JP2011009249A5 - - Google Patents

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Publication number
JP2011009249A5
JP2011009249A5 JP2009148189A JP2009148189A JP2011009249A5 JP 2011009249 A5 JP2011009249 A5 JP 2011009249A5 JP 2009148189 A JP2009148189 A JP 2009148189A JP 2009148189 A JP2009148189 A JP 2009148189A JP 2011009249 A5 JP2011009249 A5 JP 2011009249A5
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JP
Japan
Prior art keywords
plate
insulating plate
gas hole
gas
upper electrode
Prior art date
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Granted
Application number
JP2009148189A
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English (en)
Japanese (ja)
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JP2011009249A (ja
JP5455462B2 (ja
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Priority to JP2009148189A priority Critical patent/JP5455462B2/ja
Priority claimed from JP2009148189A external-priority patent/JP5455462B2/ja
Priority to KR1020090074674A priority patent/KR101109069B1/ko
Priority to US12/546,783 priority patent/US20100319854A1/en
Publication of JP2011009249A publication Critical patent/JP2011009249A/ja
Publication of JP2011009249A5 publication Critical patent/JP2011009249A5/ja
Application granted granted Critical
Publication of JP5455462B2 publication Critical patent/JP5455462B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009148189A 2009-06-23 2009-06-23 プラズマ処理装置 Active JP5455462B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009148189A JP5455462B2 (ja) 2009-06-23 2009-06-23 プラズマ処理装置
KR1020090074674A KR101109069B1 (ko) 2009-06-23 2009-08-13 플라즈마처리장치
US12/546,783 US20100319854A1 (en) 2009-06-23 2009-08-25 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009148189A JP5455462B2 (ja) 2009-06-23 2009-06-23 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011009249A JP2011009249A (ja) 2011-01-13
JP2011009249A5 true JP2011009249A5 (enExample) 2012-07-26
JP5455462B2 JP5455462B2 (ja) 2014-03-26

Family

ID=43353259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009148189A Active JP5455462B2 (ja) 2009-06-23 2009-06-23 プラズマ処理装置

Country Status (3)

Country Link
US (1) US20100319854A1 (enExample)
JP (1) JP5455462B2 (enExample)
KR (1) KR101109069B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
CN102797012A (zh) * 2012-07-27 2012-11-28 京东方科技集团股份有限公司 一种刻蚀设备及其上部电极
JP2014082354A (ja) 2012-10-17 2014-05-08 Hitachi High-Technologies Corp プラズマ処理装置
JP6368808B2 (ja) * 2017-01-31 2018-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR20210039422A (ko) * 2018-07-30 2021-04-09 노드슨 코포레이션 플라즈마로 작업편을 처리하기 위한 시스템
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
TWI766219B (zh) 2019-01-07 2022-06-01 日商愛發科股份有限公司 真空處理裝置及真空處理裝置之清潔方法
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法
CN113802110A (zh) * 2020-06-13 2021-12-17 拓荆科技股份有限公司 一种提高清洗效率的等离子腔室

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JP4454781B2 (ja) 2000-04-18 2010-04-21 東京エレクトロン株式会社 プラズマ処理装置
JP2003068718A (ja) 2001-08-28 2003-03-07 Hitachi Ltd プラズマ処理装置
JP4364667B2 (ja) * 2004-02-13 2009-11-18 東京エレクトロン株式会社 溶射部材、電極、およびプラズマ処理装置
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4819411B2 (ja) * 2005-06-22 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
JP4707588B2 (ja) * 2006-03-16 2011-06-22 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる電極
JP5150217B2 (ja) 2007-11-08 2013-02-20 東京エレクトロン株式会社 シャワープレート及び基板処理装置

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