JP2008112988A5

JP2008112988A5 -

Info

Publication number: JP2008112988A5
Application number: JP2007260681A
Authority: JP
Filing date: 2007-10-04
Publication date: 2010-11-11
Anticipated expiration: 2027-10-04

Claims

A driver circuit including a plurality of thin film transistors over a substrate having an insulating surface, and a plurality of memory elements;
The memory element includes: a first electrode that forms silicide by reacting with silicon; a silicon film on the first electrode; and a second electrode that forms silicide by reacting with silicon on the silicon film. Have
The gate electrode of the thin film transistor is the same material as the first electrode of the memory device, the source electrode or the drain electrode of the thin film transistor, and characterized in that the same material as the second electrode of the memory device semiconductor device.

A driver circuit including a plurality of thin film transistors over a substrate having an insulating surface, a plurality of memory elements, and an antenna;
The memory element includes: a first electrode that forms silicide by reacting with silicon; a silicon film on the first electrode; and a second electrode that forms silicide by reacting with silicon on the silicon film. Have
The gate electrode of the thin film transistor is the same material as the first electrode of the memory element,
Having a connection electrode below the antenna, the antenna is electrically connected to the connection electrode;
The connection electrode is electrically connected to the thin film transistor;
The connection electrode is the same material as a source electrode and a drain electrode of the thin film transistor, and a semiconductor device which is a same material as the second electrode of the memory element.

3. The semiconductor device according to claim 1, wherein the silicon film contains oxygen or nitrogen.

A semiconductor device including a memory element;
A thin film transistor over a substrate having an insulating surface;
The thin film transistor is an island-shaped semiconductor formed on the substrate, an insulating film formed on the substrate, a part of the insulating film is a gate insulator formed on the semiconductor,
A gate electrode formed on the semiconductor via the gate insulator;
A first electrode on the substrate, an interlayer insulating film covering at least the thin film transistor and the first electrode formed on the substrate, and the interlayer insulating film are formed on a source region or a drain region of the thin film transistor. 1 opening and a second opening on the first electrode,
Said second semiconductor layer formed in the opening on the first electrode, is connected via the first opening on the interlayer insulating film and the source region or the drain region electrically to the thin film transistor The second electrode, the third electrode formed on the interlayer insulating film, and the third electrode are arranged such that the semiconductor layer is sandwiched between the first electrode and the third electrode. Formed in the second opening;
The memory element includes the first electrode, the third electrode, and the semiconductor layer sandwiched between the first electrode and the second electrode, and the third electrode and the third electrode The two electrodes are made of the same material,
The first electrode, wherein a is the same material as the gate electrode.

5. The semiconductor device according to claim 4, wherein the semiconductor layer is a silicon film, and the silicon film contains oxygen or nitrogen.

6. The semiconductor device according to claim 4 , further comprising a fourth electrode and an antenna electrically connected to the fourth electrode on the interlayer insulating film.

In any one of claims 4 to 6, wherein a has a drive kinematic circuit.

In any one of claims 1 to 7, wherein the first electrode, titanium, tungsten, nickel, chromium, molybdenum, tantalum, cobalt, zirconium, vanadium, palladium, hafnium, platinum, an element selected from iron A semiconductor device including the semiconductor device.

In any one of claims 1 to 8, the second electrode, titanium, tungsten, nickel, chromium, molybdenum, tantalum, cobalt, zirconium, vanadium, palladium, hafnium, platinum, an element selected from iron a semiconductor device comprising.

In any one of claims 1 to 9, prior Kimoto plate, wherein a glass substrate, a plastic film, which is one one of the paper.

In any one of claims 1 to 10, wherein the second electrode and the first electrode is a semiconductor device which is different materials.

A method for manufacturing a semiconductor device having a driving circuit including a plurality of thin film transistors over a same substrate and a plurality of memory elements,
Forming a first semiconductor layer over a substrate having an insulating surface;
Forming a first insulating film on the first semiconductor layer;
Forming a first electrode overlying the first semiconductor layer on the first insulating film, and a second electrode over the first insulating film;
Forming a second insulating film covering the first electrode and the second electrode;
Etching the second insulating film to form a first opening reaching the second electrode;
Forming a second semiconductor layer covering the first opening;
Etching the second insulating film to form a second opening reaching the first semiconductor layer;
Forming a third electrode overlapping the first opening and a fourth electrode overlapping the second opening on the second insulating film;
The memory element includes the second electrode, the second semiconductor layer, and the third electrode.
The thin film transistor, wherein the first semiconductor layer, wherein a first electrode, a method for manufacturing a semiconductor device, characterized by chromatic and said fourth electrode.

The method for manufacturing a semiconductor device according to claim 12, wherein after the first opening is formed, the second semiconductor layer is formed by exposure to air.

14. The fifth electrode according to claim 12 , wherein a fifth electrode is formed on the first insulating film in the same step as the formation of the first electrode and the second electrode, and the fifth electrode is further formed on the fifth electrode. A method for manufacturing a semiconductor device, wherein an antenna electrically connected to a fifth electrode is formed.

15. The method according to claim 12 , wherein the first electrode is a gate electrode of the thin film transistor, the first insulating film is a gate insulating film, and the fourth electrode is a source electrode or a drain. A method for manufacturing a semiconductor device, which is an electrode.

16. The method for manufacturing a semiconductor device according to claim 12 , wherein the first semiconductor layer is a polycrystalline silicon film.

16. The method for manufacturing a semiconductor device according to claim 12 , wherein the second semiconductor layer is an amorphous silicon film, a microcrystalline silicon film, or a polycrystalline silicon film.

In any one of claims 12 to 15, the front Kimoto plate, a method for manufacturing a semiconductor device, wherein the glass substrate, a plastic film, which is one one of the paper.