JP2005251803A5 - - Google Patents
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- Publication number
- JP2005251803A5 JP2005251803A5 JP2004056618A JP2004056618A JP2005251803A5 JP 2005251803 A5 JP2005251803 A5 JP 2005251803A5 JP 2004056618 A JP2004056618 A JP 2004056618A JP 2004056618 A JP2004056618 A JP 2004056618A JP 2005251803 A5 JP2005251803 A5 JP 2005251803A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma processing
- processing apparatus
- perforated plate
- plasma
- active species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056618A JP2005251803A (ja) | 2004-03-01 | 2004-03-01 | プラズマ処理装置およびその設計方法 |
| US11/064,975 US20050194097A1 (en) | 2004-03-01 | 2005-02-25 | Plasma processing apparatus and method of designing the same |
| TW094105927A TWI257130B (en) | 2004-03-01 | 2005-02-25 | Plasma processing apparatus and method of designing the same |
| KR1020050016322A KR100712172B1 (ko) | 2004-03-01 | 2005-02-28 | 플라스마 처리장치 및 그의 설계방법 |
| CN2005100518242A CN100407380C (zh) | 2004-03-01 | 2005-03-01 | 等离子体处理设备以及设计等离子体处理设备的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056618A JP2005251803A (ja) | 2004-03-01 | 2004-03-01 | プラズマ処理装置およびその設計方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005251803A JP2005251803A (ja) | 2005-09-15 |
| JP2005251803A5 true JP2005251803A5 (enExample) | 2007-04-19 |
Family
ID=34908925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004056618A Withdrawn JP2005251803A (ja) | 2004-03-01 | 2004-03-01 | プラズマ処理装置およびその設計方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050194097A1 (enExample) |
| JP (1) | JP2005251803A (enExample) |
| KR (1) | KR100712172B1 (enExample) |
| CN (1) | CN100407380C (enExample) |
| TW (1) | TWI257130B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088199A (ja) * | 2005-09-22 | 2007-04-05 | Canon Inc | 処理装置 |
| CN100405537C (zh) * | 2005-12-07 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应装置 |
| JP2009545101A (ja) * | 2006-07-20 | 2009-12-17 | アビザ テクノロジー リミティド | プラズマ源 |
| CN101490789B (zh) | 2006-07-20 | 2011-04-13 | 阿维扎技术有限公司 | 离子源 |
| WO2008009889A1 (en) * | 2006-07-20 | 2008-01-24 | Aviza Technology Limited | Ion deposition apparatus |
| GB0616131D0 (en) * | 2006-08-14 | 2006-09-20 | Oxford Instr Plasma Technology | Surface processing apparatus |
| KR101682155B1 (ko) * | 2015-04-20 | 2016-12-02 | 주식회사 유진테크 | 기판 처리 장치 |
| JP7097809B2 (ja) * | 2018-12-28 | 2022-07-08 | 東京エレクトロン株式会社 | ガス導入構造、処理装置及び処理方法 |
| CN116538517B (zh) * | 2022-01-26 | 2025-11-11 | 思脉瑞(北京)科技有限公司 | 艾烟香烟净化装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01149964A (ja) * | 1987-12-04 | 1989-06-13 | Furukawa Electric Co Ltd:The | プラズマcvd装置用シャワー電極 |
| JPH07101685B2 (ja) * | 1989-01-26 | 1995-11-01 | 富士通株式会社 | マイクロ波プラズマ処理装置 |
| JP2886752B2 (ja) * | 1991-11-05 | 1999-04-26 | キヤノン株式会社 | 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置 |
| US5487875A (en) * | 1991-11-05 | 1996-01-30 | Canon Kabushiki Kaisha | Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device |
| JPH06204181A (ja) * | 1992-12-29 | 1994-07-22 | Ibiden Co Ltd | プラズマエッチング用電極板 |
| JPH0845910A (ja) * | 1994-07-29 | 1996-02-16 | Nippon Steel Corp | プラズマ処理装置 |
| US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
| US5976261A (en) * | 1996-07-11 | 1999-11-02 | Cvc Products, Inc. | Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment |
| JPH11350143A (ja) * | 1998-06-02 | 1999-12-21 | Toshiba Corp | 成膜装置 |
| JP2000058294A (ja) * | 1998-08-07 | 2000-02-25 | Furontekku:Kk | プラズマ処理装置 |
| US6331754B1 (en) * | 1999-05-13 | 2001-12-18 | Tokyo Electron Limited | Inductively-coupled-plasma-processing apparatus |
| JP2001023955A (ja) * | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | プラズマ処理装置 |
| JP3889280B2 (ja) | 2002-01-07 | 2007-03-07 | 忠弘 大見 | プラズマ処理装置 |
-
2004
- 2004-03-01 JP JP2004056618A patent/JP2005251803A/ja not_active Withdrawn
-
2005
- 2005-02-25 US US11/064,975 patent/US20050194097A1/en not_active Abandoned
- 2005-02-25 TW TW094105927A patent/TWI257130B/zh not_active IP Right Cessation
- 2005-02-28 KR KR1020050016322A patent/KR100712172B1/ko not_active Expired - Fee Related
- 2005-03-01 CN CN2005100518242A patent/CN100407380C/zh not_active Expired - Fee Related
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