JP2007250967A5 - - Google Patents
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- Publication number
- JP2007250967A5 JP2007250967A5 JP2006074372A JP2006074372A JP2007250967A5 JP 2007250967 A5 JP2007250967 A5 JP 2007250967A5 JP 2006074372 A JP2006074372 A JP 2006074372A JP 2006074372 A JP2006074372 A JP 2006074372A JP 2007250967 A5 JP2007250967 A5 JP 2007250967A5
- Authority
- JP
- Japan
- Prior art keywords
- mounting table
- substrate
- ring portion
- processing apparatus
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 17
- 230000002093 peripheral Effects 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 4
- 210000002381 Plasma Anatomy 0.000 claims 2
Claims (17)
前記載置台上に載置された被処理基板の周囲を囲むように配置されるフォーカスリングを備え,
前記フォーカスリングは,前記載置台上に載置された被処理基板の周囲外側に配置された導電性材料からなる外側リング部と,前記載置台上に載置された被処理基板の周縁部下方に所定の間隔を開けて配置された導電性材料からなる内側リング部を備え,
前記内側リング部と前記載置台の間は電気的に絶縁されていることを特徴とする,プラズマ処理装置。 A plasma processing apparatus for processing a substrate to be processed by placing the substrate to be processed on a mounting table disposed in the processing chamber and generating a plasma in the processing chamber by applying a high frequency voltage.
A focus ring arranged so as to surround the substrate to be processed placed on the mounting table;
The focus ring includes an outer ring portion made of a conductive material arranged on the outer periphery of the substrate to be processed placed on the mounting table, and a lower peripheral portion of the substrate to be processed placed on the mounting table. Provided with an inner ring portion made of a conductive material arranged at a predetermined interval,
The plasma processing apparatus, wherein the inner ring portion and the mounting table are electrically insulated.
前記載置台上に載置された被処理基板の周囲外側に配置される導電性材料からなる外側リング部と,前記載置台上に載置された被処理基板の周縁部下方に所定の間隔を開けて配置される導電性材料からなる内側リング部を備え, A predetermined interval is provided below the outer ring portion made of a conductive material disposed on the outer periphery of the substrate to be processed placed on the mounting table, and below the peripheral portion of the substrate to be processed placed on the mounting table. It has an inner ring part made of conductive material that is placed open,
前記内側リング部と前記載置台の間は電気的に絶縁されていることを特徴とする,フォーカスリング。 The focus ring, wherein the inner ring portion and the mounting table are electrically insulated.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006074372A JP2007250967A (en) | 2006-03-17 | 2006-03-17 | Plasma treating apparatus and method, and focus ring |
US11/685,308 US7988814B2 (en) | 2006-03-17 | 2007-03-13 | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
KR1020070025713A KR20070094522A (en) | 2006-03-17 | 2007-03-15 | Plasma process apparatus, focus ring, focus ring component and plasma process method |
TW096109199A TWI411034B (en) | 2006-03-17 | 2007-03-16 | A plasma processing apparatus and a method and a focusing ring |
CN2007100883758A CN101038849B (en) | 2006-03-17 | 2007-03-16 | Plasma processing apparatus, plasma processing method and focus ring |
CN2010101475014A CN101807509B (en) | 2006-03-17 | 2007-03-16 | Plasma treating apparatus and focus ring |
KR1020090008912A KR100959706B1 (en) | 2006-03-17 | 2009-02-04 | Plasma process apparatus, focus ring, focus ring component and plasma process method |
US13/176,407 US20110272100A1 (en) | 2006-03-17 | 2011-07-05 | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006074372A JP2007250967A (en) | 2006-03-17 | 2006-03-17 | Plasma treating apparatus and method, and focus ring |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012034034A Division JP5313375B2 (en) | 2012-02-20 | 2012-02-20 | Plasma processing apparatus and focus ring and focus ring component |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007250967A JP2007250967A (en) | 2007-09-27 |
JP2007250967A5 true JP2007250967A5 (en) | 2009-04-02 |
Family
ID=38594919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006074372A Pending JP2007250967A (en) | 2006-03-17 | 2006-03-17 | Plasma treating apparatus and method, and focus ring |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2007250967A (en) |
KR (2) | KR20070094522A (en) |
CN (2) | CN101807509B (en) |
TW (1) | TWI411034B (en) |
Families Citing this family (34)
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CN101447394B (en) * | 2007-11-28 | 2012-01-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for improving back pollution of work piece during manufacturing process of semiconductor |
JP2009187673A (en) * | 2008-02-01 | 2009-08-20 | Nec Electronics Corp | Plasma treatment device and method |
CN102017057B (en) * | 2008-05-02 | 2012-11-28 | 欧瑞康太阳能股份公司(特吕巴赫) | Plasma treatment apparatus and method for plasma-assisted treatment of substrates |
JP2010045200A (en) * | 2008-08-13 | 2010-02-25 | Tokyo Electron Ltd | Focus ring, and plasma processing apparatus and method |
EP2342951B1 (en) * | 2008-10-31 | 2019-03-06 | Lam Research Corporation | Lower electrode assembly of plasma processing chamber |
JP2010278166A (en) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | Annular component for plasma treatment, and plasma treatment device |
JP5227264B2 (en) | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, program |
JP5496568B2 (en) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
JP2013149635A (en) * | 2010-05-11 | 2013-08-01 | Sharp Corp | Dry etching device |
JP2013149634A (en) * | 2010-05-11 | 2013-08-01 | Sharp Corp | Dry etching device |
JP5690596B2 (en) | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | Focus ring and substrate processing apparatus having the focus ring |
JP2012169552A (en) * | 2011-02-16 | 2012-09-06 | Tokyo Electron Ltd | Cooling mechanism, processing chamber, component in processing chamber, and cooling method |
JP5741124B2 (en) * | 2011-03-29 | 2015-07-01 | 東京エレクトロン株式会社 | Plasma processing equipment |
US9412579B2 (en) * | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
WO2014209492A1 (en) * | 2013-06-26 | 2014-12-31 | Applied Materials, Inc. | Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber |
US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
JP5767373B2 (en) * | 2014-07-29 | 2015-08-19 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and storage medium for storing program for implementing the same |
CN104715997A (en) * | 2015-03-30 | 2015-06-17 | 上海华力微电子有限公司 | Focusing ring and plasma processing device provided with same |
JP6570971B2 (en) * | 2015-05-27 | 2019-09-04 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
KR102382823B1 (en) * | 2015-09-04 | 2022-04-06 | 삼성전자주식회사 | ring unit having air holes and substrate processing apparatus including the same |
JP6607795B2 (en) * | 2016-01-25 | 2019-11-20 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP6698502B2 (en) * | 2016-11-21 | 2020-05-27 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
KR102581226B1 (en) * | 2016-12-23 | 2023-09-20 | 삼성전자주식회사 | Plasma processing device |
WO2018183245A1 (en) * | 2017-03-31 | 2018-10-04 | Mattson Technology, Inc. | Material deposition prevention on a workpiece in a process chamber |
KR102063108B1 (en) * | 2017-10-30 | 2020-01-08 | 세메스 주식회사 | Apparatus and method for treating substrate |
JP7055040B2 (en) * | 2018-03-07 | 2022-04-15 | 東京エレクトロン株式会社 | Placement device and processing device for the object to be processed |
KR20200130745A (en) * | 2018-04-10 | 2020-11-19 | 어플라이드 머티어리얼스, 인코포레이티드 | Resolution of spontaneous arcing during thick film deposition of high temperature amorphous carbon deposition |
JP6851706B2 (en) * | 2018-05-30 | 2021-03-31 | 東芝三菱電機産業システム株式会社 | Inert gas generator |
JP2019220497A (en) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
US11094511B2 (en) * | 2018-11-13 | 2021-08-17 | Applied Materials, Inc. | Processing chamber with substrate edge enhancement processing |
JP7258562B2 (en) * | 2019-01-11 | 2023-04-17 | 東京エレクトロン株式会社 | Processing method and plasma processing apparatus |
JP7278160B2 (en) * | 2019-07-01 | 2023-05-19 | 東京エレクトロン株式会社 | Etching method and plasma processing apparatus |
JP7278896B2 (en) | 2019-07-16 | 2023-05-22 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
KR102175990B1 (en) * | 2020-01-09 | 2020-11-09 | 하나머티리얼즈(주) | Focus Ring and plasma device including the same |
Family Cites Families (19)
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JP3205878B2 (en) * | 1991-10-22 | 2001-09-04 | アネルバ株式会社 | Dry etching equipment |
JP3531511B2 (en) * | 1998-12-22 | 2004-05-31 | 株式会社日立製作所 | Plasma processing equipment |
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JP2001185542A (en) * | 1999-12-27 | 2001-07-06 | Hitachi Ltd | Plasma processor and plasma processing method using the same |
US6363882B1 (en) * | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
JP2001196357A (en) * | 2000-01-11 | 2001-07-19 | Matsushita Electric Ind Co Ltd | Plasma treatment device |
JP2002110652A (en) * | 2000-10-03 | 2002-04-12 | Rohm Co Ltd | Plasma treatment method and its device |
JP4676074B2 (en) * | 2001-02-15 | 2011-04-27 | 東京エレクトロン株式会社 | Focus ring and plasma processing apparatus |
US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
JP4370789B2 (en) * | 2002-07-12 | 2009-11-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and variable impedance means calibration method |
US6896765B2 (en) * | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
JP2004200219A (en) * | 2002-12-16 | 2004-07-15 | Tokyo Electron Ltd | Treatment equipment and treatment method |
JP4640922B2 (en) * | 2003-09-05 | 2011-03-02 | 東京エレクトロン株式会社 | Plasma processing equipment |
TW200520632A (en) * | 2003-09-05 | 2005-06-16 | Tokyo Electron Ltd | Focus ring and plasma processing apparatus |
KR100578129B1 (en) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | Plasma Etching Machine |
JP2005303099A (en) | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | Apparatus and method for plasma processing |
CN102270577B (en) * | 2004-06-21 | 2014-07-23 | 东京毅力科创株式会社 | Plasma processing device and method |
-
2006
- 2006-03-17 JP JP2006074372A patent/JP2007250967A/en active Pending
-
2007
- 2007-03-15 KR KR1020070025713A patent/KR20070094522A/en not_active Application Discontinuation
- 2007-03-16 CN CN2010101475014A patent/CN101807509B/en active Active
- 2007-03-16 TW TW096109199A patent/TWI411034B/en active
- 2007-03-16 CN CN2007100883758A patent/CN101038849B/en active Active
-
2009
- 2009-02-04 KR KR1020090008912A patent/KR100959706B1/en active IP Right Grant
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