JP2008177419A5 - - Google Patents

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Publication number
JP2008177419A5
JP2008177419A5 JP2007010476A JP2007010476A JP2008177419A5 JP 2008177419 A5 JP2008177419 A5 JP 2008177419A5 JP 2007010476 A JP2007010476 A JP 2007010476A JP 2007010476 A JP2007010476 A JP 2007010476A JP 2008177419 A5 JP2008177419 A5 JP 2008177419A5
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JP
Japan
Prior art keywords
supply unit
gas supply
deposition chamber
antenna
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007010476A
Other languages
English (en)
Japanese (ja)
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JP2008177419A (ja
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Publication date
Application filed filed Critical
Priority to JP2007010476A priority Critical patent/JP2008177419A/ja
Priority claimed from JP2007010476A external-priority patent/JP2008177419A/ja
Priority to CN2007800501126A priority patent/CN101632153B/zh
Priority to PCT/JP2007/070995 priority patent/WO2008087775A1/ja
Priority to US12/523,709 priority patent/US20100062585A1/en
Priority to KR1020097014968A priority patent/KR20090091819A/ko
Publication of JP2008177419A publication Critical patent/JP2008177419A/ja
Publication of JP2008177419A5 publication Critical patent/JP2008177419A5/ja
Pending legal-status Critical Current

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JP2007010476A 2007-01-19 2007-01-19 シリコン薄膜形成方法 Pending JP2008177419A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007010476A JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法
CN2007800501126A CN101632153B (zh) 2007-01-19 2007-10-29 硅薄膜形成方法
PCT/JP2007/070995 WO2008087775A1 (ja) 2007-01-19 2007-10-29 シリコン薄膜形成方法
US12/523,709 US20100062585A1 (en) 2007-01-19 2007-10-29 Method for forming silicon thin film
KR1020097014968A KR20090091819A (ko) 2007-01-19 2007-10-29 실리콘 박막 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007010476A JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法

Publications (2)

Publication Number Publication Date
JP2008177419A JP2008177419A (ja) 2008-07-31
JP2008177419A5 true JP2008177419A5 (enExample) 2009-07-16

Family

ID=39635781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007010476A Pending JP2008177419A (ja) 2007-01-19 2007-01-19 シリコン薄膜形成方法

Country Status (5)

Country Link
US (1) US20100062585A1 (enExample)
JP (1) JP2008177419A (enExample)
KR (1) KR20090091819A (enExample)
CN (1) CN101632153B (enExample)
WO (1) WO2008087775A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
WO2011080957A1 (ja) 2009-12-29 2011-07-07 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示装置
WO2012029661A1 (ja) * 2010-09-01 2012-03-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
KR102293862B1 (ko) 2014-09-15 2021-08-25 삼성전자주식회사 반도체 소자의 제조 방법
JP7200880B2 (ja) * 2019-08-19 2023-01-10 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1335419A3 (en) * 1994-06-15 2003-08-27 Seiko Epson Corporation Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
JPH0851214A (ja) * 1994-08-05 1996-02-20 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US5952061A (en) * 1996-12-27 1999-09-14 Stanley Electric Co., Ltd. Fabrication and method of producing silicon films
RU2189663C2 (ru) * 1997-06-30 2002-09-20 Мацушита Электрик Индастриал Ко., Лтд. Способ и устройство для изготовления тонкой полупроводниковой пленки
US20020060322A1 (en) * 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
JP2002164290A (ja) * 2000-11-28 2002-06-07 Tokuyama Corp 多結晶シリコン膜の製造方法
JP4254861B2 (ja) * 2004-03-26 2009-04-15 日新電機株式会社 シリコン膜形成装置
JP4299717B2 (ja) * 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
JP4434115B2 (ja) * 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法

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