CN100407380C - 等离子体处理设备以及设计等离子体处理设备的方法 - Google Patents

等离子体处理设备以及设计等离子体处理设备的方法 Download PDF

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Publication number
CN100407380C
CN100407380C CN2005100518242A CN200510051824A CN100407380C CN 100407380 C CN100407380 C CN 100407380C CN 2005100518242 A CN2005100518242 A CN 2005100518242A CN 200510051824 A CN200510051824 A CN 200510051824A CN 100407380 C CN100407380 C CN 100407380C
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CN
China
Prior art keywords
plasma
porous plate
hole
distribution
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005100518242A
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English (en)
Chinese (zh)
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CN1664996A (zh
Inventor
内山信三
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Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1664996A publication Critical patent/CN1664996A/zh
Application granted granted Critical
Publication of CN100407380C publication Critical patent/CN100407380C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2005100518242A 2004-03-01 2005-03-01 等离子体处理设备以及设计等离子体处理设备的方法 Expired - Fee Related CN100407380C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法
JP2004056618 2004-03-01

Publications (2)

Publication Number Publication Date
CN1664996A CN1664996A (zh) 2005-09-07
CN100407380C true CN100407380C (zh) 2008-07-30

Family

ID=34908925

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005100518242A Expired - Fee Related CN100407380C (zh) 2004-03-01 2005-03-01 等离子体处理设备以及设计等离子体处理设备的方法

Country Status (5)

Country Link
US (1) US20050194097A1 (enExample)
JP (1) JP2005251803A (enExample)
KR (1) KR100712172B1 (enExample)
CN (1) CN100407380C (enExample)
TW (1) TWI257130B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088199A (ja) * 2005-09-22 2007-04-05 Canon Inc 処理装置
CN100405537C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应装置
JP2009545101A (ja) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
WO2008009889A1 (en) * 2006-07-20 2008-01-24 Aviza Technology Limited Ion deposition apparatus
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN116538517B (zh) * 2022-01-26 2025-11-11 思脉瑞（北京）科技有限公司 艾烟香烟净化装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024748A (en) * 1989-01-26 1991-06-18 Fujitsu Limited Microwave plasma processing apparatus
JPH05345982A (ja) * 1991-11-05 1993-12-27 Canon Inc 無端環状導波管を有するマイクロ波導入装置及び 該装置を備えたプラズマ処理装置
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US20020088542A1 (en) * 1999-07-07 2002-07-11 Kazuyasu Nishikawa Plasma processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
US5487875A (en) * 1991-11-05 1996-01-30 Canon Kabushiki Kaisha Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device
JPH06204181A (ja) * 1992-12-29 1994-07-22 Ibiden Co Ltd プラズマエッチング用電極板
JPH0845910A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP3889280B2 (ja) 2002-01-07 2007-03-07 忠弘 大見 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5024748A (en) * 1989-01-26 1991-06-18 Fujitsu Limited Microwave plasma processing apparatus
JPH05345982A (ja) * 1991-11-05 1993-12-27 Canon Inc 無端環状導波管を有するマイクロ波導入装置及び 該装置を備えたプラズマ処理装置
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US20020088542A1 (en) * 1999-07-07 2002-07-11 Kazuyasu Nishikawa Plasma processing apparatus

Also Published As

Publication number Publication date
KR20060043213A (ko) 2006-05-15
US20050194097A1 (en) 2005-09-08
TW200540988A (en) 2005-12-16
JP2005251803A (ja) 2005-09-15
TWI257130B (en) 2006-06-21
CN1664996A (zh) 2005-09-07
KR100712172B1 (ko) 2007-04-27

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Granted publication date: 20080730

Termination date: 20210301