JP2008124111A5 - - Google Patents
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- Publication number
- JP2008124111A5 JP2008124111A5 JP2006303676A JP2006303676A JP2008124111A5 JP 2008124111 A5 JP2008124111 A5 JP 2008124111A5 JP 2006303676 A JP2006303676 A JP 2006303676A JP 2006303676 A JP2006303676 A JP 2006303676A JP 2008124111 A5 JP2008124111 A5 JP 2008124111A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas supply
- supply unit
- ceiling wall
- forming chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006303676A JP2008124111A (ja) | 2006-11-09 | 2006-11-09 | プラズマｃｖｄ法によるシリコン系薄膜の形成方法 |
| US12/513,362 US20100210093A1 (en) | 2006-11-09 | 2007-10-29 | Method for forming silicon-based thin film by plasma cvd method |
| PCT/JP2007/070994 WO2008056557A1 (en) | 2006-11-09 | 2007-10-29 | Method for forming silicon based thin film by plasma cvd method |
| CN2007800416922A CN101558473B (zh) | 2006-11-09 | 2007-10-29 | 利用等离子体cvd法的硅系薄膜的形成方法 |
| KR1020097009525A KR20090066317A (ko) | 2006-11-09 | 2007-10-29 | 플라즈마 ｃｖｄ법에 의한 실리콘계 박막의 형성방법 |
| TW097103750A TW200932942A (en) | 2006-11-09 | 2008-01-31 | Method for forming silicon thin film by plasma cvd method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006303676A JP2008124111A (ja) | 2006-11-09 | 2006-11-09 | プラズマｃｖｄ法によるシリコン系薄膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008124111A JP2008124111A (ja) | 2008-05-29 |
| JP2008124111A5 true JP2008124111A5 (enExample) | 2009-05-21 |
Family
ID=39364377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006303676A Pending JP2008124111A (ja) | 2006-11-09 | 2006-11-09 | プラズマｃｖｄ法によるシリコン系薄膜の形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100210093A1 (enExample) |
| JP (1) | JP2008124111A (enExample) |
| KR (1) | KR20090066317A (enExample) |
| CN (1) | CN101558473B (enExample) |
| TW (1) | TW200932942A (enExample) |
| WO (1) | WO2008056557A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008177419A (ja) * | 2007-01-19 | 2008-07-31 | Nissin Electric Co Ltd | シリコン薄膜形成方法 |
| US9028924B2 (en) | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| US8741394B2 (en) * | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| US8709551B2 (en) * | 2010-03-25 | 2014-04-29 | Novellus Systems, Inc. | Smooth silicon-containing films |
| KR102025441B1 (ko) | 2012-04-06 | 2019-09-25 | 노벨러스 시스템즈, 인코포레이티드 | 증착 후 소프트 어닐링 |
| US9117668B2 (en) | 2012-05-23 | 2015-08-25 | Novellus Systems, Inc. | PECVD deposition of smooth silicon films |
| US9388491B2 (en) | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
| US8895415B1 (en) | 2013-05-31 | 2014-11-25 | Novellus Systems, Inc. | Tensile stressed doped amorphous silicon |
| JP2017092142A (ja) * | 2015-11-05 | 2017-05-25 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| US20170294314A1 (en) * | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
| US10553427B2 (en) * | 2017-04-27 | 2020-02-04 | Applied Materials, Inc. | Low dielectric constant oxide and low resistance OP stack for 3D NAND application |
| JP7028001B2 (ja) * | 2018-03-20 | 2022-03-02 | 日新電機株式会社 | 成膜方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3507072B2 (ja) * | 1991-07-16 | 2004-03-15 | セイコーエプソン株式会社 | 化学気相推積装置及び半導体膜形成方法と薄膜半導体装置の製造方法 |
| JPH1081973A (ja) * | 1996-03-18 | 1998-03-31 | Hyundai Electron Ind Co Ltd | 誘導結合形プラズマｃｖｄ装置 |
| JP3680677B2 (ja) * | 2000-02-08 | 2005-08-10 | セイコーエプソン株式会社 | 半導体素子製造装置および半導体素子の製造方法 |
| JP2001316818A (ja) * | 2000-02-29 | 2001-11-16 | Canon Inc | 膜形成方法及び形成装置、並びにシリコン系膜、起電力素子及びそれを用いた太陽電池、センサー及び撮像素子 |
| JP2003068643A (ja) * | 2001-08-23 | 2003-03-07 | Japan Advanced Inst Of Science & Technology Hokuriku | 結晶性シリコン膜の作製方法及び太陽電池 |
| JP3894862B2 (ja) * | 2002-05-29 | 2007-03-22 | 京セラ株式会社 | Ｃａｔ−ＰＥＣＶＤ法 |
| US7186663B2 (en) * | 2004-03-15 | 2007-03-06 | Sharp Laboratories Of America, Inc. | High density plasma process for silicon thin films |
| JP4474596B2 (ja) * | 2003-08-29 | 2010-06-09 | キヤノンアネルバ株式会社 | シリコンナノ結晶構造体の形成方法及び形成装置 |
| JP4434115B2 (ja) * | 2005-09-26 | 2010-03-17 | 日新電機株式会社 | 結晶性シリコン薄膜の形成方法及び装置 |
| JP2007123008A (ja) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
| JP5162108B2 (ja) * | 2005-10-28 | 2013-03-13 | 日新電機株式会社 | プラズマ生成方法及び装置並びにプラズマ処理装置 |
| JP2008177419A (ja) * | 2007-01-19 | 2008-07-31 | Nissin Electric Co Ltd | シリコン薄膜形成方法 |
-
2006
- 2006-11-09 JP JP2006303676A patent/JP2008124111A/ja active Pending
-
2007
- 2007-10-29 US US12/513,362 patent/US20100210093A1/en not_active Abandoned
- 2007-10-29 WO PCT/JP2007/070994 patent/WO2008056557A1/ja not_active Ceased
- 2007-10-29 CN CN2007800416922A patent/CN101558473B/zh not_active Expired - Fee Related
- 2007-10-29 KR KR1020097009525A patent/KR20090066317A/ko not_active Ceased
-
2008
- 2008-01-31 TW TW097103750A patent/TW200932942A/zh unknown
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