TWI815828B - 蝕刻方法 - Google Patents

蝕刻方法 Download PDF

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Publication number
TWI815828B
TWI815828B TW107138708A TW107138708A TWI815828B TW I815828 B TWI815828 B TW I815828B TW 107138708 A TW107138708 A TW 107138708A TW 107138708 A TW107138708 A TW 107138708A TW I815828 B TWI815828 B TW I815828B
Authority
TW
Taiwan
Prior art keywords
region
gas
plasma
workpiece
etching
Prior art date
Application number
TW107138708A
Other languages
English (en)
Chinese (zh)
Other versions
TW201933470A (zh
Inventor
岩野光紘
細谷正德
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201933470A publication Critical patent/TW201933470A/zh
Application granted granted Critical
Publication of TWI815828B publication Critical patent/TWI815828B/zh

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Classifications

    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P50/267—
    • H10P50/283—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/722—
    • H10W20/069—
    • H10W20/083—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Magnetic Heads (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW107138708A 2017-11-08 2018-11-01 蝕刻方法 TWI815828B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-215590 2017-11-08
JP2017215590A JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法

Publications (2)

Publication Number Publication Date
TW201933470A TW201933470A (zh) 2019-08-16
TWI815828B true TWI815828B (zh) 2023-09-21

Family

ID=66328817

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107138708A TWI815828B (zh) 2017-11-08 2018-11-01 蝕刻方法

Country Status (5)

Country Link
US (1) US10529583B2 (enExample)
JP (1) JP6877316B2 (enExample)
KR (1) KR102723940B1 (enExample)
CN (1) CN109755125B (enExample)
TW (1) TWI815828B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2021163839A (ja) * 2020-03-31 2021-10-11 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201535517A (zh) * 2014-02-19 2015-09-16 東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
TW201612977A (en) * 2014-07-01 2016-04-01 Tokyo Electron Ltd Method for treating workpieces
TW201635371A (zh) * 2015-01-16 2016-10-01 Tokyo Electron Ltd 蝕刻方法（三）

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000043984A (ko) * 1998-12-29 2000-07-15 김영환 반도체 소자의 콘택홀 형성방법
US7056830B2 (en) * 2003-09-03 2006-06-06 Applied Materials, Inc. Method for plasma etching a dielectric layer
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6007143B2 (ja) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
JP6244518B2 (ja) * 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) * 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10026621B2 (en) * 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201535517A (zh) * 2014-02-19 2015-09-16 東京威力科創股份有限公司 蝕刻方法及電漿處理裝置
TW201612977A (en) * 2014-07-01 2016-04-01 Tokyo Electron Ltd Method for treating workpieces
TW201635371A (zh) * 2015-01-16 2016-10-01 Tokyo Electron Ltd 蝕刻方法（三）

Also Published As

Publication number Publication date
US10529583B2 (en) 2020-01-07
TW201933470A (zh) 2019-08-16
JP6877316B2 (ja) 2021-05-26
KR102723940B1 (ko) 2024-10-31
JP2019087666A (ja) 2019-06-06
US20190139780A1 (en) 2019-05-09
CN109755125A (zh) 2019-05-14
CN109755125B (zh) 2023-05-02
KR20190052633A (ko) 2019-05-16

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