KR100712172B1 - 플라스마 처리장치 및 그의 설계방법 - Google Patents

플라스마 처리장치 및 그의 설계방법 Download PDF

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Publication number
KR100712172B1
KR100712172B1 KR1020050016322A KR20050016322A KR100712172B1 KR 100712172 B1 KR100712172 B1 KR 100712172B1 KR 1020050016322 A KR1020050016322 A KR 1020050016322A KR 20050016322 A KR20050016322 A KR 20050016322A KR 100712172 B1 KR100712172 B1 KR 100712172B1
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South Korea
Prior art keywords
plasma
plasma processing
processing apparatus
perforated plate
holes
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Expired - Fee Related
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KR1020050016322A
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English (en)
Korean (ko)
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KR20060043213A (ko
Inventor
신조 우치야마
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20060043213A publication Critical patent/KR20060043213A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020050016322A 2004-03-01 2005-02-28 플라스마 처리장치 및 그의 설계방법 Expired - Fee Related KR100712172B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法
JPJP-P-2004-00056618 2004-03-01

Publications (2)

Publication Number Publication Date
KR20060043213A KR20060043213A (ko) 2006-05-15
KR100712172B1 true KR100712172B1 (ko) 2007-04-27

Family

ID=34908925

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050016322A Expired - Fee Related KR100712172B1 (ko) 2004-03-01 2005-02-28 플라스마 처리장치 및 그의 설계방법

Country Status (5)

Country Link
US (1) US20050194097A1 (enExample)
JP (1) JP2005251803A (enExample)
KR (1) KR100712172B1 (enExample)
CN (1) CN100407380C (enExample)
TW (1) TWI257130B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088199A (ja) * 2005-09-22 2007-04-05 Canon Inc 処理装置
CN100405537C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应装置
JP2009545101A (ja) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
WO2008009889A1 (en) * 2006-07-20 2008-01-24 Aviza Technology Limited Ion deposition apparatus
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法
CN116538517B (zh) * 2022-01-26 2025-11-11 思脉瑞（北京）科技有限公司 艾烟香烟净化装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
JPH06204181A (ja) * 1992-12-29 1994-07-22 Ibiden Co Ltd プラズマエッチング用電極板
JPH0845910A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置
JP2003203869A (ja) 2002-01-07 2003-07-18 Tadahiro Omi プラズマ処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07101685B2 (ja) * 1989-01-26 1995-11-01 富士通株式会社 マイクロ波プラズマ処理装置
JP2886752B2 (ja) * 1991-11-05 1999-04-26 キヤノン株式会社 無端環状導波管を有するマイクロ波導入装置及び該装置を備えたプラズマ処理装置
US5487875A (en) * 1991-11-05 1996-01-30 Canon Kabushiki Kaisha Microwave introducing device provided with an endless circular waveguide and plasma treating apparatus provided with said device
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
JPH11350143A (ja) * 1998-06-02 1999-12-21 Toshiba Corp 成膜装置
JP2000058294A (ja) * 1998-08-07 2000-02-25 Furontekku:Kk プラズマ処理装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP2001023955A (ja) * 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149964A (ja) * 1987-12-04 1989-06-13 Furukawa Electric Co Ltd:The プラズマｃｖｄ装置用シャワー電極
JPH06204181A (ja) * 1992-12-29 1994-07-22 Ibiden Co Ltd プラズマエッチング用電極板
JPH0845910A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置
JP2003203869A (ja) 2002-01-07 2003-07-18 Tadahiro Omi プラズマ処理装置

Also Published As

Publication number Publication date
KR20060043213A (ko) 2006-05-15
US20050194097A1 (en) 2005-09-08
TW200540988A (en) 2005-12-16
JP2005251803A (ja) 2005-09-15
TWI257130B (en) 2006-06-21
CN1664996A (zh) 2005-09-07
CN100407380C (zh) 2008-07-30

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