JP2011066033A5 - - Google Patents

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Publication number
JP2011066033A5
JP2011066033A5 JP2009212727A JP2009212727A JP2011066033A5 JP 2011066033 A5 JP2011066033 A5 JP 2011066033A5 JP 2009212727 A JP2009212727 A JP 2009212727A JP 2009212727 A JP2009212727 A JP 2009212727A JP 2011066033 A5 JP2011066033 A5 JP 2011066033A5
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JP
Japan
Prior art keywords
chamber
plasma
upper chamber
plasma generation
lower chamber
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Application number
JP2009212727A
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English (en)
Japanese (ja)
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JP2011066033A (ja
JP4855506B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2009212727A external-priority patent/JP4855506B2/ja
Priority to JP2009212727A priority Critical patent/JP4855506B2/ja
Priority to EP10816963.2A priority patent/EP2479781B1/en
Priority to PCT/JP2010/062035 priority patent/WO2011033850A1/ja
Priority to US13/203,191 priority patent/US20110303365A1/en
Priority to CN201080007916.XA priority patent/CN102318043B/zh
Priority to KR1020117018564A priority patent/KR101224143B1/ko
Priority to TW099130341A priority patent/TW201110229A/zh
Publication of JP2011066033A publication Critical patent/JP2011066033A/ja
Publication of JP2011066033A5 publication Critical patent/JP2011066033A5/ja
Publication of JP4855506B2 publication Critical patent/JP4855506B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009212727A 2009-09-15 2009-09-15 プラズマエッチング装置 Active JP4855506B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009212727A JP4855506B2 (ja) 2009-09-15 2009-09-15 プラズマエッチング装置
CN201080007916.XA CN102318043B (zh) 2009-09-15 2010-07-16 电浆蚀刻装置
PCT/JP2010/062035 WO2011033850A1 (ja) 2009-09-15 2010-07-16 プラズマエッチング装置
US13/203,191 US20110303365A1 (en) 2009-09-15 2010-07-16 Plasma Etching Apparatus
EP10816963.2A EP2479781B1 (en) 2009-09-15 2010-07-16 Plasma etching method
KR1020117018564A KR101224143B1 (ko) 2009-09-15 2010-07-16 플라즈마 식각 장치
TW099130341A TW201110229A (en) 2009-09-15 2010-09-08 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009212727A JP4855506B2 (ja) 2009-09-15 2009-09-15 プラズマエッチング装置

Publications (3)

Publication Number Publication Date
JP2011066033A JP2011066033A (ja) 2011-03-31
JP2011066033A5 true JP2011066033A5 (enExample) 2011-11-10
JP4855506B2 JP4855506B2 (ja) 2012-01-18

Family

ID=43758463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009212727A Active JP4855506B2 (ja) 2009-09-15 2009-09-15 プラズマエッチング装置

Country Status (7)

Country Link
US (1) US20110303365A1 (enExample)
EP (1) EP2479781B1 (enExample)
JP (1) JP4855506B2 (enExample)
KR (1) KR101224143B1 (enExample)
CN (1) CN102318043B (enExample)
TW (1) TW201110229A (enExample)
WO (1) WO2011033850A1 (enExample)

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
GB201309583D0 (en) * 2013-05-29 2013-07-10 Spts Technologies Ltd Apparatus for processing a semiconductor workpiece
CN104241070A (zh) * 2013-06-24 2014-12-24 中微半导体设备(上海)有限公司 用于感应耦合等离子体腔室的气体注入装置
CN105336559B (zh) * 2014-08-14 2018-01-09 北京北方华创微电子装备有限公司 一种反应腔室及半导体加工设备
KR101680850B1 (ko) * 2016-06-28 2016-11-29 주식회사 기가레인 배기유로의 크기가 조절되는 플라즈마 처리 장치
CN108155080A (zh) * 2016-12-02 2018-06-12 北京北方华创微电子装备有限公司 等离子体产生装置及包括该装置的半导体设备
KR102070544B1 (ko) * 2019-04-17 2020-01-29 주식회사 기가레인 플라즈마 안테나 및 이를 포함하는 플라즈마 처리장치
JP6909824B2 (ja) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
US20220319809A1 (en) * 2019-12-23 2022-10-06 Hitachi High-Tech Corporation Plasma processing apparatus
CN111508802B (zh) * 2020-04-22 2023-10-13 北京北方华创微电子装备有限公司 反应腔室及其刻蚀方法
US11521834B2 (en) 2020-08-26 2022-12-06 Tokyo Electron Limited Plasma processing systems and methods for chemical processing a substrate
US12131888B2 (en) * 2020-08-31 2024-10-29 Tokyo Electron Limited Gas cluster assisted plasma processing
CN119943711B (zh) * 2024-12-25 2025-10-17 启东新微智造科技有限公司 一种集成光电子器件制造的蚀刻机构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267690B2 (ja) * 1992-09-22 2002-03-18 マツダ株式会社 エアバッグ装置
JPH08107101A (ja) * 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
JPH08186095A (ja) * 1994-12-28 1996-07-16 Kawasaki Steel Corp コンタクトホールの形成方法およびエッチング装置
US6352049B1 (en) * 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
KR100829288B1 (ko) * 1998-12-11 2008-05-13 서페이스 테크놀로지 시스템스 피엘씨 플라즈마 처리장치
DE10024883A1 (de) * 2000-05-19 2001-11-29 Bosch Gmbh Robert Plasmaätzanlage
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
JP2008028022A (ja) * 2006-07-19 2008-02-07 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
KR100963287B1 (ko) * 2008-02-22 2010-06-11 주식회사 유진테크 기판처리장치 및 기판처리방법

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