JP2008176830A - 半導体微少電流判定方法および手段、半導体メモリ - Google Patents

半導体微少電流判定方法および手段、半導体メモリ Download PDF

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Publication number
JP2008176830A
JP2008176830A JP2007007239A JP2007007239A JP2008176830A JP 2008176830 A JP2008176830 A JP 2008176830A JP 2007007239 A JP2007007239 A JP 2007007239A JP 2007007239 A JP2007007239 A JP 2007007239A JP 2008176830 A JP2008176830 A JP 2008176830A
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JP
Japan
Prior art keywords
current
bit line
determination
determining
semiconductor memory
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Application number
JP2007007239A
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English (en)
Japanese (ja)
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JP2008176830A5 (https=
Inventor
Toshiki Mori
俊樹 森
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2007007239A priority Critical patent/JP2008176830A/ja
Priority to US11/905,646 priority patent/US7636263B2/en
Priority to CNA2007101820489A priority patent/CN101226778A/zh
Publication of JP2008176830A publication Critical patent/JP2008176830A/ja
Publication of JP2008176830A5 publication Critical patent/JP2008176830A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2007007239A 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ Withdrawn JP2008176830A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007007239A JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ
US11/905,646 US7636263B2 (en) 2007-01-16 2007-10-03 Semiconductor memory having function to determine semiconductor low current
CNA2007101820489A CN101226778A (zh) 2007-01-16 2007-10-24 具有判定半导体微电流功能的半导体存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007007239A JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ

Publications (2)

Publication Number Publication Date
JP2008176830A true JP2008176830A (ja) 2008-07-31
JP2008176830A5 JP2008176830A5 (https=) 2010-02-04

Family

ID=39617645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007007239A Withdrawn JP2008176830A (ja) 2007-01-16 2007-01-16 半導体微少電流判定方法および手段、半導体メモリ

Country Status (3)

Country Link
US (1) US7636263B2 (https=)
JP (1) JP2008176830A (https=)
CN (1) CN101226778A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010073245A (ja) * 2008-09-17 2010-04-02 Toshiba Corp 不揮発性半導体記憶装置
JP2011008878A (ja) * 2009-06-26 2011-01-13 Samsung Electronics Co Ltd 不揮発性半導体メモリの放電回路
KR101332072B1 (ko) 2011-11-17 2014-01-22 서울시립대학교 산학협력단 전원장치에 사용되는 ic 회로
JP2016513852A (ja) * 2013-03-15 2016-05-16 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 高速・低電力センス増幅器
JP2018022541A (ja) * 2016-08-01 2018-02-08 三重富士通セミコンダクター株式会社 半導体記憶装置及びその制御方法
JP2023519182A (ja) * 2020-03-26 2023-05-10 マイクロン テクノロジー，インク． メモリシステムの信頼性のための電荷の漏れ検出

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7480183B2 (en) * 2006-07-05 2009-01-20 Panasonic Corporation Semiconductor memory device, and read method and read circuit for the same
CN101800082B (zh) * 2009-02-11 2012-12-05 北京兆易创新科技有限公司 一种用于mlc闪存的灵敏放大器和电流电压转换电路
KR101003866B1 (ko) * 2009-05-29 2010-12-30 주식회사 하이닉스반도체 불휘발성 메모리 소자의 비트라인 누설 전류 테스트 방법
US8064263B2 (en) * 2009-10-09 2011-11-22 Macronix International Co., Ltd. Current sink system for source-side sensing
CN102142283B (zh) * 2010-01-28 2013-03-13 中芯国际集成电路制造(上海)有限公司 非易失性存储器的测试方法
TWI422844B (zh) * 2011-07-06 2014-01-11 Etron Technology Inc 偵測記憶體中連接缺陷的方法與可偵測連接缺陷之記憶體
CN102426858B (zh) * 2011-11-30 2014-07-23 中国科学院微电子研究所 一种检测存储单元漏电流的方法及系统
JP2013254545A (ja) * 2012-06-08 2013-12-19 Sharp Corp 不揮発性半導体記憶装置、及び、可変抵抗素子の抵抗制御方法
CN103117094B (zh) * 2013-01-28 2017-02-08 上海华虹宏力半导体制造有限公司 闪存的测试方法
CN104575614A (zh) * 2015-02-10 2015-04-29 武汉新芯集成电路制造有限公司 一种存储单元失效筛选的方法
US9552864B1 (en) * 2016-03-11 2017-01-24 Micron Technology, Inc. Offset compensation for ferroelectric memory cell sensing
US10255987B1 (en) * 2017-10-11 2019-04-09 Globalfoundries Inc. Margin test for one-time programmable memory (OTPM) array with common mode current source
CN111435154B (zh) * 2018-12-25 2022-08-09 北京兆易创新科技股份有限公司 漏电检测电路、闪存存储器漏电检测装置和漏电检测方法
TWI712040B (zh) * 2020-05-12 2020-12-01 力旺電子股份有限公司 具多階型記憶胞陣列之非揮發性記憶體及其相關讀取控制方法
CN115639397B (zh) * 2021-07-19 2025-07-18 无锡华润上华科技有限公司 cell电流测试电路及其测试方法
CN114758713B (zh) * 2022-06-14 2022-10-14 之江实验室 一种加速铁电存储器耐久性测试的电路和方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06251593A (ja) 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US6011416A (en) * 1997-02-19 2000-01-04 Harness System Technologies Research Ltd. Switch circuit having excess-current detection function
US6201747B1 (en) * 1999-09-30 2001-03-13 Advanced Micro Devices, Inc. Method and apparatus for measuring subthreshold current in a memory array
JP2002184190A (ja) * 2000-12-11 2002-06-28 Toshiba Corp 不揮発性半導体記憶装置
US6370061B1 (en) * 2001-06-19 2002-04-09 Advanced Micro Devices, Inc. Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells
US6891768B2 (en) * 2002-11-13 2005-05-10 Hewlett-Packard Development Company, L.P. Power-saving reading of magnetic memory devices
JP2005302809A (ja) 2004-04-07 2005-10-27 Toshiba Corp 半導体装置
US7405988B2 (en) * 2005-09-26 2008-07-29 Silicon Storage Technology, Inc. Method and apparatus for systematic and random variation and mismatch compensation for multilevel flash memory operation
US7477559B2 (en) * 2005-11-01 2009-01-13 Stmicroelectronics S.R.L. Sense amplifier for low-voltage applications

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010073245A (ja) * 2008-09-17 2010-04-02 Toshiba Corp 不揮発性半導体記憶装置
US7924621B2 (en) 2008-09-17 2011-04-12 Kabushiki Kaisha Toshiba NAND-type flash memory and NAND-type flash memory controlling method
US8199582B2 (en) 2008-09-17 2012-06-12 Kabushiki Kaisha Toshiba NAND-type flash memory and NAND-type flash memory controlling method
JP2011008878A (ja) * 2009-06-26 2011-01-13 Samsung Electronics Co Ltd 不揮発性半導体メモリの放電回路
KR101332072B1 (ko) 2011-11-17 2014-01-22 서울시립대학교 산학협력단 전원장치에 사용되는 ic 회로
US8907719B2 (en) 2011-11-17 2014-12-09 Samsung Electro-Mechanics Co., Ltd. IC circuit
JP2016513852A (ja) * 2013-03-15 2016-05-16 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 高速・低電力センス増幅器
JP2018022541A (ja) * 2016-08-01 2018-02-08 三重富士通セミコンダクター株式会社 半導体記憶装置及びその制御方法
JP2023519182A (ja) * 2020-03-26 2023-05-10 マイクロン テクノロジー，インク． メモリシステムの信頼性のための電荷の漏れ検出
JP7438389B2 (ja) 2020-03-26 2024-02-26 マイクロン テクノロジー，インク． メモリシステムの信頼性のための電荷の漏れ検出

Also Published As

Publication number Publication date
US7636263B2 (en) 2009-12-22
US20080170445A1 (en) 2008-07-17
CN101226778A (zh) 2008-07-23

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