JP6877316B2 - エッチング方法 - Google Patents

エッチング方法 Download PDF

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Publication number
JP6877316B2
JP6877316B2 JP2017215590A JP2017215590A JP6877316B2 JP 6877316 B2 JP6877316 B2 JP 6877316B2 JP 2017215590 A JP2017215590 A JP 2017215590A JP 2017215590 A JP2017215590 A JP 2017215590A JP 6877316 B2 JP6877316 B2 JP 6877316B2
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JP
Japan
Prior art keywords
region
gas
plasma
workpiece
etching
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Active
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JP2017215590A
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English (en)
Japanese (ja)
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JP2019087666A5 (enExample
JP2019087666A (ja
Inventor
光紘 岩野
光紘 岩野
正徳 細谷
正徳 細谷
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2017215590A priority Critical patent/JP6877316B2/ja
Priority to TW107138708A priority patent/TWI815828B/zh
Priority to CN201811312127.1A priority patent/CN109755125B/zh
Priority to KR1020180135234A priority patent/KR102723940B1/ko
Priority to US16/182,774 priority patent/US10529583B2/en
Publication of JP2019087666A publication Critical patent/JP2019087666A/ja
Publication of JP2019087666A5 publication Critical patent/JP2019087666A5/ja
Application granted granted Critical
Publication of JP6877316B2 publication Critical patent/JP6877316B2/ja
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    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P50/267—
    • H10P50/283—
    • H10P50/73—
    • H10P72/0421—
    • H10P72/722—
    • H10W20/069—
    • H10W20/083—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Magnetic Heads (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2017215590A 2017-11-08 2017-11-08 エッチング方法 Active JP6877316B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017215590A JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法
TW107138708A TWI815828B (zh) 2017-11-08 2018-11-01 蝕刻方法
CN201811312127.1A CN109755125B (zh) 2017-11-08 2018-11-06 蚀刻方法
KR1020180135234A KR102723940B1 (ko) 2017-11-08 2018-11-06 에칭 방법
US16/182,774 US10529583B2 (en) 2017-11-08 2018-11-07 Etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017215590A JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法

Publications (3)

Publication Number Publication Date
JP2019087666A JP2019087666A (ja) 2019-06-06
JP2019087666A5 JP2019087666A5 (enExample) 2020-09-03
JP6877316B2 true JP6877316B2 (ja) 2021-05-26

Family

ID=66328817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017215590A Active JP6877316B2 (ja) 2017-11-08 2017-11-08 エッチング方法

Country Status (5)

Country Link
US (1) US10529583B2 (enExample)
JP (1) JP6877316B2 (enExample)
KR (1) KR102723940B1 (enExample)
CN (1) CN109755125B (enExample)
TW (1) TWI815828B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2021163839A (ja) * 2020-03-31 2021-10-11 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000043984A (ko) * 1998-12-29 2000-07-15 김영환 반도체 소자의 콘택홀 형성방법
US7056830B2 (en) * 2003-09-03 2006-06-06 Applied Materials, Inc. Method for plasma etching a dielectric layer
US9165783B2 (en) * 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6007143B2 (ja) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
JP6059165B2 (ja) * 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
JP6244518B2 (ja) * 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6230954B2 (ja) * 2014-05-09 2017-11-15 東京エレクトロン株式会社 エッチング方法
JP6235981B2 (ja) * 2014-07-01 2017-11-22 東京エレクトロン株式会社 被処理体を処理する方法
JP6315809B2 (ja) * 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
JP6504827B2 (ja) * 2015-01-16 2019-04-24 東京エレクトロン株式会社 エッチング方法
JP2016136606A (ja) 2015-01-16 2016-07-28 東京エレクトロン株式会社 エッチング方法
US9865484B1 (en) * 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) * 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10026621B2 (en) * 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning

Also Published As

Publication number Publication date
TWI815828B (zh) 2023-09-21
US10529583B2 (en) 2020-01-07
TW201933470A (zh) 2019-08-16
KR102723940B1 (ko) 2024-10-31
JP2019087666A (ja) 2019-06-06
US20190139780A1 (en) 2019-05-09
CN109755125A (zh) 2019-05-14
CN109755125B (zh) 2023-05-02
KR20190052633A (ko) 2019-05-16

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