JP2019087666A - エッチング方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 142
- 238000005530 etching Methods 0.000 title claims abstract description 68
- 239000007789 gas Substances 0.000 claims abstract description 116
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 24
- 150000002500 ions Chemical class 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 18
- -1 hydrogen ions Chemical class 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 80
- 238000012545 processing Methods 0.000 claims description 62
- 238000009826 distribution Methods 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052756 noble gas Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 238000002407 reforming Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 59
- 125000004429 atom Chemical group 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 11
- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 101000911772 Homo sapiens Hsc70-interacting protein Proteins 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Abstract
Description
<実験における方法MTの条件>
工程ST1におけるシーケンスの実行回数:140回
工程ST11の条件
第1の処理ガス
3.4sccmのC4F6ガス
3.2sccmのO2ガス
400sccmのArガス
第1の高周波:60MHz、50W
第2の高周波:40MHz、50W
内部空間12sの圧力:10mTorr(1.33Pa)
各シーケンスにおける工程ST11の実行時間:4秒
工程ST12
希ガス:400sccmのArガス
第1の高周波:60MHz、50W
第2の高周波:40MHz、200W
内部空間12sの圧力:10mTorr(1.33Pa)
各シーケンスにおける工程ST12の実行時間:3秒
工程ST2(第1〜第6のサンプルのみに適用)
第1の高周波:60MHz、300W
第2の高周波:40MHz、50W
内部空間12sの圧力:20mTorr(2.66Pa)
工程ST3におけるシーケンスの実行回数:20回
工程ST31の条件
第1の処理ガス
3.4sccmのC4F6ガス
3.2sccmのO2ガス
400sccmのArガス
第1の高周波:60MHz、50W
第2の高周波:40MHz、50W
内部空間12sの圧力:10mTorr(1.33Pa)
各シーケンスにおける工程ST31の実行時間:4秒
工程ST32
希ガス:400sccmのArガス
第1の高周波:60MHz、50W
第2の高周波:40MHz、200W
内部空間12sの圧力:10mTorr(1.33Pa)
各シーケンスにおける工程ST32の実行時間:3秒
Claims (4)
- 被加工物のためのエッチング方法であって、
前記被加工物は、下地領域、第1の領域、及び第2の領域を有しており、
前記第2の領域は、窒化シリコンから形成されており、前記下地領域上でそれらの間に凹部を提供するように延在する第1の隆起領域及び第2の隆起領域、並びに、該凹部の下側で延在する底部領域を含み、
前記第1の領域は、酸化シリコンから形成されており、前記第2の領域を覆うように設けられており、
該エッチング方法は、
前記第1の領域をエッチングする工程と、
前記第1の領域がエッチングされた後に、前記底部領域を選択的に改質することにより、改質領域を形成する工程と、
前記改質領域をエッチングする工程と、
を含み、
前記第1の領域をエッチングする前記工程は、
前記第1の領域上にフルオロカーボンの堆積物を形成するために、フルオロカーボンガスを含む第1の処理ガスのプラズマを生成する工程と、
その上に前記堆積物が形成された前記被加工物に向けて希ガス原子のイオンを供給して前記第1の領域をエッチングするために、希ガスの第1のプラズマを生成する工程と、
を含み、
前記第1の領域をエッチングする前記工程では、露出された前記第2の領域上に前記堆積物が形成され、該第2の領域が前記堆積物によって保護され、
前記第1の隆起領域の上面及び前記第2の隆起領域の上面の上に形成された前記堆積物の厚みは、前記底部領域上に形成された前記堆積物の厚みよりも大きく、
前記改質領域を形成する前記工程では、水素を含む第2の処理ガスのプラズマが生成され、前記第1の領域がエッチングされた前記被加工物に、該第2の処理ガスの該プラズマから水素のイオンが供給され、
前記改質領域をエッチングする前記工程では、
前記改質領域を有する前記被加工物上にフルオロカーボンの堆積物を形成するために、フルオロカーボンガスを含む第3の処理ガスのプラズマを生成する工程と、
前記改質領域を有しその上に前記堆積物が形成された前記被加工物に向けて希ガス原子のイオンを供給して前記改質領域をエッチングするために、希ガスの第2のプラズマを生成する工程と、
を含む、
エッチング方法。 - 前記第2の処理ガスは、窒素ガスを更に含む、請求項1に記載のエッチング方法。
- 改質領域を形成する前記工程と前記改質領域をエッチングする前記工程とが交互に繰り返される、請求項1又は2に記載のエッチング方法。
- 前記第1の領域をエッチングする前記工程、改質領域を形成する前記工程、及び前記改質領域をエッチングする前記工程においてプラズマ処理装置が用いられ、
該プラズマ処理装置は、
内部空間を提供するチャンバ本体と、
下部電極を含み、被加工物の載置領域を提供し、前記内部空間の中に設けられた支持台であり、前記載置領域の中心は前記チャンバ本体の中心軸線上に位置する、該支持台と、
プラズマ生成用の高周波を発生するように構成された第1の高周波電源と、
前記第1の高周波の周波数よりも低い周波数を有する第2の高周波を発生するように構成された第2の高周波電源であり、前記下部電極に電気的に接続された、該第2の高周波電源と、
前記内部空間の中に磁場を形成するように構成された電磁石と、
を備え、
少なくとも前記第2の処理ガスの前記プラズマが生成されているときに、前記電磁石により、前記内部空間の中で、前記第1の領域がエッチングされた前記被加工物の中心上での水平成分よりも大きい水平成分を該被加工物のエッジ側の上で有する磁場の分布が形成される、
請求項1〜3の何れか一項に記載のエッチング方法。
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