SG10201808641QA - Electrode for plasma processing chamber - Google Patents

Electrode for plasma processing chamber

Info

Publication number
SG10201808641QA
SG10201808641QA SG10201808641QA SG10201808641QA SG10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA SG 10201808641Q A SG10201808641Q A SG 10201808641QA
Authority
SG
Singapore
Prior art keywords
plate
electrode
plasma processing
electrical conductivity
high electrical
Prior art date
Application number
SG10201808641QA
Inventor
Evan Edward Patton
John Daugherty
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG10201808641QA publication Critical patent/SG10201808641QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

24 Electrode for Plasma Processing Chamber An electrode for transmitting radio frequency power to a plasma processing region includes a plate formed of semiconducting material and a high electrical conductivity layer formed on a top surface of the plate and integral with the plate. The high electrical conductivity layer has a lower electrical resistance than the semiconducting material of the plate. The 10 electrode includes a distribution of through-holes. Each through-hole extends through an entire thickness of the electrode from a top surface of the high electrical conductivity layer to a bottom surface of the plate. In some embodiments, the plate can be formed of a silicon material and the high electrical conductivity layer can be a silicide material formed from the silicon material of the plate. 15 Fig. 1
SG10201808641QA 2017-10-17 2018-10-01 Electrode for plasma processing chamber SG10201808641QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/785,983 US10964514B2 (en) 2017-10-17 2017-10-17 Electrode for plasma processing chamber

Publications (1)

Publication Number Publication Date
SG10201808641QA true SG10201808641QA (en) 2019-05-30

Family

ID=66097109

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201808641QA SG10201808641QA (en) 2017-10-17 2018-10-01 Electrode for plasma processing chamber

Country Status (6)

Country Link
US (1) US10964514B2 (en)
JP (2) JP7254473B2 (en)
KR (2) KR102612617B1 (en)
CN (1) CN109994352B (en)
SG (1) SG10201808641QA (en)
TW (1) TWI803524B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017100192A1 (en) * 2017-01-06 2018-07-12 Cinogy Gmbh Permanent wound dressing with plasma electrode
WO2024053563A1 (en) * 2022-09-09 2024-03-14 東京エレクトロン株式会社 Electrode plate, electrode assembly, and plasma processing device

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2890493B2 (en) * 1989-07-10 1999-05-17 ソニー株式会社 Plasma processing apparatus and plasma processing method
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6251216B1 (en) * 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2003068722A (en) * 2001-08-30 2003-03-07 Hitachi Ltd Plasma processing apparatus
US20030185729A1 (en) 2002-03-29 2003-10-02 Ho Ko Electrode assembly for processing a semiconductor substrate and processing apparatus having the same
JP2006165093A (en) * 2004-12-03 2006-06-22 Tokyo Electron Ltd Plasma processing device
JP5082246B2 (en) 2006-01-20 2012-11-28 東京エレクトロン株式会社 Electrode for generating plasma, plasma processing apparatus, and method for manufacturing electrode for generating plasma
US7619179B2 (en) * 2006-01-20 2009-11-17 Tokyo Electron Limited Electrode for generating plasma and plasma processing apparatus using same
JP4935149B2 (en) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 Electrode plate for plasma processing and plasma processing apparatus
US7649316B2 (en) * 2007-07-13 2010-01-19 Micron Technology, Inc. Assemblies for plasma-enhanced treatment of substrates
JP5264231B2 (en) * 2008-03-21 2013-08-14 東京エレクトロン株式会社 Plasma processing equipment
JP5294669B2 (en) * 2008-03-25 2013-09-18 東京エレクトロン株式会社 Plasma processing equipment
US8679288B2 (en) * 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
US8221582B2 (en) * 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
SG169960A1 (en) * 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
SG170717A1 (en) * 2009-11-02 2011-05-30 Lam Res Corp Hot edge ring with sloped upper surface
JP5592129B2 (en) * 2010-03-16 2014-09-17 東京エレクトロン株式会社 Plasma processing equipment
JP5563347B2 (en) * 2010-03-30 2014-07-30 東京エレクトロン株式会社 Plasma processing apparatus and semiconductor device manufacturing method
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US8470127B2 (en) * 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP6068849B2 (en) * 2012-07-17 2017-01-25 東京エレクトロン株式会社 Upper electrode and plasma processing apparatus
US9275840B2 (en) * 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
CN204927231U (en) * 2015-08-27 2015-12-30 上海至纯洁净系统科技股份有限公司 Electrode structure

Also Published As

Publication number Publication date
CN109994352B (en) 2023-07-18
JP2023078436A (en) 2023-06-06
KR20190043081A (en) 2019-04-25
JP7485817B2 (en) 2024-05-16
KR102612617B1 (en) 2023-12-11
US20190115189A1 (en) 2019-04-18
TW201929033A (en) 2019-07-16
TWI803524B (en) 2023-06-01
JP2019091885A (en) 2019-06-13
KR20230169913A (en) 2023-12-18
US10964514B2 (en) 2021-03-30
JP7254473B2 (en) 2023-04-10
CN109994352A (en) 2019-07-09

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