US20050194097A1 - Plasma processing apparatus and method of designing the same - Google Patents

Plasma processing apparatus and method of designing the same Download PDF

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Publication number
US20050194097A1
US20050194097A1 US11/064,975 US6497505A US2005194097A1 US 20050194097 A1 US20050194097 A1 US 20050194097A1 US 6497505 A US6497505 A US 6497505A US 2005194097 A1 US2005194097 A1 US 2005194097A1
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Prior art keywords
plasma
porous plate
holes
distribution
plasma processing
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US11/064,975
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English (en)
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Shinzo Uchiyama
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Canon Inc
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Canon Inc
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Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: UCHIYAMA, SHINZO
Publication of US20050194097A1 publication Critical patent/US20050194097A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma

Definitions

  • This invention relates generally to a plasma processing apparatus such as, for example, an etching apparatus, a nitriding apparatus or an oxidation apparatus, for example, to be used in a semiconductor manufacturing process for semiconductor substrate or liquid crystal substrate, for example. More particularly, the invention concerns a plasma processing apparatus by which the amount of plasma active species or active molecules adjacent a substrate (object to be processed) can be made into desired density (or concentration) and distribution.
  • the process uniformity over the semiconductor substrate surface is very important in plasma processing apparatuses.
  • Use of a porous plate is an example.
  • Japanese Laid-Open Patent Application, Publication No. 2000-58294 shows a CVD (chemical vapor deposition) apparatus wherein, for assuring deposition of a thin film upon a semiconductor substrate with uniform thickness, the thickness of a porous plate is changed to control the amount of reaction gas supply to individual points on the semiconductor substrate surface.
  • the thickness distribution of the porous plate is determined on the basis of viscous flow relational equation that the gas flow rate through the hole is proportional to the square of the depth, while referring to the results of experiments.
  • this prior art example is suitably applicable to a case wherein a thin film is to be uniformely deposited on a semiconductor substrate, it is unsuitable to a case, such as etching, wherein a semiconductor is to be processed with relatively low pressure.
  • the thickness difference should be made large for performing the gas flow rate control based on the thickness distribution of the porous plate and another need that the porous plate should be made as thin as possible to enable efficient ion utilization.
  • Japanese Laid-Open Patent Application, Publication No. 11-350143 shows a porous plate which is applicable to an ethcing apparatus.
  • a microwave transmission window is provided on a surface to be opposed to a semiconductor substrate, and plasma is produced by the microwave.
  • the microwave transmission window comprises three windows.
  • the uppermost window serves to isolate the atmosphere and the vacuum from each other.
  • the middle and bottom windows are formed with small holes for conductance, and a reaction gas is supplied to a semiconductor substrate surface uniformly.
  • This microwave transmission window having three windows and functioning as a porous plate as well is arranged so that the pressure inside the window is made high and also that the space between them is made narrow, to thereby prevent electric discharge inside the window of three-window structure.
  • This prior art example is based on the concept that the amount of reaction gas supply to individual points on the semiconductor substrate surface is made uniform by means of the microwave transmission window (porous plate) so that uniform plasma is produced at the bottom of the microwave transmission window (porous plate), by which the amount of plasma ion supply to the individual points on the semiconductor substrate surface is made uniform. Furthermore, a slot antenna having a hole is provided to produce uniform plasma at underneath the microwave transmission window, thereby to make the microwave transmission distribution approximately uniform.
  • the slot antenna is designed to provide approximately uniform microwave transmission distribution, although this enables that uniform microwave plasma is produced at underneath the microwave transmission window in a particular restrited condition, but in other conditions it is difficult to produce uniform microwave plasma there. Presumably, this is because, since the surface wave mode is variable with plasma density, plasma can not be excited stably.
  • a plasma processing apparatus comprising: a plasma producing portion; and a porous plate provided between said plasma producing portion and an object to be processed, wherein said porous plate has a plurality of holes which are made non-uniform with respect to at least one of shape, size and disposition.
  • a plasma processing apparatus comprising: a plasma producing portion; and a porous plate provided between said plasma producing portion and an object to be processed, wherein said porous plate has a plurality of holes being shaped and disposed as determined on the basis of an active species distribution at said plasma producing portion and of diffusion calculation, so that plasma active species adjacent the object to be processed has desired density and distribution.
  • a method of designing a plasma processing apparatus having a plasma producing portion and a porous plate provided between said plasma producing portion and an object to be processed comprising: determining a shape and disposition of holes of the porous plate on the basis of active species distribution at the plasma producing portion and of diffusion calculation, so that plasma active species adjacent the object has desired density and distribution.
  • a porous plate having holes which are non-uniform with respect to shape, size and/or distribution is used, by which various densities and distributions of plasma active species can be provided.
  • the shape, size and distribution of the holes may be determined in accordance with the active species distribution at the plasma producing portion and with diffusion calculation. This effectively removes the necessity of huge time and efforts required by the trial and error works, and a porous plate that assures desired plasma active species density and distribution can be accomplished easily and conveniently.
  • FIG. 1 is a schematic view of a microwave plasma processing apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a schematic view of a porous plate according to the first embodiment of the present invention.
  • FIG. 3 is a graph for explaining the function and effect of the porous plate according to the first embodiment of the present invention.
  • FIG. 4 is a graph for explaining the function and effect of a porous plate according to a second embodiment of the present invention.
  • FIG. 5 is a schematic view of a porous plate according to a third embodiment of the present invention.
  • FIG. 6 is a schematic view for explaining disposition of slots in a fourth embodiment of the present invention.
  • FIG. 7 is a sectional view of a porous plate according to a fifth embodiment of the present invention.
  • a plasma processing apparatus comprises a plasma processing portion and a porous plate provided between the plasma processing portion and a substrate to be processed, wherein the shape and disposition of holes of the porous plate are determined on the basis of active species density distribution at the plasma producing portion and the diffusion calculation, so as to ensure that the plasma active species adjacent the substrate has uniform distribution.
  • the porous plate is designed on the basis of the active species density distribution at the plasma producing portion and of diffusion calculation.
  • the active species density distribution at the plasma producing portion can be detected by use of an electron probe, for example.
  • Q is the diffusion amount
  • D is a diffusion coefficient
  • ⁇ N is a density difference
  • L is a length
  • S is an area.
  • Q′ N ⁇ C ⁇ S (2).
  • Q′ is the amount of recombination quenching
  • N is a plasma density
  • C is a coefficient
  • S is an area.
  • the area and disposition of the holes are determined so as to make the plasma density adjacent the substrate uniform.
  • holes at or close to a region having higher plasma production density have a smaller diameter, while holes at or close to a region having lower plasma production density have a larger diameter.
  • the thickness of the porous plate only in a portion around holes having a relatively large sectional area may be made smaller, so as to further decrease the plasma recombination quenching at the hole wall, while holes having a relatively small sectional area may be increased to keep the balance as a whole. This enables provision of a plasma processing apparatus in which the plasma passing rate is enlarged while keeping the uniformity of plasma distribution adjacent the substrate.
  • the porous plate may be made of a material having a thermal expansion coefficient approximately smaller than 1 ⁇ 10 ⁇ 5 /° C. and, in that occasion, the change in shape of the porous plate whose temperature can be increased up to 500° C. during plasma processing can be well suppressed. Hence, this enables provision of a plasma processing apparatus in which plasma active species distribution adjacent the substrate can be made stably uniform.
  • the hole diameters of the porous plate are generally in a range of 1 mm to 50 mm, and a processing precision of approximately 0.1 mm is required.
  • the porous plate is used in a condition approximately under 500° C.
  • the thermal expansion coefficient may preferably be smaller than approx. 1 ⁇ 10 ⁇ 5 /° C. More preferably, it may be made of a material having a thermal expansion coefficient smaller than 1 ⁇ 10 ⁇ 6 /° C., such as quartz which is silicon-containing ceramics.
  • the sectional areas of all the holes of the porous plate may be enlarged or contracted approximately at the same ratio. This enables provision of a plasma processing apparatus by which the plasma active species density adjacent a substrate to be processed can be changed easily and conveniently, without changing the plasma active species distribution adjacent the substrate. This can be accomplished since the amount of plasma that passes through the holes of the porous plate by diffusion is approximately proportional to the total sectional area of all the holes of the porous plate.
  • the porous plate may be formed such that the centers of the holes thereof are distributed on approximately coaxial and concentric circles, and yet those holes being disposed along the same circle have approximately the same sectional area. This enables provision of a plasma processing apparatus by which a circular substrate having similar central symmetry, such as a semiconductor substrate, can be plasma processed precisely and uniformly.
  • the porous plate may be formed with holes having centers disposed approximately equidistantly with each other. This enables provision of a plasma processing apparatus by which the whole surface of a substrate can be plasma processed evenly.
  • the hole sectional area of the porous plate may be made slightly large to ensure that the active species adjacent the substrate can include ions. This enables provision of a plasma processing apparatus in which ions are main reaction factor as like in an etching process or nitriding process.
  • the hole sectional area of the porous plate may be made slightly small to ensure that the active species adjacent the substrate consists of neutral radical. This enables provision of a plasma processing apparatus which can perform plasma processing that does not cause large degradation of the characteristic of a semiconductor device, as like in an oxidation process using oxygen radical as a main component.
  • the plasma processing apparatus may comprise a plasma processing chamber having a dielectric member for substantially transmitting microwaves, microwave introducing means for introducing microwaves into the plasma processing chamber, a substrate, and a porous plate provided between the substrate and the dielectric member, the apparatus being arranged to excite surface wave plasma on the basis of microwaves.
  • a plasma processing apparatus by which the plasma producing portion can be localized adjacent the dielectric member and the porous plate can be designed precisely and easily.
  • microwaves are confined in adjacent the dielectric member by means of the plasma produced by the microwaves.
  • it has a feature that plasma is produced only adjacent the dielectric member and it is conveyed by diffusion toward a substrate 2 .
  • the holes of the porous plate and the disposition of them can be designed with good precision.
  • the microwaves may be introduced into the plasma processing chamber by use of an endless circular waveguide with slots. This enables provision of a plasma processing apparatus by which the plasma producing portion density distribution is less influenced by a plasma processing condition such as gas pressure or type of gas used, for example, and by which a single porous plate can be applied under a wide variety of plasma processing conditions.
  • a plasma processing condition such as gas pressure or type of gas used, for example, and by which a single porous plate can be applied under a wide variety of plasma processing conditions.
  • the porous plate it is not necessary that the porous plate have holes distributed along coaxial and concentric circles. They may be disposed anyway as desired. Furthermore, the shape of the holes is not limited to circular. Any shape may be used such as, for example, rectangular, triangle or star-like (pentagram).
  • the porous plate of the present invention can be applied to any types of plasma processing apparatus as long as the plasma producing portion is localized. For example, it may be microwave plasma or inductively coupled plasma (ICP).
  • FIG. 1 denoted at 1 is a plasma processing chamber of cylindrical shape, and denoted at 2 is a substrate to be processed.
  • Denoted at 3 is a substrate carrying table for carrying a substrate 2 thereon.
  • Denoted at 4 is a porous plate, and denoted at 5 is a processing gas introducing means.
  • Denoted at 6 is an exhaust port, and denoted at 8 is an endless circular waveguide with slots, for introducing microwaves into the plasma processing chamber 1 .
  • Denoted at 11 are slots which are formed in the circular waveguide 8 with a pitch corresponding to a half or quarter of the wavelength of the microwave inside the tube.
  • Denoted at 7 is a dielectric material window for introducing microwaves into the plasma processing chamber, and denoted at 10 is a cooling water flowpassage formed in the waveguide 8 .
  • the inner wall of the plasma processing chamber 1 and the dielectric material window 7 are made of quartz that does not cause metal contamination of the substrate 2 .
  • the substrate carrying table 3 is made of ceramics that contains aluminum nitride as a main composition.
  • the porous plate 4 is made of quartz having a thermal expansion coefficient 5 ⁇ 10 ⁇ 7 /° C. (being hardly thermally expanded) and it does not cause metal contamination.
  • the sectional area and disposition of each hole are designed on the basis of plasma producing portion density distribution, produced adjacent the dielectric material window 7 , and the diffusion as well.
  • the central symmetry of the waveguide 8 and the cylindrical plasma processing chamber 1 is taken into account and, as shown in FIG. 2 , the holes are made with a cylindrical shape and they are distributed at the center and along some concentric circles, approximately equidistantly with each other. Furthermore, while central symmetry is similarly taken into account, those holes disposed along one and the same circle have approximately the same sectional area.
  • the distance between adjacent holes is approximately equal to 20 mm.
  • the hole diameter is approximately within a range of 10 to 20 mm.
  • the ratio (hereinafter, “opening ratio”) between the total sectional area of all the holes and the sectional area of the plasma processing chamber 1 is approximately equal to 0.2.
  • nitiriding processing performed to the surface of a substrate 2 by use of the plasma processing apparatus of this embodiment will be explained.
  • a silicon substrate having an oxide film of 2 nm thickness formed on its surface was conveyed by conveying means (not shown) toward the substrate carrying table 3 , and it was placed on the table.
  • the processing chamber 1 was exhausted by means of an exhausting system (not shown) to a level not greater than 0.1 Pa.
  • nitrogen 500 sccm was introduced into the plasma processing chamber 1 through the processing gas introducing means 5 .
  • a conductance valve (not shown) provided in the exhausting system was adjusted to keep the processing chamber 1 at 130 Pa.
  • a microwave voltage source is actuated to supply microwaves of 1.5 kW into the plasma processing chamber 1 through the endless circular waveguide 8 and the dielectric material window 7 , whereby plasma was produced inside the plasma processing chamber 1 .
  • the microwaves can no more enter the plasma and, as a result, the plasma is produced only at the polar surface of the dielectric material window 7 . Nitrogen ions in the plasma advance and arrive at the porous plate while being diffused.
  • the porous plate 4 of the microwave plasma processing apparatus according to the first embodiment was replaced by a porous plate having an opening ratio of about 0.1, and nitride processing was performed to a substrate 2 in a similar manner as the first embodiment.
  • the sectional area of each hole of the porous plate 4 used in the second embodiment is a half of that of the porous plate used in the first embodiment.
  • the hole diameter is 1/ ⁇ square root ⁇ 2 (square root of 2), and approximately it is within the range of 7 to 15 mm.
  • the disposition of holes of the porous plate 4 is similar to the first embodiment.
  • the sectional areas of all the holes of the porous plate can be enlarged or contracted approximately at a constant ratio, and, by doing so, a plasma processing apparatus by which the nitride film thickness can be increased or decreased conveniently while well keeping the nitride processing uniformity, is accomplished.
  • the porous plate 4 of the microwave plasma processing apparatus according to the first embodiment was replaced by a porous plate 4 shown in FIG. 5 , and nitride processing was performed to a substrate 2 in a similar manner as the first embodiment.
  • the holes of the porous plate 4 used in the third embodiment those holes placed along the first concentric circle, from the center, of the porous plate used in the first embodiment are removed while, on the other hand, the central hole is enlarged in size.
  • the opening ratio is made approximately equal to 0.22. Because the holes at the first concentric circle from the center are removed, a sufficient interval between adjacent holes can be assured even though the opening ratio is expanded to approx. 0.22. Hence, a sufficient mechanical strength of the porous plate is obtainable.
  • the interval between adjacent coaxial and concentric circles of the porous plate may be changed appropriately, and it enables provision of a plasma processing apparatus by which the opening ratio can be made large while maintaining the strength of the porous plate by keeping sufficient intervals between holes, and by which the process speed is made high.
  • the slots of the microwave plasma processing apparatus according to the first embodiment were changed into arcuate shape as shown in FIG. 6 , and also the porous plate 4 was replaced by one having an opening ratio of approximately 0.3, corresponding to the plasma producing portion density distribution to be produced by these slots.
  • Nitride processing was performed in a similar manner as the first embodiment.
  • the opening ratio can be enlarged approximately by 50% as compared with the first embodiment.
  • the opening ration is determined so as to avoid interference between the central hole of the porous plate and the holes adjacent it; whereas according to the fourth embodiment, since the plasma producing portion density distribution is expanded uniformly throughout the whole surface of the dielectric material window 7 , the hole diameters become even and interference between adjacent holes hardly occur. Hence, the opening ratio can be made large.
  • slot disposition that can provide a more uniform plasma-producing-portion density distribution may be used, and it enables provision of a plasma processing apparatus by which the opening ratio can be made large and the process speed can be made high.
  • the porous plate 4 of the microwave plasma processing apparatus according to the first embodiment was replaced by a porous plate 4 having an opening ratio of about 0.21, and nitride processing was performed to a substrate 2 in a similar manner as the first embodiment.
  • the thickness of a region of the porous plate around a hole having a relatively large diameter is made thin as shown in FIG. 7 .
  • plasma recombination quenching at the hole wall is reduced. Since the diameter of holes having relatively small diameter is enlarged to keep the balance as a whole, the opening ratio of the porous plate 4 can be made large.
  • the thickness of a region around a hole of the porous plate, having relatively large diameter can be made thin, and it enables provision of a plasma processing apparatus by which holes of relatively small diameters can be enlarged in diameter and by which the process speed can be made high.
  • a porous plate having large hole diameter may be used to decrease the contact area between plasma and the hole wall and to suppress plasma recombination quenching.
  • the substrate process time can be shortened and, on the other hand, the process uniformity over the substrate surface is assured.
  • the porous plate may be designed in accordance with the density distribution at the plasma producing portion and the diffusion calculation as well. Thus, huge time and efforts required for the trial and error works can be removed, and a porous plate can be provided easily and conveniently.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
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  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
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US11/064,975 2004-03-01 2005-02-25 Plasma processing apparatus and method of designing the same Abandoned US20050194097A1 (en)

Applications Claiming Priority (2)

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JP056618/2004(PAT.) 2004-03-01
JP2004056618A JP2005251803A (ja) 2004-03-01 2004-03-01 プラズマ処理装置およびその設計方法

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US (1) US20050194097A1 (enExample)
JP (1) JP2005251803A (enExample)
KR (1) KR100712172B1 (enExample)
CN (1) CN100407380C (enExample)
TW (1) TWI257130B (enExample)

Cited By (6)

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US20070062645A1 (en) * 2005-09-22 2007-03-22 Canon Kabushiki Kaisha Processing apparatus
US20080035608A1 (en) * 2006-08-14 2008-02-14 Thomas Owain P Surface processing apparatus
US20100084569A1 (en) * 2006-07-20 2010-04-08 Gary Proudfoot Ion deposition apparatus
US20100108905A1 (en) * 2006-07-20 2010-05-06 Aviza Technology Limited Plasma sources
US8354652B2 (en) 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
CN116538517A (zh) * 2022-01-26 2023-08-04 思脉瑞（北京）科技有限公司 艾烟香烟净化装置

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CN100405537C (zh) * 2005-12-07 2008-07-23 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体反应装置
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
JP7097809B2 (ja) * 2018-12-28 2022-07-08 東京エレクトロン株式会社 ガス導入構造、処理装置及び処理方法

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US6513452B2 (en) * 1994-12-15 2003-02-04 Applied Materials Inc. Adjusting DC bias voltage in plasma chamber
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Cited By (9)

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Publication number Priority date Publication date Assignee Title
US20070062645A1 (en) * 2005-09-22 2007-03-22 Canon Kabushiki Kaisha Processing apparatus
US20100084569A1 (en) * 2006-07-20 2010-04-08 Gary Proudfoot Ion deposition apparatus
US20100108905A1 (en) * 2006-07-20 2010-05-06 Aviza Technology Limited Plasma sources
US8354652B2 (en) 2006-07-20 2013-01-15 Aviza Technology Limited Ion source including separate support systems for accelerator grids
US8400063B2 (en) 2006-07-20 2013-03-19 Aviza Technology Limited Plasma sources
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
US20080035608A1 (en) * 2006-08-14 2008-02-14 Thomas Owain P Surface processing apparatus
KR101410515B1 (ko) * 2006-08-14 2014-06-20 옥스포드 인스트루먼츠 나노테크놀로지 툴스 리미티드 표면 프로세싱 장치들
CN116538517A (zh) * 2022-01-26 2023-08-04 思脉瑞（北京）科技有限公司 艾烟香烟净化装置

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TWI257130B (en) 2006-06-21
KR20060043213A (ko) 2006-05-15

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