JP2019087666A5 - - Google Patents

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Publication number
JP2019087666A5
JP2019087666A5 JP2017215590A JP2017215590A JP2019087666A5 JP 2019087666 A5 JP2019087666 A5 JP 2019087666A5 JP 2017215590 A JP2017215590 A JP 2017215590A JP 2017215590 A JP2017215590 A JP 2017215590A JP 2019087666 A5 JP2019087666 A5 JP 2019087666A5
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JP
Japan
Prior art keywords
region
plasma
etching
etching method
processing gas
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JP2017215590A
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English (en)
Japanese (ja)
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JP6877316B2 (ja
JP2019087666A (ja
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Priority claimed from JP2017215590A external-priority patent/JP6877316B2/ja
Priority to JP2017215590A priority Critical patent/JP6877316B2/ja
Priority to TW107138708A priority patent/TWI815828B/zh
Priority to CN201811312127.1A priority patent/CN109755125B/zh
Priority to KR1020180135234A priority patent/KR102723940B1/ko
Priority to US16/182,774 priority patent/US10529583B2/en
Publication of JP2019087666A publication Critical patent/JP2019087666A/ja
Publication of JP2019087666A5 publication Critical patent/JP2019087666A5/ja
Publication of JP6877316B2 publication Critical patent/JP6877316B2/ja
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JP2017215590A 2017-11-08 2017-11-08 エッチング方法 Active JP6877316B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017215590A JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法
TW107138708A TWI815828B (zh) 2017-11-08 2018-11-01 蝕刻方法
CN201811312127.1A CN109755125B (zh) 2017-11-08 2018-11-06 蚀刻方法
KR1020180135234A KR102723940B1 (ko) 2017-11-08 2018-11-06 에칭 방법
US16/182,774 US10529583B2 (en) 2017-11-08 2018-11-07 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017215590A JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法

Publications (3)

Publication Number Publication Date
JP2019087666A JP2019087666A (ja) 2019-06-06
JP2019087666A5 true JP2019087666A5 (enExample) 2020-09-03
JP6877316B2 JP6877316B2 (ja) 2021-05-26

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ID=66328817

Family Applications (1)

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JP2017215590A Active JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法

Country Status (5)

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US (1) US10529583B2 (enExample)
JP (1) JP6877316B2 (enExample)
KR (1) KR102723940B1 (enExample)
CN (1) CN109755125B (enExample)
TW (1) TWI815828B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2021163839A (ja) * 2020-03-31 2021-10-11 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000043984A (ko) * 1998-12-29 2000-07-15 김영환 반도체 소자의 콘택홀 형성방법
US7056830B2 (en) * 2003-09-03 2006-06-06 Applied Materials, Inc. Method for plasma etching a dielectric layer
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6007143B2 (ja) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
JP6059165B2 (ja) * 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
JP6244518B2 (ja) * 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
JP2016136606A (ja) 2015-01-16 2016-07-28 東京エレクトロン株式会社 エッチング方法
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) * 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10026621B2 (en) * 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning

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