JP2008211090A - 半導体装置の製造方法及び半導体装置の製造装置 - Google Patents
半導体装置の製造方法及び半導体装置の製造装置 Download PDFInfo
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- JP2008211090A JP2008211090A JP2007048065A JP2007048065A JP2008211090A JP 2008211090 A JP2008211090 A JP 2008211090A JP 2007048065 A JP2007048065 A JP 2007048065A JP 2007048065 A JP2007048065 A JP 2007048065A JP 2008211090 A JP2008211090 A JP 2008211090A
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- Prior art keywords
- film
- metal cap
- cap layer
- gas
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 105
- 229910052751 metal Inorganic materials 0.000 claims abstract description 148
- 239000002184 metal Substances 0.000 claims abstract description 148
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000006243 chemical reaction Methods 0.000 claims abstract description 81
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 78
- 230000008569 process Effects 0.000 claims description 63
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 35
- 238000001179 sorption measurement Methods 0.000 claims description 16
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 198
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 64
- 229910052710 silicon Inorganic materials 0.000 abstract description 64
- 239000010703 silicon Substances 0.000 abstract description 64
- 239000011229 interlayer Substances 0.000 abstract description 56
- 229910052717 sulfur Inorganic materials 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 113
- 230000000052 comparative effect Effects 0.000 description 39
- 239000010949 copper Substances 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 32
- 230000004888 barrier function Effects 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- 239000002245 particle Substances 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 230000032258 transport Effects 0.000 description 9
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 238000002407 reforming Methods 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010574 gas phase reaction Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000921 elemental analysis Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910007744 Zr—N Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 zirconium nitride compound Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006057 reforming reaction Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007048065A JP2008211090A (ja) | 2007-02-27 | 2007-02-27 | 半導体装置の製造方法及び半導体装置の製造装置 |
| KR1020117019031A KR20110099064A (ko) | 2007-02-27 | 2008-02-25 | 반도체 소자의 제조 방법 및 반도체 소자의 제조 장치 |
| KR1020097020079A KR101181389B1 (ko) | 2007-02-27 | 2008-02-25 | 반도체 소자의 제조 방법 및 반도체 소자의 제조 장치 |
| CN2011102702679A CN102290372A (zh) | 2007-02-27 | 2008-02-25 | 半导体器件制造方法以及半导体器件制造设备 |
| PCT/JP2008/053163 WO2008105360A1 (ja) | 2007-02-27 | 2008-02-25 | 半導体装置の製造方法及び半導体装置の製造装置 |
| US12/528,811 US8043963B2 (en) | 2007-02-27 | 2008-02-25 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| CN2008800062867A CN101627459B (zh) | 2007-02-27 | 2008-02-25 | 半导体器件制造方法以及半导体器件制造设备 |
| TW097106539A TWI392025B (zh) | 2007-02-27 | 2008-02-26 | 半導體裝置之製造方法及半導體裝置之製造裝置 |
| US13/273,612 US8367542B2 (en) | 2007-02-27 | 2011-10-14 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007048065A JP2008211090A (ja) | 2007-02-27 | 2007-02-27 | 半導体装置の製造方法及び半導体装置の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008211090A true JP2008211090A (ja) | 2008-09-11 |
| JP2008211090A5 JP2008211090A5 (enExample) | 2010-04-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007048065A Pending JP2008211090A (ja) | 2007-02-27 | 2007-02-27 | 半導体装置の製造方法及び半導体装置の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008211090A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013110142A (ja) * | 2011-11-17 | 2013-06-06 | Ulvac Japan Ltd | 絶縁膜形成方法及び絶縁膜形成装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239536A (en) * | 1977-09-09 | 1980-12-16 | Sumitomo Electric Industries, Ltd. | Surface-coated sintered hard body |
| JP2003017496A (ja) * | 2001-04-27 | 2003-01-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| WO2004055235A1 (de) * | 2002-12-13 | 2004-07-01 | Walter Ag | CVD-BESCHICHTUNGSVERFAHREN FÜR ZRBxCyNz-SCHICHTEN (x+y+z=1) SOWIE BESCHICHTETES SCHNEIDWERKZEUG |
| JP2004259753A (ja) * | 2003-02-24 | 2004-09-16 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JP2006009144A (ja) * | 2004-05-21 | 2006-01-12 | Ulvac Japan Ltd | 真空成膜装置 |
| JP2006057162A (ja) * | 2004-08-23 | 2006-03-02 | Ulvac Japan Ltd | バリア膜の形成方法 |
| WO2008056742A1 (fr) * | 2006-11-09 | 2008-05-15 | Ulvac, Inc. | Procédé de fabrication de film barrière |
-
2007
- 2007-02-27 JP JP2007048065A patent/JP2008211090A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239536A (en) * | 1977-09-09 | 1980-12-16 | Sumitomo Electric Industries, Ltd. | Surface-coated sintered hard body |
| JP2003017496A (ja) * | 2001-04-27 | 2003-01-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| WO2004055235A1 (de) * | 2002-12-13 | 2004-07-01 | Walter Ag | CVD-BESCHICHTUNGSVERFAHREN FÜR ZRBxCyNz-SCHICHTEN (x+y+z=1) SOWIE BESCHICHTETES SCHNEIDWERKZEUG |
| JP2004259753A (ja) * | 2003-02-24 | 2004-09-16 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JP2006009144A (ja) * | 2004-05-21 | 2006-01-12 | Ulvac Japan Ltd | 真空成膜装置 |
| JP2006057162A (ja) * | 2004-08-23 | 2006-03-02 | Ulvac Japan Ltd | バリア膜の形成方法 |
| WO2008056742A1 (fr) * | 2006-11-09 | 2008-05-15 | Ulvac, Inc. | Procédé de fabrication de film barrière |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013110142A (ja) * | 2011-11-17 | 2013-06-06 | Ulvac Japan Ltd | 絶縁膜形成方法及び絶縁膜形成装置 |
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