JP2007250967A5 - - Google Patents

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Publication number
JP2007250967A5
JP2007250967A5 JP2006074372A JP2006074372A JP2007250967A5 JP 2007250967 A5 JP2007250967 A5 JP 2007250967A5 JP 2006074372 A JP2006074372 A JP 2006074372A JP 2006074372 A JP2006074372 A JP 2006074372A JP 2007250967 A5 JP2007250967 A5 JP 2007250967A5
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JP
Japan
Prior art keywords
mounting table
substrate
ring portion
processing apparatus
plasma processing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006074372A
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Japanese (ja)
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JP2007250967A (en
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Publication date
Application filed filed Critical
Priority to JP2006074372A priority Critical patent/JP2007250967A/en
Priority claimed from JP2006074372A external-priority patent/JP2007250967A/en
Priority to US11/685,308 priority patent/US7988814B2/en
Priority to KR1020070025713A priority patent/KR20070094522A/en
Priority to TW096109199A priority patent/TWI411034B/en
Priority to CN2007100883758A priority patent/CN101038849B/en
Priority to CN2010101475014A priority patent/CN101807509B/en
Publication of JP2007250967A publication Critical patent/JP2007250967A/en
Priority to KR1020090008912A priority patent/KR100959706B1/en
Publication of JP2007250967A5 publication Critical patent/JP2007250967A5/ja
Priority to US13/176,407 priority patent/US20110272100A1/en
Pending legal-status Critical Current

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Claims (17)

処理チャンバー内に配置された載置台上に被処理基板を載置させ,高周波電圧を与えることにより処理チャンバー内にプラズマを発生させて,被処理基板を処理するプラズマ処理装置であって,
前記載置台上に載置された被処理基板の周囲を囲むように配置されるフォーカスリングを備え,
前記フォーカスリングは,前記載置台上に載置された被処理基板の周囲外側に配置された導電性材料からなる外側リング部と,前記載置台上に載置された被処理基板の周縁部下方に所定の間隔を開けて配置された導電性材料からなる内側リング部を備え,
前記内側リング部と前記載置台の間は電気的に絶縁されていることを特徴とする,プラズマ処理装置。
A plasma processing apparatus for processing a substrate to be processed by placing the substrate to be processed on a mounting table disposed in the processing chamber and generating a plasma in the processing chamber by applying a high frequency voltage.
A focus ring arranged so as to surround the substrate to be processed placed on the mounting table;
The focus ring includes an outer ring portion made of a conductive material arranged on the outer periphery of the substrate to be processed placed on the mounting table, and a lower peripheral portion of the substrate to be processed placed on the mounting table. Provided with an inner ring portion made of a conductive material arranged at a predetermined interval,
The plasma processing apparatus, wherein the inner ring portion and the mounting table are electrically insulated.
前記外側リング部と前記内側リング部は,電気的に導通しており,前記外側リング部と前記載置台の間は絶縁されていることを特徴とする,請求項1に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1, wherein the outer ring part and the inner ring part are electrically connected, and the outer ring part and the mounting table are insulated from each other. 前記外側リング部および前記内側リング部と前記載置台の間に絶縁部材が配置されていることを特徴とする,請求項2に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 2, wherein an insulating member is disposed between the outer ring part and the inner ring part and the mounting table. 前記外側リング部と前記内側リング部は,一体的に形成されていることを特徴とする,請求項2または3に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 2, wherein the outer ring portion and the inner ring portion are integrally formed. 前記載置台上に載置された被処理基板の外周面とそれに対向する前記フォーカスリングの内周面との間隔が,前記内側リング部の上面と前記載置台上に載置された被処理基板の周縁部の下面との間隔よりも広いことを特徴とする,請求項4に記載のプラズマ処理装置。 The distance between the outer peripheral surface of the substrate to be processed placed on the mounting table and the inner peripheral surface of the focus ring facing the substrate is the upper surface of the inner ring portion and the substrate to be processed mounted on the mounting table. The plasma processing apparatus according to claim 4, wherein the plasma processing apparatus is wider than a distance from a lower surface of the peripheral edge of the substrate. 前記外側リング部および前記内側リング部は,グランドに対して電気的に絶縁されていることを特徴とする,請求項2〜5のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to claim 2, wherein the outer ring portion and the inner ring portion are electrically insulated from a ground. 前記外側リング部と前記内側リング部は,電気的に絶縁されていることを特徴とする,請求項1に記載のプラズマ処理装置。The plasma processing apparatus according to claim 1, wherein the outer ring portion and the inner ring portion are electrically insulated. 前記外側リング部は,前記載置台に電気的に導通していることを特徴とする,請求項7に記載のプラズマ処理装置。The plasma processing apparatus according to claim 7, wherein the outer ring portion is electrically connected to the mounting table. 前記外側リング部の上面は,前記載置台上に載置された被処理基板の周囲に配置された,外側に向かって次第に高くなる傾斜面部と,前記傾斜面部の外側に連続して形成された水平面部を有することを特徴とする,請求項1〜8のいずれかに記載のプラズマ処理装置。The upper surface of the outer ring portion is formed continuously on the outer side of the inclined surface portion and the inclined surface portion which is arranged around the substrate to be processed placed on the mounting table and gradually increases toward the outside. The plasma processing apparatus according to claim 1, further comprising a horizontal plane part. 高周波電圧を与えることにより処理チャンバー内にプラズマを発生させて,被処理基板を処理するプラズマ処理装置において,前記処理チャンバー内に配置された載置台上の被処理基板の周囲を囲むように配置されるフォーカスリングであって,In a plasma processing apparatus for processing a substrate to be processed by generating a plasma in the processing chamber by applying a high frequency voltage, the plasma processing apparatus is disposed so as to surround the substrate to be processed on a mounting table disposed in the processing chamber. A focus ring,
前記載置台上に載置された被処理基板の周囲外側に配置される導電性材料からなる外側リング部と,前記載置台上に載置された被処理基板の周縁部下方に所定の間隔を開けて配置される導電性材料からなる内側リング部を備え,  A predetermined interval is provided below the outer ring portion made of a conductive material disposed on the outer periphery of the substrate to be processed placed on the mounting table, and below the peripheral portion of the substrate to be processed placed on the mounting table. It has an inner ring part made of conductive material that is placed open,
前記内側リング部と前記載置台の間は電気的に絶縁されていることを特徴とする,フォーカスリング。  The focus ring, wherein the inner ring portion and the mounting table are electrically insulated.
前記外側リング部と前記内側リング部は,電気的に導通しており,前記外側リング部および前記内側リング部と前記載置台の間を絶縁するための絶縁部材を備えることを特徴とする,請求項10に記載のフォーカスリング。The outer ring portion and the inner ring portion are electrically connected, and include an insulating member for insulating between the outer ring portion and the inner ring portion and the mounting table. Item 11. The focus ring according to Item 10. 前記外側リング部と前記内側リング部は,一体的に形成されていることを特徴とする,請求項11に記載のフォーカスリング。The focus ring according to claim 11, wherein the outer ring portion and the inner ring portion are integrally formed. 前記載置台上に載置された被処理基板の外周面に対向する内周面に凹部が形成されていることを特徴とする,請求項12に記載のフォーカスリング。13. The focus ring according to claim 12, wherein a concave portion is formed on an inner peripheral surface facing the outer peripheral surface of the substrate to be processed placed on the mounting table. 前記外側リング部と前記内側リング部を電気的に絶縁させる絶縁部材を備えることを特徴とする,請求項10に記載のフォーカスリング。The focus ring according to claim 10, further comprising an insulating member that electrically insulates the outer ring portion and the inner ring portion. 前記外側リング部は,前記載置台に電気的に導通して設置されることを特徴とする,請求項14に記載のフォーカスリング。The focus ring according to claim 14, wherein the outer ring part is installed in electrical conduction with the mounting table. 前記外側リング部の上面は,前記載置台上に載置された被処理基板の周囲に配置された,外側に向かって次第に高くなる傾斜面部と,前記傾斜面部の外側に連続して形成された水平面部を有することを特徴とする,請求項10〜15のいずれかに記載のフォーカスリング。The upper surface of the outer ring portion is formed continuously on the outer side of the inclined surface portion and the inclined surface portion which is arranged around the substrate to be processed placed on the mounting table and gradually increases toward the outside. The focus ring according to claim 10, further comprising a horizontal plane portion. 請求項10〜16のいずれかに記載のフォーカスリングと,前記処理チャンバー内において前記載置台上の被処理基板の周囲を囲むように前記フォーカスリングを配置させる支持部材とからなることを特徴とする,フォーカスリング部品。The focus ring according to any one of claims 10 to 16, and a support member that arranges the focus ring so as to surround the substrate to be processed on the mounting table in the processing chamber. , Focus ring parts.
JP2006074372A 2006-03-17 2006-03-17 Plasma treating apparatus and method, and focus ring Pending JP2007250967A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006074372A JP2007250967A (en) 2006-03-17 2006-03-17 Plasma treating apparatus and method, and focus ring
US11/685,308 US7988814B2 (en) 2006-03-17 2007-03-13 Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
KR1020070025713A KR20070094522A (en) 2006-03-17 2007-03-15 Plasma process apparatus, focus ring, focus ring component and plasma process method
CN2010101475014A CN101807509B (en) 2006-03-17 2007-03-16 Plasma treating apparatus and focus ring
CN2007100883758A CN101038849B (en) 2006-03-17 2007-03-16 Plasma processing apparatus, plasma processing method and focus ring
TW096109199A TWI411034B (en) 2006-03-17 2007-03-16 A plasma processing apparatus and a method and a focusing ring
KR1020090008912A KR100959706B1 (en) 2006-03-17 2009-02-04 Plasma process apparatus, focus ring, focus ring component and plasma process method
US13/176,407 US20110272100A1 (en) 2006-03-17 2011-07-05 Plasma processing apparatus, plasma processing method, focus ring, and focus ring component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006074372A JP2007250967A (en) 2006-03-17 2006-03-17 Plasma treating apparatus and method, and focus ring

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012034034A Division JP5313375B2 (en) 2012-02-20 2012-02-20 Plasma processing apparatus and focus ring and focus ring component

Publications (2)

Publication Number Publication Date
JP2007250967A JP2007250967A (en) 2007-09-27
JP2007250967A5 true JP2007250967A5 (en) 2009-04-02

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JP2006074372A Pending JP2007250967A (en) 2006-03-17 2006-03-17 Plasma treating apparatus and method, and focus ring

Country Status (4)

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JP (1) JP2007250967A (en)
KR (2) KR20070094522A (en)
CN (2) CN101038849B (en)
TW (1) TWI411034B (en)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447394B (en) * 2007-11-28 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 Method for improving back pollution of work piece during manufacturing process of semiconductor
JP2009187673A (en) * 2008-02-01 2009-08-20 Nec Electronics Corp Plasma treatment device and method
CN102017057B (en) * 2008-05-02 2012-11-28 欧瑞康太阳能股份公司(特吕巴赫) Plasma treatment apparatus and method for plasma-assisted treatment of substrates
JP2010045200A (en) * 2008-08-13 2010-02-25 Tokyo Electron Ltd Focus ring, and plasma processing apparatus and method
EP2342951B1 (en) * 2008-10-31 2019-03-06 Lam Research Corporation Lower electrode assembly of plasma processing chamber
JP2010278166A (en) * 2009-05-27 2010-12-09 Tokyo Electron Ltd Annular component for plasma treatment, and plasma treatment device
JP5227264B2 (en) 2009-06-02 2013-07-03 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, program
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2013149634A (en) * 2010-05-11 2013-08-01 Sharp Corp Dry etching device
JP2013149635A (en) * 2010-05-11 2013-08-01 Sharp Corp Dry etching device
JP5690596B2 (en) 2011-01-07 2015-03-25 東京エレクトロン株式会社 Focus ring and substrate processing apparatus having the focus ring
JP2012169552A (en) * 2011-02-16 2012-09-06 Tokyo Electron Ltd Cooling mechanism, processing chamber, component in processing chamber, and cooling method
JP5741124B2 (en) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 Plasma processing equipment
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
CN105074869A (en) * 2013-06-26 2015-11-18 应用材料公司 Single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP5767373B2 (en) * 2014-07-29 2015-08-19 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing method, and storage medium for storing program for implementing the same
CN104715997A (en) * 2015-03-30 2015-06-17 上海华力微电子有限公司 Focusing ring and plasma processing device provided with same
JP6570971B2 (en) * 2015-05-27 2019-09-04 東京エレクトロン株式会社 Plasma processing apparatus and focus ring
KR102382823B1 (en) * 2015-09-04 2022-04-06 삼성전자주식회사 ring unit having air holes and substrate processing apparatus including the same
JP6607795B2 (en) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 Substrate processing equipment
JP6698502B2 (en) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 Mounting table and plasma processing device
KR102581226B1 (en) * 2016-12-23 2023-09-20 삼성전자주식회사 Plasma processing device
WO2018183245A1 (en) 2017-03-31 2018-10-04 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
KR102063108B1 (en) * 2017-10-30 2020-01-08 세메스 주식회사 Apparatus and method for treating substrate
JP7055040B2 (en) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 Placement device and processing device for the object to be processed
WO2019199822A2 (en) * 2018-04-10 2019-10-17 Applied Materials, Inc. Resolving spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition
JP6851706B2 (en) * 2018-05-30 2021-03-31 東芝三菱電機産業システム株式会社 Inert gas generator
JP2019220497A (en) * 2018-06-15 2019-12-26 東京エレクトロン株式会社 Mounting table and plasma processing device
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
JP7258562B2 (en) * 2019-01-11 2023-04-17 東京エレクトロン株式会社 Processing method and plasma processing apparatus
JP7278160B2 (en) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 Etching method and plasma processing apparatus
JP7278896B2 (en) * 2019-07-16 2023-05-22 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
KR102175990B1 (en) * 2020-01-09 2020-11-09 하나머티리얼즈(주) Focus Ring and plasma device including the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3205878B2 (en) * 1991-10-22 2001-09-04 アネルバ株式会社 Dry etching equipment
JP3531511B2 (en) * 1998-12-22 2004-05-31 株式会社日立製作所 Plasma processing equipment
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP2001185542A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Plasma processor and plasma processing method using the same
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP2001196357A (en) * 2000-01-11 2001-07-19 Matsushita Electric Ind Co Ltd Plasma treatment device
JP2002110652A (en) * 2000-10-03 2002-04-12 Rohm Co Ltd Plasma treatment method and its device
JP4676074B2 (en) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 Focus ring and plasma processing apparatus
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI234417B (en) * 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
JP4370789B2 (en) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 Plasma processing apparatus and variable impedance means calibration method
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP2004200219A (en) * 2002-12-16 2004-07-15 Tokyo Electron Ltd Treatment equipment and treatment method
JP4640922B2 (en) * 2003-09-05 2011-03-02 東京エレクトロン株式会社 Plasma processing equipment
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
KR100578129B1 (en) * 2003-09-19 2006-05-10 삼성전자주식회사 Plasma Etching Machine
JP2005303099A (en) 2004-04-14 2005-10-27 Hitachi High-Technologies Corp Apparatus and method for plasma processing
WO2005124844A1 (en) * 2004-06-21 2005-12-29 Tokyo Electron Limited Plasma processing device amd method

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