JP2008112988A5 - - Google Patents
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- Publication number
- JP2008112988A5 JP2008112988A5 JP2007260681A JP2007260681A JP2008112988A5 JP 2008112988 A5 JP2008112988 A5 JP 2008112988A5 JP 2007260681 A JP2007260681 A JP 2007260681A JP 2007260681 A JP2007260681 A JP 2007260681A JP 2008112988 A5 JP2008112988 A5 JP 2008112988A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor device
- insulating film
- thin film
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 35
- 239000010408 film Substances 0.000 claims 28
- 239000010409 thin film Substances 0.000 claims 15
- 239000010410 layer Substances 0.000 claims 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 11
- 239000010703 silicon Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000000463 material Substances 0.000 claims 8
- 239000011229 interlayer Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 229910021332 silicide Inorganic materials 0.000 claims 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 239000002985 plastic film Substances 0.000 claims 2
- 229920006255 plastic film Polymers 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007260681A JP5296360B2 (ja) | 2006-10-04 | 2007-10-04 | 半導体装置およびその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006273394 | 2006-10-04 | ||
| JP2006273394 | 2006-10-04 | ||
| JP2007260681A JP5296360B2 (ja) | 2006-10-04 | 2007-10-04 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008112988A JP2008112988A (ja) | 2008-05-15 |
| JP2008112988A5 true JP2008112988A5 (https=) | 2010-11-11 |
| JP5296360B2 JP5296360B2 (ja) | 2013-09-25 |
Family
ID=39445318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007260681A Expired - Fee Related JP5296360B2 (ja) | 2006-10-04 | 2007-10-04 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5296360B2 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5415713B2 (ja) * | 2008-05-23 | 2014-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8044499B2 (en) | 2008-06-10 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method thereof |
| JP5473413B2 (ja) | 2008-06-20 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法 |
| JP2010041045A (ja) | 2008-07-09 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| WO2010032599A1 (en) | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5583951B2 (ja) | 2008-11-11 | 2014-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5470054B2 (ja) | 2009-01-22 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7559563B2 (ja) * | 2020-01-28 | 2024-10-02 | 東レ株式会社 | 無線通信デバイス、およびその製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3559580B2 (ja) * | 1993-12-17 | 2004-09-02 | 財団法人国際科学振興財団 | 半導体装置 |
| JP3501416B2 (ja) * | 1994-04-28 | 2004-03-02 | 忠弘 大見 | 半導体装置 |
| JPH08316324A (ja) * | 1995-05-16 | 1996-11-29 | Kawasaki Steel Corp | 半導体集積回路装置の製造方法 |
| JP4912641B2 (ja) * | 2004-08-23 | 2012-04-11 | 株式会社半導体エネルギー研究所 | 無線チップの作製方法 |
-
2007
- 2007-10-04 JP JP2007260681A patent/JP5296360B2/ja not_active Expired - Fee Related
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