JP2008176830A5 - - Google Patents

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Publication number
JP2008176830A5
JP2008176830A5 JP2007007239A JP2007007239A JP2008176830A5 JP 2008176830 A5 JP2008176830 A5 JP 2008176830A5 JP 2007007239 A JP2007007239 A JP 2007007239A JP 2007007239 A JP2007007239 A JP 2007007239A JP 2008176830 A5 JP2008176830 A5 JP 2008176830A5
Authority
JP
Japan
Prior art keywords
current
bit line
determination
semiconductor memory
determining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007007239A
Other languages
English (en)
Japanese (ja)
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JP2008176830A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007007239A priority Critical patent/JP2008176830A/ja
Priority claimed from JP2007007239A external-priority patent/JP2008176830A/ja
Priority to US11/905,646 priority patent/US7636263B2/en
Priority to CNA2007101820489A priority patent/CN101226778A/zh
Publication of JP2008176830A publication Critical patent/JP2008176830A/ja
Publication of JP2008176830A5 publication Critical patent/JP2008176830A5/ja
Withdrawn legal-status Critical Current

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JP2007007239A 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ Withdrawn JP2008176830A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007007239A JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ
US11/905,646 US7636263B2 (en) 2007-01-16 2007-10-03 Semiconductor memory having function to determine semiconductor low current
CNA2007101820489A CN101226778A (zh) 2007-01-16 2007-10-24 具有判定半导体微电流功能的半导体存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007007239A JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ

Publications (2)

Publication Number Publication Date
JP2008176830A JP2008176830A (ja) 2008-07-31
JP2008176830A5 true JP2008176830A5 (https=) 2010-02-04

Family

ID=39617645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007007239A Withdrawn JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ

Country Status (3)

Country Link
US (1) US7636263B2 (https=)
JP (1) JP2008176830A (https=)
CN (1) CN101226778A (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7480183B2 (en) * 2006-07-05 2009-01-20 Panasonic Corporation Semiconductor memory device, and read method and read circuit for the same
JP4937219B2 (ja) 2008-09-17 2012-05-23 株式会社東芝 不揮発性半導体記憶装置
CN101800082B (zh) * 2009-02-11 2012-12-05 北京兆易创新科技有限公司 一种用于mlc闪存的灵敏放大器和电流电压转换电路
KR101003866B1 (ko) * 2009-05-29 2010-12-30 주식회사 하이닉스반도체 불휘발성 메모리 소자의 비트라인 누설 전류 테스트 방법
JP5426250B2 (ja) * 2009-06-26 2014-02-26 三星電子株式会社 不揮発性半導体メモリの放電回路
US8064263B2 (en) * 2009-10-09 2011-11-22 Macronix International Co., Ltd. Current sink system for source-side sensing
CN102142283B (zh) * 2010-01-28 2013-03-13 中芯国际集成电路制造(上海)有限公司 非易失性存储器的测试方法
TWI422844B (zh) * 2011-07-06 2014-01-11 Etron Technology Inc 偵測記憶體中連接缺陷的方法與可偵測連接缺陷之記憶體
KR101332072B1 (ko) 2011-11-17 2014-01-22 서울시립대학교 산학협력단 전원장치에 사용되는 ic 회로
CN102426858B (zh) * 2011-11-30 2014-07-23 中国科学院微电子研究所 一种检测存储单元漏电流的方法及系统
JP2013254545A (ja) * 2012-06-08 2013-12-19 Sharp Corp 不揮発性半導体記憶装置、及び、可変抵抗素子の抵抗制御方法
CN103117094B (zh) * 2013-01-28 2017-02-08 上海华虹宏力半导体制造有限公司 闪存的测试方法
US20160254060A1 (en) * 2013-03-15 2016-09-01 Taqua Wbh, Llc High Speed And Low Power Sense Amplifier
CN104575614A (zh) * 2015-02-10 2015-04-29 武汉新芯集成电路制造有限公司 一种存储单元失效筛选的方法
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
JP6708962B2 (ja) * 2016-08-01 2020-06-10 ユナイテッド・セミコンダクター・ジャパン株式会社 半導体記憶装置及びその制御方法
US10255987B1 (en) * 2017-10-11 2019-04-09 Globalfoundries Inc. Margin test for one-time programmable memory (OTPM) array with common mode current source
CN111435154B (zh) * 2018-12-25 2022-08-09 北京兆易创新科技股份有限公司 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法
US11514968B2 (en) * 2020-03-26 2022-11-29 Micron Technology, Inc. Charge leakage detection for memory system reliability
TWI712040B (zh) * 2020-05-12 2020-12-01 力旺電子股份有限公司 具多階型記憶胞陣列之非揮發性記憶體及其相關讀取控制方法
CN115639397B (zh) * 2021-07-19 2025-07-18 无锡华润上华科技有限公司 cell电流测试电路及其测试方法
CN114758713B (zh) * 2022-06-14 2022-10-14 之江实验室 一种加速铁电存储器耐久性测试的电路和方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06251593A (ja) 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US6011416A (en) * 1997-02-19 2000-01-04 Harness System Technologies Research Ltd. Switch circuit having excess-current detection function
US6201747B1 (en) * 1999-09-30 2001-03-13 Advanced Micro Devices, Inc. Method and apparatus for measuring subthreshold current in a memory array
JP2002184190A (ja) * 2000-12-11 2002-06-28 Toshiba Corp 不揮発性半導体記憶装置
US6370061B1 (en) * 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
US6891768B2 (en) * 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
JP2005302809A (ja) 2004-04-07 2005-10-27 Toshiba Corp 半導体装置
US7405988B2 (en) * 2005-09-26 2008-07-29 Silicon Storage Technology, Inc. Method and apparatus for systematic and random variation and mismatch compensation for multilevel flash memory operation
US7477559B2 (en) * 2005-11-01 2009-01-13 Stmicroelectronics S.R.L. Sense amplifier for low-voltage applications

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