
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KR20080072567A (ko
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하지메 토쿠나가
료타 타지마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020080010485A 2007-02-02 2008-02-01 반도체 장치 및 그것의 제작 방법 Expired - Fee Related KR101443176B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007024434 2007-02-02
JPJP-P-2007-00024434 2007-02-02

Publications (2)

Publication Number Publication Date
KR20080072567A KR20080072567A (ko) 2008-08-06
KR101443176B1 true KR101443176B1 (ko) 2014-09-19

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KR1020080010485A Expired - Fee Related KR101443176B1 (ko) 2007-02-02 2008-02-01 반도체 장치 및 그것의 제작 방법

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Country Link
US (1) US7994607B2 (https=)
JP (1) JP5263757B2 (https=)
KR (1) KR101443176B1 (https=)

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JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
WO2010032599A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102150268B (zh) * 2008-09-30 2013-07-31 株式会社半导体能源研究所 半导体存储器件
JP5387677B2 (ja) * 2009-07-09 2014-01-15 株式会社村田製作所 アンチヒューズ素子
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8519509B2 (en) * 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103053026A (zh) * 2011-08-10 2013-04-17 松下电器产业株式会社 薄膜晶体管器件以及薄膜晶体管器件的制造方法
JP6578334B2 (ja) * 2017-09-27 2019-09-18 シャープ株式会社 Ｔｆｔ基板およびｔｆｔ基板を備えた走査アンテナ
CN116745899A (zh) 2021-01-06 2023-09-12 株式会社村田制作所 电子电路装置

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JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
US20030067043A1 (en) * 2001-10-07 2003-04-10 Guobiao Zhang Three-dimensional memory
JP2005252243A (ja) 2004-02-06 2005-09-15 Semiconductor Energy Lab Co Ltd 半導体装置

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JPH05198681A (ja) * 1991-10-23 1993-08-06 Fujitsu Ltd アンチヒューズを備えた半導体装置
JPH08139197A (ja) * 1994-11-11 1996-05-31 Tadahiro Omi シリサイド反応を利用した半導体装置
US20030067043A1 (en) * 2001-10-07 2003-04-10 Guobiao Zhang Three-dimensional memory
JP2005252243A (ja) 2004-02-06 2005-09-15 Semiconductor Energy Lab Co Ltd 半導体装置

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JP2008211199A (ja) 2008-09-11
US20080224140A1 (en) 2008-09-18
US7994607B2 (en) 2011-08-09
KR20080072567A (ko) 2008-08-06
JP5263757B2 (ja) 2013-08-14

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