CN104409346A - 低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置 - Google Patents

低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置 Download PDF

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CN104409346A
CN104409346A CN201410553299.3A CN201410553299A CN104409346A CN 104409346 A CN104409346 A CN 104409346A CN 201410553299 A CN201410553299 A CN 201410553299A CN 104409346 A CN104409346 A CN 104409346A
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layer
film transistor
active layer
low
temperature polysilicon
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陆小勇
刘政
孙亮
李小龙
龙春平
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201410553299.3A priority Critical patent/CN104409346A/zh
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Priority to PCT/CN2015/074489 priority patent/WO2016058324A1/zh
Priority to US14/768,349 priority patent/US9768308B2/en
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Abstract

本发明提供了一种低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置，该低温多晶硅薄膜晶体管的制作方法包括：S1:在衬底基板上依次形成有源层、栅极绝缘层、栅极以及层间绝缘层；S2:形成第一金属薄膜层；S3:对所述有源层和栅极绝缘层进行氢化处理；S4:形成第二金属薄膜层，所述第二金属薄膜层用于形成源漏极的图形。本发明通过在对有源层和栅极绝缘层进行氢化处理之前在层间绝缘层上方形成第一金属薄膜层，在氢化工艺之后，再制作用于形成源漏极的第二金属薄膜层，不但能够避免氢化工艺对源漏极电阻的不良影响，且不会改变形成的薄膜晶体管的特性，从而减小氢化工艺对形成的薄膜晶体管的不良影响。

Description

低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置
技术领域
本发明涉及显示领域，尤其涉及一种低温多晶硅薄膜晶体管及制作方法、阵列基板、显示装置。
背景技术
低温多晶硅薄膜晶体管(Low Temperature Poly-silicon ThinFilmTransistor，简称LTPS TFT)由于具有较高的迁移率和稳定性等优点，已普遍应用于显示器制造领域。
低温多晶硅薄膜晶体管的制备过程一般是在衬底基板1’上形成缓冲层2’和多晶硅薄膜，并对多晶硅薄膜图案化形成薄膜晶体管的有源层3’；在有源层3’上形成栅绝缘层4’；在栅绝缘层4’上形成栅极5’；再在有源层3’内注入离子分别形成源漏极区域(源极区域和漏极区域)；沉积覆盖栅极5’以及栅绝缘层4’的层间绝缘层(ILD)6’；形成直达源极区域和漏极区域的接触孔；再形成金属层7’并图案化形成源极和漏极，源极和漏极通过接触孔分别连接源极区域和漏极区域。在上述TFT的制备过程中，多晶硅薄膜与栅绝缘层之间的界面会产生具有未成键轨道的悬挂键，这是多晶硅晶界的界面态密度增加的很重要的因素，由于悬挂键的影响从而导致薄膜晶体管的载流子迁移率下降，阈值电压升高等显示器件的性能退化问题。
现有技术通常采用氢化工艺向悬挂键供氢从而钝化多晶硅薄膜与栅极绝缘层界面处的悬挂键，然而，由于源漏(S/D)工艺采用钛铝钛(TiAlTi)低电阻率薄膜，其采用的氢化工艺会导致Ti与Al发生反应生成高电阻率TiAl3合金，造成最终的共用接地端电压(VSS Rs)较大，对最后形成的TFT造成不良影响。
发明内容
(一)要解决的技术问题
本发明要解决的技术问题是如何减小氢化工艺对形成的薄膜晶体管的不良影响。
(二)技术方案
为解决上述技术问题，本发明的技术方案提供了一种低温多晶硅薄膜晶体管的制作方法，包括：
S1:在衬底基板上依次形成有源层、栅极绝缘层、栅极以及层间绝缘层；
S2:形成第一金属薄膜层；
S3:对所述有源层和栅极绝缘层进行氢化处理；
S4:形成第二金属薄膜层，所述第二金属薄膜层用于形成源漏极的图形。
进一步地，在步骤S1中形成有源层包括：
在所述衬底基板上形成非晶硅薄膜；
对所述非晶硅薄膜进行晶化处理形成多晶硅薄膜；
对所述多晶硅薄膜图案化形成有源层。
进一步地，步骤S2之前还包括：在所述有源层的源漏区域上方形成过孔，以使在步骤S2中第一金属薄膜层与所述有源层在所述源漏区域相接触；
步骤S2之后还包括：进行第一热处理以使所述第一金属薄膜层与所述有源层在相接触的区域发生反应生成金属硅化物。
进一步地，步骤S3之后还包括：
去除所述第一金属薄膜层中所述相接触区域之外的金属薄膜材料。
进一步地，步骤S3之后还包括：对所述生成的金属硅化物进行第二热处理。
进一步地，所述氢化处理的温度为250～500摄氏度，时间为0.5～3小时。
进一步地，所述第一金属薄膜层的材料为钨、钛、钴、镍中的一种或多种。
为解决上述技术问题，本发明还提供了一种上述方法制作的低温多晶硅薄膜晶体管。
为解决上述技术问题，本发明还提供了一种阵列基板，包括上述的低温多晶硅薄膜晶体管。
为解决上述技术问题，本发明还提供了一种显示装置，包括上述的阵列基板。
(三)有益效果
本发明通过在对有源层和栅极绝缘层进行氢化处理之前在层间绝缘层上方形成第一金属薄膜层，在氢化工艺之后，再制作用于形成源漏极的第二金属薄膜层，不但能够避免氢化工艺对源漏极电阻的不良影响，且不会改变形成的薄膜晶体管的特性，从而减小氢化工艺对形成的薄膜晶体管的不良影响。
附图说明
图1是现有技术中对有源层和栅极绝缘层进行氢化处理的示意图；
图2是本发明实施方式提供的一种低温多晶硅薄膜晶体管的制作方法的流程图；
图3是本发明实施方式提供的另一种低温多晶硅薄膜晶体管的制作方法的流程图；
图4-9是本发明实施方式提供的制作低温多晶硅薄膜晶体管的示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
图2是本发明实施方式提供的一种低温多晶硅薄膜晶体管的制作方法的流程图，包括：
S1:在衬底基板上依次形成有源层、栅极绝缘层、栅极以及层间绝缘层；
S2:形成第一金属薄膜层；
S3:对所述有源层和栅极绝缘层进行氢化处理；
S4:形成第二金属薄膜层，所述第二金属薄膜层用于形成源漏极的图形。
其中，第一金属薄膜层的材料可与形成第二金属薄膜的材料相同，通过溅射的方式形成在层间绝缘层上，氢化处理的温度可以为250～500摄氏度，例如可以为350摄氏度、400摄氏度等，时间为0.5～3小时，例如可以为1小时、2小时等。对于步骤S2形成的第一金属薄膜层，可在步骤S3对有源层和栅极绝缘层进行氢化处理之后将该第一金属薄膜层去除，也可不将其去除，而在步骤S4形成第二金属薄膜层之后，将第一薄膜层与第二薄膜层作为一层结构进行刻蚀，从而形成源漏极的图形。
本发明实施方式提供的低温多晶硅薄膜晶体管的制作方法，通过在对有源层和栅极绝缘层进行氢化处理之前在层间绝缘层上方形成第一金属薄膜层，在氢化工艺之后，再制作用于形成源漏极的第二金属薄膜层，不但能够避免氢化工艺对源漏极电阻的不良影响，且不会改变形成的薄膜晶体管的特性，从而减小氢化工艺对形成的薄膜晶体管的不良影响。
图3是本发明实施方式提供的另一种低温多晶硅薄膜晶体管的制作方法的流程图，包括：
S21：在衬底基板上依次形成有源层、栅极绝缘层、栅极以及层间绝缘层；具体地，如图4所示，首先在衬底基板1上形成缓冲层2和有源层3，其中，有源层3的形成步骤为在衬底基板上形成非晶硅薄膜；对非晶硅薄膜进行晶化处理形成多晶硅薄膜；对多晶硅薄膜图案化形成有源层3，而后在有源层3上形成栅极绝缘层4；在栅极绝缘层4上形成栅极5；再在有源层3内注入离子分别形成源漏区域31(源极区域和漏极区域)；沉积覆盖栅极5以及栅绝缘层4的层间绝缘层6；
S22：在所述有源层的源漏区域上方形成过孔，参见图4，可对层间绝缘层6和栅极绝缘层4进行刻蚀，在有源层的源漏区域31上方形成过孔；
S23：形成第一金属薄膜层8，参见图5，通过步骤S22中的过孔可使第一金属薄膜8与所述有源层3在所述源漏区域31相接触，其中，该第一金属薄膜层8可以是一层或多层金属薄膜，其采用的材料可以为钨、钛、钴、镍中的一种或多种；
S24：进行第一热处理以使所述第一金属薄膜层与所述有源层在相接触的区域发生反应生成金属硅化物，参见图6，具体，可采用RTP(快速热处理)工艺对上述的结构进行热处理，使第一金属薄膜层8与所述有源层3在相接触的区域发生反应生成金属硅化物81，从而在有源层3上方形成自对准硅化物；
S25：对所述有源层3和栅极绝缘层4进行氢化处理；具体地，参见图7，氢化处理的温度可以为250～500摄氏度，例如可以为350摄氏度、400摄氏度等，时间为0.5～3小时，例如可以为1小时、2小时等，通过步骤S23和步骤S24得到的结构对层间绝缘层形成阻挡层，而后再进行氢化工艺，能够有效的将氢原子从供氢薄膜传输到多晶层，从而钝化多晶硅薄膜与栅绝缘层界面处的悬挂键，此外，步骤S25与步骤S24也可互换，即先进行氢化处理，再进行第一热处理；
S26：去除所述第一金属薄膜层中所述相接触区域之外的金属薄膜材料；参见图8，可通过刻蚀工艺将第一金属薄膜层中未发生反应的金属薄膜层去除，而只保留第一金属薄膜层与有源层相接触区域生成的金属硅化物，用作有源层与后续形成的源漏极之间的欧姆接触层，具体地，由于生成的金属硅化物不溶于刻蚀液，因此，在上述刻蚀工艺中，不需要掩膜工艺，通过刻蚀液直接对第一金属薄膜层进行刻蚀，即可去除掉第一金属薄膜层中未发生反应的金属薄膜，而只保留源漏区域上方的金属硅化物。
S27：对所述生成的金属硅化物进行第二热处理；由于步骤S24中生成的金属硅化物的电阻率较高，因此，在氢化工艺之后可采用RTP(快速热处理)工艺对生成的金属硅化物进行第二热处理，从而降低生成的金属硅化物的电阻率，有助于源漏极与有源层之间形成良好的欧姆接触；
S28：形成第二金属薄膜层7，所述第二金属薄膜层7用于形成源漏极的图形，具体地，参见图9，可采用钛铝钛(TiAlTi)或者铝钛(AlTi)等低电阻率薄膜，通过溅射工艺形成在上述的结构上，而后通过刻蚀工艺对第二金属薄膜层7刻蚀形成源漏极。
本发明实施方式提供的低温多晶硅薄膜晶体管的制作方法，通过在层间绝缘层上方形成第一金属薄膜层，并通过过孔使第一金属薄膜与有源层在源漏区域相接触，对该第一金属薄膜进行热处理以在接触的区域形成自对准硅化物，而后进行氢化工艺，再形成源漏极的图形，不但能够避免氢化工艺对源漏极电阻的不良影响，获得较好的TFT特性，且形成的自对准硅化物有助于源漏极与有源层形成良好的欧姆接触，此外，该制作方法不影响源漏极掺杂工艺，能够提高工艺稳定性与可靠性。
此外，本发明实施方式还提供了一种上述方法制作的低温多晶硅薄膜晶体管。
另一方面，本发明实施方式还提供了一种阵列基板，包括上述方法制作的低温多晶硅薄膜晶体管。
本发明实施方式还提供了一种显示装置，包括上述的阵列基板。本发明实施方式提供的显示装置可以是笔记本电脑显示屏、液晶显示器、液晶电视、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
以上实施方式仅用于说明本发明，而并非对本发明的限制，有关技术领域的普通技术人员，在不脱离本发明的精神和范围的情况下，还可以做出各种变化和变型，因此所有等同的技术方案也属于本发明的范畴，本发明的专利保护范围应由权利要求限定。

Claims (10)

1.一种低温多晶硅薄膜晶体管的制作方法，其特征在于，包括：
S1:在衬底基板上依次形成有源层、栅极绝缘层、栅极以及层间绝缘层；
S2:形成第一金属薄膜层；
S3:对所述有源层和栅极绝缘层进行氢化处理；
S4:形成第二金属薄膜层，所述第二金属薄膜层用于形成源漏极的图形。
2.根据权利要求1所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，在步骤S1中形成有源层包括：
在所述衬底基板上形成非晶硅薄膜；
对所述非晶硅薄膜进行晶化处理形成多晶硅薄膜；
对所述多晶硅薄膜图案化形成有源层。
3.根据权利要求2所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，步骤S2之前还包括：在所述有源层的源漏区域上方形成过孔，以使在步骤S2中第一金属薄膜层与所述有源层在所述源漏区域相接触；
步骤S2之后还包括：进行第一热处理以使所述第一金属薄膜层与所述有源层在相接触的区域发生反应生成金属硅化物。
4.根据权利要求3所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，步骤S3之后还包括：
去除所述第一金属薄膜层中所述相接触区域之外的金属薄膜材料。
5.根据权利要求3所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，步骤S3之后还包括：对所述生成的金属硅化物进行第二热处理。
6.根据权利要求1～5任一所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，所述氢化处理的温度为250～500摄氏度，时间为0.5～3小时。
7.根据权利要求1～5任一所述的低温多晶硅薄膜晶体管的制作方法，其特征在于，所述第一金属薄膜层的材料为钨、钛、钴、镍中的一种或多种。
8.一种如权利要求1～7中任一项所述方法制作的低温多晶硅薄膜晶体管。
9.一种阵列基板，其特征在于，包括如权利要求8所述的低温多晶硅薄膜晶体管。
10.一种显示装置，其特征在于，包括如权利要求9所述的阵列基板。
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