JP5263757B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5263757B2
JP5263757B2 JP2008018739A JP2008018739A JP5263757B2 JP 5263757 B2 JP5263757 B2 JP 5263757B2 JP 2008018739 A JP2008018739 A JP 2008018739A JP 2008018739 A JP2008018739 A JP 2008018739A JP 5263757 B2 JP5263757 B2 JP 5263757B2
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Japan
Prior art keywords
film
electrode
layer
silicon
antenna
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Expired - Fee Related
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JP2008018739A
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English (en)
Japanese (ja)
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JP2008211199A (ja
JP2008211199A5 (https=
Inventor
肇 徳永
亮太 田島
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008018739A priority Critical patent/JP5263757B2/ja
Publication of JP2008211199A publication Critical patent/JP2008211199A/ja
Publication of JP2008211199A5 publication Critical patent/JP2008211199A5/ja
Application granted granted Critical
Publication of JP5263757B2 publication Critical patent/JP5263757B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2008018739A 2007-02-02 2008-01-30 半導体装置の作製方法 Expired - Fee Related JP5263757B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008018739A JP5263757B2 (ja) 2007-02-02 2008-01-30 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007024434 2007-02-02
JP2007024434 2007-02-02
JP2008018739A JP5263757B2 (ja) 2007-02-02 2008-01-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008211199A JP2008211199A (ja) 2008-09-11
JP2008211199A5 JP2008211199A5 (https=) 2011-02-10
JP5263757B2 true JP5263757B2 (ja) 2013-08-14

Family

ID=39761741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008018739A Expired - Fee Related JP5263757B2 (ja) 2007-02-02 2008-01-30 半導体装置の作製方法

Country Status (3)

Country Link
US (1) US7994607B2 (https=)
JP (1) JP5263757B2 (https=)
KR (1) KR101443176B1 (https=)

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US7872934B2 (en) * 2007-12-14 2011-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for writing data into memory
JP5371400B2 (ja) * 2007-12-14 2013-12-18 株式会社半導体エネルギー研究所 メモリ及び半導体装置
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
WO2010032599A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102150268B (zh) * 2008-09-30 2013-07-31 株式会社半导体能源研究所 半导体存储器件
JP5387677B2 (ja) * 2009-07-09 2014-01-15 株式会社村田製作所 アンチヒューズ素子
JP5641840B2 (ja) * 2009-10-01 2014-12-17 株式会社半導体エネルギー研究所 半導体装置
US8519509B2 (en) * 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103053026A (zh) * 2011-08-10 2013-04-17 松下电器产业株式会社 薄膜晶体管器件以及薄膜晶体管器件的制造方法
JP6578334B2 (ja) * 2017-09-27 2019-09-18 シャープ株式会社 Ｔｆｔ基板およびｔｆｔ基板を備えた走査アンテナ
CN116745899A (zh) 2021-01-06 2023-09-12 株式会社村田制作所 电子电路装置

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Also Published As

Publication number Publication date
JP2008211199A (ja) 2008-09-11
US20080224140A1 (en) 2008-09-18
US7994607B2 (en) 2011-08-09
KR20080072567A (ko) 2008-08-06
KR101443176B1 (ko) 2014-09-19

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